Direct comparison of two Cryocooled Sapphire Oscillators presenting relative frequency instability at 10&lt;sup&gt;&amp;#x2212;15&lt;/sup&gt;

Grop, S.; Dubois, Benoît; Masson, J.; Bourgeois, P.Y.; Kersalé, Y.; Rubiola, Enrico; Haye, Grégory; Giordano, V.

doi:10.1109/eftf.2012.6502380

Cited by 1 publication

(1 citation statement)

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“…The best near carrier phase noise is achieved with a room temperature sapphire resonator oscillator incorporating a sophisticated electronic degenerating the noise of the sustaining oscillator stage [1]. On the other hand, the Cryogenic Sapphire Oscillator (CSO) in which the sapphire resonator is cooled near 6 K, provides a fractional frequency stability better than 1 × 10 −15 for integration times lower than 10,000 s [2,3]. The recent demonstration of a low maintenance CSO based on a pulse-tube cryocooler paves the way for its deployment in real field applications [4].…”

Section: Introductionmentioning

confidence: 99%

Tests of Sapphire Crystals Manufactured With Different Growth Processes for Ultra-Stable Microwave Oscillators

Giordano

Fluhr

Grop

et al. 2016

IEEE Trans. Microwave Theory Techn.

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We present the characterization of 8 − 12 GHz whispering gallery mode resonators machined in high-quality sapphire crystals elaborated with different growth techniques. These microwave resonators are inttended to constitute the reference frequency of ultra-stable Cryogenic Sapphire Oscillators. We conducted systematic tests near 4K on these crystals to determine the unloaded Qfactor and the turnover temperature for whispering gallery modes in the 8-12 GHz frequency range. These characterizations show that high quality sapphire crystals elaborated with the Heat Exchange or the Kyropoulos growth technique are both suitable to meet a fractional frequency stability better than 1 × 10 −15 for 1 s to 10.000 s integration times.

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