Direct and Rb-promoted<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">SiO</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>/β-SiC(100) interface formation

Riehl-Chudoba, M.; Soukiassian, P.; Jaussaud, C.; Dupont, Samuel

doi:10.1103/physrevb.51.14300

Cited by 28 publications

(23 citation statements)

References 71 publications

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“…As already shown elsewhere, a contaminant free and stoichiometric SiC surface could be obtained by thermal annealing treatments only at a temperature below 1100°C, without ion sputtering. 7 Additional thermal annealings result in Si surface depletion leaving carbon-rich ␤-SiC͑100͒ surfaces which exhibit the characteristic low energy electron diffraction ͑LEED͒ pattern c͑2ϫ2͒ as shown in Fig. 1, in very good agreement with previous work.…”

Section: Methodssupporting

confidence: 87%

“…This behavior is likely resulting from CO and/or CO 2 formation and desorption into the vacuum as previously reported for alkali metal ͑Rb͒ room temperature promoted oxidation of the ␤-SiC͑100͒ surface. 6,7 Finally, we turn to the Na 2p core levels presented in Fig. 5 for the same sequence as in Figs.…”

Section: B Na/␤-sic(100)mentioning

confidence: 97%

“…There are only few studies about surface passivation by native SiO 2 oxide growth using direct [3][4][5] or promoted oxidation. 6,7 In contrast, the formation of metal/silicon carbide interfaces has been investigated for several systems with various metal adsorbates having very different properties and including transition metals, [8][9][10][11][12] aluminum, 13,14 full or almost full d-band metals. [15][16][17][18] However, in most of these studies, rather thick metal films were used in order to explore the thermal stability of metallic contacts.…”

Section: Introductionmentioning

confidence: 99%

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Na/carbon-rich β-SiC(100) surface: Initial interface formation and metallization

Sèmond¹

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We investigate the room temperature interface formation of the Na/carbon-rich β-SiC(100) surface by core level and valence band photoemission spectroscopy using synchrotron radiation. The deposition of a Na layer at saturation coverage results in surface metallization as evident from the presence of plasmon loss features at core levels, and from a Fermi edge building-up in the valence band. Furthermore, large chemical shifts at both C 1s and Si 2p core level indicate reactive interface formation and surface disruption with significant adsorbate–substrate charge transfer. The Na–Si bond establishment leads to subsequent breaking of the C–Si bonds leaving additional C atoms on the surface as carbon/graphite clusters. Exposure of the Na/β-SiC(100) interface to a small amount of oxygen results in the removal of surface metallization.

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Section: Methodssupporting

confidence: 87%

Section: B Na/␤-sic(100)mentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

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Na/carbon-rich β-SiC(100) surface: Initial interface formation and metallization

Sèmond¹

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…In an attempt to enhance the oxidation rate of SiC, a couple of techniques were already investigated. Chudoba et al 9 studied the oxidation of ␤-SiC ͑100͒ surfaces modified by deposition of a Rb monolayer. The oxygen uptake was enhanced by four orders of magnitude in comparison with clean ␤-SiC ͑100͒ surfaces.…”

Section: Introductionmentioning

confidence: 99%

Effects of ion irradiation in the thermal oxidation of SiC

2002

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We investigated the thermal growth of SiO 2 films on 6H-SiC ͑0001͒ samples irradiated with 170 keV Ar ϩ ions. Electronic, compositional, and structural features arisen from the irradiation process were accessed. All results are compared to those of nonirradiated substrates, revealing major differences due to ion bombardment such as the enhanced rate of oxidation, the variation of roughness of both oxide surface and SiO 2 /SiC interface, and of the stress in the formed oxide layer. Modifications on the electronic structure and crystallographic characteristics of the substrate underneath the oxide were also observed in samples in which the ion irradiation damaged layer was only partially consumed by the oxidation step. The present work evidences that a careful choice of sample preparation conditions is necessary to avoid undesired characteristics in the final SiO 2 /SiC structure and points to a way of preventing irradiation related degradation of electrical characteristics while maintaining the high oxidation rate.

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“…14 -16 In this article, we investigate the role of surface reconstruction on the ␤-SiC͑100͒ oxidation using high-resolution core level photoemission spectroscopy with a third generation synchrotron radiation source ͑ALS, Berkeley͒. This third a͒ Also at: Department of Physics, Northern Illinois University, DeKalb, IL 60115. b͒ Electronic mail: dunhamdj@uwec.edu generation source allows much higher energy resolution, especially when compared to previous work performed with x-ray sources, [12][13][14]17 allowing identification of oxidation states. The Si-rich 3ϫ2 surface reconstruction exhibits Si-Si dimer rows, with all the dimers tilted in the same direction as evidenced by atom resolved scanning tunneling microscopy 18 and grazing incidence x-ray diffraction 19 and theory.…”

Section: Introductionmentioning

confidence: 95%

High resolution synchrotron radiation-based x-ray photoemission spectroscopy study of the Si-rich β-SiC(100) 3×2 surface oxidation

Dunham

Mehlberg

Chamberlin

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We investigate the initial oxidation and interface formation of cubic silicon carbide for the silicon rich β-SiC(100) 3×2 surface reconstruction by high resolution synchrotron radiation-based soft x-ray photoemission spectroscopy. The surface is exposed to low doses of molecular oxygen ranging from 1 up to 10 000 L, at surface temperatures from 25 to 500 °C. Significant formation of SiO2 is found for the surface at room temperature, with the rate of oxidation increasing with temperature. Valence band data and Si 2p core level spectra show that even at low exposures, significant oxidation is taking place, with a surface reactivity to oxygen much larger than for silicon surfaces. The oxidation products, which are grown at very low temperatures (⩽500 °C) include SiO2 as a dominant feature but also substoichiometric oxides Si+1, Si+2, Si+3, and significant amounts of mixed oxide products involving C atoms (Si–O–C).

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Direct and Rb-promotedSiOx/β-SiC(100) interface formation

Cited by 28 publications

References 71 publications

Na/carbon-rich β-SiC(100) surface: Initial interface formation and metallization

Na/carbon-rich β-SiC(100) surface: Initial interface formation and metallization

Effects of ion irradiation in the thermal oxidation of SiC

High resolution synchrotron radiation-based x-ray photoemission spectroscopy study of the Si-rich β-SiC(100) 3×2 surface oxidation

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