Direct Application of Carbon Nanotubes (CNTs) Grown by Chemical Vapor Deposition (CVD) for Integrated Circuits (ICs) Interconnection: Challenges and Developments

Abstract

With the continuous shrinkage of integrated circuit (IC) dimensions, traditional copper interconnect technology is gradually unable to meet the requirements for performance improvement. Carbon nanotubes have gained widespread attention and research as a potential alternative to copper, due to their excellent electrical and mechanical properties. Among various methods for producing carbon nanotubes, chemical vapor deposition (CVD) has the advantages of mild reaction conditions, low cost, and simple reaction operations, making it the most promising approach to achieve compatibility with integrated circuit manufacturing processes. Combined with through silicon via (TSV), direct application of CVD-grown carbon nanotubes in IC interconnects can be achieved. In this article, based on the above background, we focus on discussing some of the main challenges and developments in the application of CVD-grown carbon nanotubes in IC interconnects, including low-temperature CVD, metallicity enrichment, and contact resistance.

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“…As the shrinking effect, and therefore the compressive strain, increased, the CNT carrier density increased, while the mobility decreased. Moreover, under compressive strain, semiconducting CNTs transition from a semiconducting to a metallic state with a reduced bandgap . Our findings can be therefore attributed to the studied CNTs being 2/3 semiconducting.…”

“…Moreover, under compressive strain, semiconducting CNTs transition from a semiconducting to a metallic state with a reduced bandgap. 22 Our findings can be therefore attributed to the studied CNTs being 2/3 semiconducting. Moreover, owing to compressive strain, the percolation path in the CNTs network may vary, which can contribute to the observed results.…”