2017
DOI: 10.1103/physrevb.96.115203
|View full text |Cite
|
Sign up to set email alerts
|

Dirac semimetal phase in hexagonal LiZnBi

Abstract: Based on first-principles calculations, we find that LiZnBi, a metallic hexagonal ABC compound, can be driven into a Dirac semimetal with a pair of Dirac points by strain. The nontrivial topological nature of the strained LiZnBi is directly demonstrated by calculating its Z 2 index and the surface states, where the Fermi arcs are clearly observed. The low-energy states as well as topological properties are shown to be sensitive to the strain configurations. The finding of Dirac semimetal phase in LiZnBi may in… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
23
0
1

Year Published

2018
2018
2022
2022

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 36 publications
(24 citation statements)
references
References 51 publications
0
23
0
1
Order By: Relevance
“…In this sense, the Dirac points are similar to the known centrosymmetric Dirac materials Na 3 Bi [11], but should be distinguished from semimetals with essential fourfold degenerate Dirac points, mandated by crystal symmetry and located at high-symmetry points, such as BiO 2 [10]. Similar noncentrosymmetric Dirac semimetals, arising due to band inversion, have been proposed in YbAuSb [25] and LiZnBi [26] with LiGaGe-type structure.…”
mentioning
confidence: 71%
“…In this sense, the Dirac points are similar to the known centrosymmetric Dirac materials Na 3 Bi [11], but should be distinguished from semimetals with essential fourfold degenerate Dirac points, mandated by crystal symmetry and located at high-symmetry points, such as BiO 2 [10]. Similar noncentrosymmetric Dirac semimetals, arising due to band inversion, have been proposed in YbAuSb [25] and LiZnBi [26] with LiGaGe-type structure.…”
mentioning
confidence: 71%
“…2 with PCM has been done to further confirm the presence of quantum confinement effect and quantitative estimation of size of SiNWs in samples n À and p À . [17,19,[46][47][48][49] The fitting of Raman lines has been done by a general Raman-Fano line-shape given by Eqn (3) below: [44] I…”
Section: Resultsmentioning
confidence: 99%
“…This signifies that the photons can be efficiently trapped either at the interface of PdSe 2 /pyramid Si or inside the Si, which could be eventually absorbed to generate carriers. The unique optical phenomenon is usually termed as light trapping effect [25] or resonant absorption, [26,27] which is highly beneficial for light detection. Please note that as the wavelength increases to 1300 nm (Figure 2d-f), a strong electric field could also be observed inside the pyramid Si.…”
Section: Introductionmentioning
confidence: 99%