Direct and inverse Staebler–Wronski effects observed in carbon-doped hydrogenated amorphous silicon photo-detectors

Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C.; Brochero, J.; Calderón, A.; Fernández, M.; Gómez, G.; González-Sánchez, Francisco; Martínez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Árbol, P.; Scodellaro, L.; Sobrón, M.; Vila, I.; Virto, A. Lopez; Fernández, Jesús Alberto López

doi:10.1016/j.nima.2010.12.201

Cited by 2 publications

(2 citation statements)

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“…It is believed that the performance assessment of a-Si-based absorbers for photovoltaic application passes inevitably through evaluating its reliability and stability against the degradation induced by illumination effects [21][22][23][24]. In this context, Fig.…”

Section: Optical Propertiesmentioning

confidence: 99%

“…Among these challenges, the a-Si:H material is considered more defective than c-Si because of the high density of defects, thus significantly deteriorating the solar cell performance. In addition, this technology suffers from the degradation-related to Staebler-Wronski effects (SWEs), affecting the solar cell stability [21][22][23][24]. Besides, the elaboration of this kind of thin-film inorganic solar cells necessitates the use of SiH4 toxic material.…”

Section: Introductionmentioning

confidence: 99%

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Absorption enhancement in amorphous Si by introducing RF sputtered Ti intermediate layers for photovoltaic applications

Ferhati

Djeffal

Boubiche

et al. 2021

Materials Science and Engineering: B

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In this paper, embedded Amorphous-Silicon (a-Si) and Titanium (Ti) ultrathin-films forming a multilayer structure is proposed as a new efficient absorber material for thin-film solar cells (TFSCs). Promising design strategy based on combining FDTD (Finite Difference Time Domain) with Particle Swarm Optimization (PSO) was adopted to identify the a-Si/Ti multilayer geometry offering the highest Total Absorbance Efficiency (TAE). It is found that the optimized design can serve as an effective absorber, yielding superb TAE exceeding 80%.The optimized a-Si/Ti multilayer was then elaborated by successive growth of a-Si and Ti ultrathin layers using RF magnetron sputtering technique. The sputtered a-Si/Ti thin-film was characterized by Scanning Electron Microscopy (SEM), X-ray diffraction (XRD), and UV-Visible absorption spectroscopy. Measurements showed a unique optical behavior, promoting broadband absorbance over the visible and even NIR spectrum ranges. In particular, the prepared a-Si/Ti absorber exhibits an optical band-gap of 1.36 eV, which is suitable for photovoltaic applications. A performance assessment of the elaborated absorber was investigated by extracting I-V characteristics and electrical parameters under dark and 1-sun illumination. It is revealed that the proposed absorber demonstrates outstanding electrical and sensing performances. Therefore, promoting enhanced resistive behavior and light-scattering effects, this innovative concept of optimized a-Si/Ti multilayer provides a sound pathway for designing promising alternative absorbers for the future development of a-Si-based TFSCs.

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Section: Optical Propertiesmentioning

confidence: 99%