2017
DOI: 10.1038/s41467-017-00345-6
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Dirac point induced ultralow-threshold laser and giant optoelectronic quantum oscillations in graphene-based heterojunctions

Abstract: The occurrence of zero effective mass of electrons at the vicinity of the Dirac point is expected to create new paradigms for scientific research and technological applications, but the related discoveries are rather limited. Here, we demonstrate that a simple architecture composed of graphene quantum dots sandwiched by graphene layers can exhibit several intriguing features, including the Dirac point induced ultralow-threshold laser, giant peak-to-valley ratio (PVR) with ultra-narrow spectra of negative diffe… Show more

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Cited by 28 publications
(19 citation statements)
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References 56 publications
(65 reference statements)
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“…Graphene quantum dots (GQDs), composed of a single- or few-layered graphite cores connecting with peripheral functional groups, have attracted great attention and been extensively developed because of their distinctive electronic and optical characteristics and potential applications in optoelectronics. One of the most important characteristics of GQDs is their transformation from zero- to nonzero-bandgap semiconductors when the graphene size is reduced to nanometer scale, making them possible for one of the smallest optical gain materials for lasing. As compared to traditional semiconductor quantum dots (QDs), , other important properties such as good solubility in solvents, nontoxicity, and simple synthesis process have made GQDs a promising alternative for solution-processed laser sources with low fabrication cost yet high device performance.…”
mentioning
confidence: 99%
“…Graphene quantum dots (GQDs), composed of a single- or few-layered graphite cores connecting with peripheral functional groups, have attracted great attention and been extensively developed because of their distinctive electronic and optical characteristics and potential applications in optoelectronics. One of the most important characteristics of GQDs is their transformation from zero- to nonzero-bandgap semiconductors when the graphene size is reduced to nanometer scale, making them possible for one of the smallest optical gain materials for lasing. As compared to traditional semiconductor quantum dots (QDs), , other important properties such as good solubility in solvents, nontoxicity, and simple synthesis process have made GQDs a promising alternative for solution-processed laser sources with low fabrication cost yet high device performance.…”
mentioning
confidence: 99%
“…[38][39][40]63,67,68] As the emitted photon intensity is inversely proportional to the radiative recombination rate, the observed shortening of lifetime fits well with the underlying emission mechanism. [69,70] This fast decay component is absent at higher temperatures in the measured dynamics (see Figure 6B and Figure S13B (Supporting Information)) because lattice phonons destroy the coherence between excitons. Moreover, the spectrally overlap of the emission from different emissive channels remains unresolved by differential reflectivity measurement.…”
Section: Interlayer Coupling Induced Change Of Exciton Decay Dynamicsmentioning
confidence: 95%
“…Thus, h-SLG tend to show slightly stronger GERS signals compared with p-SLG (Figures 3b and 4b). [13,16,18,51,52]…”
Section: Gers-based Sensing Of Methylene Blue On P-slg and H-slgmentioning
confidence: 99%
“…At ≈0 V applied bias, the near resonance energy to the HOMO level of the MB cause efficient energy transfer resulting strong Raman signal. [13,16,18,51,52] The position of the Fermi energy of h-SLG at ≈0 V and the HOMO-LUMO energy of MB is schematically shown in Figure 6d. However, the overall Raman intensity starts reducing after 0 V. It continues in a reduced-intensity state during the reverse cycle, which is attributed to the continuous exposure of the sample to the laser, causing mild degradation.…”
Section: Ge-specs For Sensing Of Mb On P-slg and H-slgmentioning
confidence: 99%