1978 8th European Microwave Conference 1978
DOI: 10.1109/euma.1978.332620
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Direct and Accurate Measurements of Mixer Equivalent Noise Temperatures

Abstract: A new measuring technique has been developed, which enables the effective noise temperature Teff and intrinsic conversion loss Li of a lossy 2-port network to be determined directly. This technique when applied to a mixer, yields results which are in agreement with theoretical predictions (0.5 5Teff5 To; To ambient temperature) and may be measured with greater accuracy than has previously been possible using other methods. Practical results will be presented together with theoretical predictions based on a new… Show more

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Cited by 1 publication
(3 citation statements)
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“…Since the noise temperature can be measured with high precision, it is a sensitive indicator for the noise behaviour of the device. Although the experimental results are similar to those in [4], the results reported here have been obtained for mismatched devices without tuning. Furthermore, the input noise temperatures of low noise bipolar transistor preamplifiers have been measured for a number of samples in the frequency range of 20-40 MHz.…”
Section: The Noise Temperature In Semiconductor Devicessupporting
confidence: 55%
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“…Since the noise temperature can be measured with high precision, it is a sensitive indicator for the noise behaviour of the device. Although the experimental results are similar to those in [4], the results reported here have been obtained for mismatched devices without tuning. Furthermore, the input noise temperatures of low noise bipolar transistor preamplifiers have been measured for a number of samples in the frequency range of 20-40 MHz.…”
Section: The Noise Temperature In Semiconductor Devicessupporting
confidence: 55%
“…In practical devices, however, the series resistance has to be taken into account. The noise temperature TD of a real diode can be derived to be [8] TT RS + TB RB TD0 (4) RS + RB with RB as the dynamic resistance of the Schottky barrier as a function of the diode current ID n UT RB ---T -_ …”
Section: The Noise Temperature In Semiconductor Devicesmentioning
confidence: 99%
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