Direct Band Gap AlGaAs Wurtzite Nanowires

Barettin, Daniele; Shtrom, I. V.; Reznik, R. R.; Микушев, С. В.; Cirlin, G. É.; Maur, Matthias Auf der; Akopian, N.

doi:10.1021/acs.nanolett.2c04184

Cited by 7 publications

(8 citation statements)

References 66 publications

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“…In our work (Ref. [24]), we adopted the piezoelectric coefficients for GaAs from Ref. [56], which were further validated by recent experimental investigations [57].…”

Section: Structure and Modelsmentioning

confidence: 96%

“…[58], and they are an order of magnitude lower. For a comprehensive discussion and the selection of the electromechanical parameters we adopted, we refer to our recent article [24].…”

Section: Structure and Modelsmentioning

confidence: 99%

“…In that publication, we presented a preliminary model with an initial set of numerical parameters. Recently, we have further tested and refined the model by incorporating additional parameters and validating them against experimental data from an AlGaAs nanowire [24]. In this current work, for the first time, we apply this refined model to investigate a GaAs/AlGaAs quantum dot in a wurtzite structure.…”

Section: Introductionmentioning

confidence: 99%

“…A very relevant study reported the growth of wurtzite AlGaAs nanowires with a wide range of Al content presenting a comparative optical and structural analysis, showing the behavior of the band gap of Wz Al x Ga 1−x As, a novelty in the literature [32]. Building upon the experimental findings of the aforementioned study, we have developed a comprehensive model given by an eight-band k • p model, which incorporates strain and piezoelectric fields, in order to establish the the optoelectronic properties of Wz AlGaAs nanowires with varying Al content [24]. Additionally via our simulations we have calculated in the same paper the band gap of Wz AlAs and the valence band offset between GaAs and AlAs in Wz symmetry by fitting the model to our measurements.…”

Section: Introductionmentioning

confidence: 99%

“…However, in our current work, we have opted to use the well-established 8-band k • p model from Ref. [24]. We made this choice based on the model's ability to provide an excellent description of our experimental results.…”

Section: Introductionmentioning

confidence: 99%

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Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire

et al. 2023

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We present a study with a numerical model based on k→·p→, including electromechanical fields, to evaluate the electromechanical and optoelectronic properties of single GaAs quantum dots embedded in direct band gap AlGaAs nanowires. The geometry and the dimensions of the quantum dots, in particular the thickness, are obtained from experimental data measured by our group. We also present a comparison between the experimental and numerically calculated spectra to support the validity of our model.

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“…In our work (Ref. [24]), we adopted the piezoelectric coefficients for GaAs from Ref. [56], which were further validated by recent experimental investigations [57].…”

Section: Structure and Modelsmentioning

confidence: 96%

“…[58], and they are an order of magnitude lower. For a comprehensive discussion and the selection of the electromechanical parameters we adopted, we refer to our recent article [24].…”

Section: Structure and Modelsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire

et al. 2023

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Quantum dots synthesis within ternary III–V nanowire towards light emitters in quantum photonic circuits: a review

Boras,

Zeng,

Park

et al. 2024

Nanotechnology

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The positioning of quantum dots (QDs) in nanowires (NWs) on-axis has emerged as a controllable method of QD fabrication that has given rise to structures with exciting potential in novel applications in the field of Si photonics. In particular, III-V NWQDs attract a great deal of interest owing to their vibrant optical properties, high carrier mobility, facilitation in integration with Si and bandgap tunability, which render them highly versatile. Moreover, unlike Stranski-Krastanov or self-assembled QDs, this configuration allows for deterministic position and size of the dots, enhancing the sample uniformity and enabling beneficial functions. Among these functions, single photon emission has presented significant interest due to its key role in quantum information processing. This has led to efforts for the integration of ternary III-V NWQD non-classical light emitters on-chip, which is promising for the commercial expansion of quantum photonic circuits. In the current review, we will describe the recent progress in the synthesis of ternary III-V NWQDs, including the growth methods and the material platforms in the available literature. Furthermore, we will present the results related to single photon emission and the integration of III-V NWQDs as single photon sources in quantum photonic circuits, highlighting their promising potential in quantum information processing. Our work demonstrates the up-to-date landscape in this field of research and pronounces the importance of ternary III-V NWQDs in quantum information and optoelectronic applications.

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Exploring Al composition and diameter effect on Al_xGa_1-xAs nanowire photocathodes via first-principles calculations with DFT+U method

Diao,

Xia

2024

Phys. Scr.

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Utilizing first-principles calculations with DFT+U method, the structural, electronic and optical behaviors of AlxGa1-xAs nanowire photocathodes modulated by Al composition and diameter are systematically investigated. The findings reveal that the structural stability of AlxGa1-xAs nanowires is progressively enhanced as either the Al composition or the wire diameter increases. Additionally, the charge transfer in nanowires induced by altering the Al composition is significantly greater than that caused by varying wire diameter. Wurtzite AlxGa1-xAs nanowire is a direct bandgap material. Moreover, the continuously reduced bandgap resulting from an increase in diameter confirms the size effect of the nanowire. In addition, the introduction of DFT+U method presents an accurate theoretical bandgap with higher efficiency. The error of the bandgap between predication and experimental results is less than 4% in the case of bulk AlxGa1-xAs. The optical property of AlxGa1-xAs nanowire is more susceptible to the influence of wire diameter compared to that of Al composition. Furthermore, the optical absorption spectrums exhibit a slight blueshift and a redshift with increasing Al composition and wire diameter, respectively. This study is anticipated to provide theoretical support for the design of optoelectronic devices based on AlxGa1-xAs nanowires.

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Direct Band Gap AlGaAs Wurtzite Nanowires

Cited by 7 publications

References 66 publications

Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire

Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire

Quantum dots synthesis within ternary III–V nanowire towards light emitters in quantum photonic circuits: a review

Exploring Al composition and diameter effect on Al_xGa_1-xAs nanowire photocathodes via first-principles calculations with DFT+U method

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Direct Band Gap AlGaAs Wurtzite Nanowires

Cited by 7 publications

References 66 publications

Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire

Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire

Quantum dots synthesis within ternary III–V nanowire towards light emitters in quantum photonic circuits: a review

Exploring Al composition and diameter effect on AlxGa1-xAs nanowire photocathodes via first-principles calculations with DFT+U method

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Product

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About

Exploring Al composition and diameter effect on Al_xGa_1-xAs nanowire photocathodes via first-principles calculations with DFT+U method