Direct correlation between 1/f and other noise sources

Jones, Brian K.; Francis, Jack

doi:10.1088/0022-3727/8/10/003

Cited by 25 publications

(8 citation statements)

References 2 publications

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“…This relation in the range of charge carrier density between 5·10 17 to 2·10 18 cm -3 approximately gives the proportionality µ 2~1 /n and α~µ 2 . In other charge carrier density ranges the experimental parameter α values are very scattered [5,6] considering that the spectral density of noise is proportional to 1/N 2 .…”

Section: 〈(δN)mentioning

confidence: 74%

“…In Ref. [1], it was stated that the 1/f noise and the 1/Δf [1][2][3] noise have the same physical origin: they are caused by resistance fluctuations. The correlation between 1/f noise and 1/Δf noise measurements show the complete correlation giving the direct confirmation that such noises are due to resistance fluctuations [2,3].…”

Section: Introductionmentioning

confidence: 99%

“…[1], it was stated that the 1/f noise and the 1/Δf [1][2][3] noise have the same physical origin: they are caused by resistance fluctuations. The correlation between 1/f noise and 1/Δf noise measurements show the complete correlation giving the direct confirmation that such noises are due to resistance fluctuations [2,3]. It was directly shown by the measurement of thermal noise modulation that the 1/f noise in homogeneous materials is due to its resistance R fluctuations ΔR(t) at equilibrium conditions [4].…”

Section: Introductionmentioning

confidence: 99%

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The charge carrier capture–emission process – the main source of the low-frequency noise in homogeneous semiconductors

Palenskis¹

2017

Lith. J. Phys.

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The possibility of determination of the number of localized capture centers of defects (relaxators) that cause low-frequency noise in a particular frequency range has been investigated. Here it is shown that a minimum number of relaxators is needed to generate 1/f type low-frequency noise only when relaxation times are arbitrarily distributed one-by-one in every two-octave range. The expression for estimation of the low-frequency noise level of the sample under test is presented. The presented expression for 1/f noise explains not only the noise level dependence both on the frequency and number of defects in the sample but also the observed noise intensity dependence on the mobility of free charge carriers. It is shown that the main source that causes low-frequency noise in homogeneous semiconductors is the charge carrier capture-emission process.

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Section: 〈(δN)mentioning

confidence: 74%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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The charge carrier capture–emission process – the main source of the low-frequency noise in homogeneous semiconductors

Palenskis¹

2017

Lith. J. Phys.

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“…More importantly, the noise components at angular frequencies Ω n and ω p ± Ω n will be completely correlated. The behavior described above has been experimentally observed, for example, in carbon resistors [4, 17].…”

Section: A Brief Note About Conductance Fluctuationsmentioning

confidence: 81%

Experimental characterization of the cyclostationary low-frequency noise of microwave semiconductor devices under large signal operation

Souza

Dupouy²,

Nallatamby³

et al. 2010

Int. j. microw. wirel. technol.

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International audiencehis paper presents a detailed experimental analysis of the cyclostationary properties of low-frequency (LF) noise sources of microwave bipolar devices, in order to improve the LF noise description in compact models. Such models are used to help designers on predicting circuit performances such as phase and amplitude noise in oscillators. We start by reviewing the most relevant experimental and simulation results on the subject, and then investigate the model of conductance fluctuations proposed to explain the 1/f noise of carbon resistors. This simple linear case serves as a basis for understanding the complex case of a non-linear device under large-signal periodic operation. We then present the large-signal small-signal analysis of a pumped junction, focusing on the process of converting the fundamental LF noise process, a current fluctuation, into voltage fluctuations. We show why a stationary noise model would lead to an increase of the voltage noise observed around DC when the device is pumped, while the voltage noise would decrease if a cyclostationary model was used. A great amount of experimental data is presented not only to support our analysis, but also as a mean to distinguish between the two noise processes under consideration: stationary or cyclostationary. The goal of our noise measurement technique was to maximize the difference between those two concepts. Throughout the paper, we revisit some known concepts and show how some experimental results may lead to misinterpretations

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“…In many cases the spectrum varies as l/f and the fluctuation is called llf noise. The source of this noise is not well established but in some electronic systems there is good evidence that the effect is a resistance fluctuation (Jones andFrancis 1975, Voss andClarke 1976).…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of low-frequency electrical noise in silicon resistors (in field effect devices)

Jones¹

1981

J. Phys. D: Appl. Phys.

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Direct correlation between 1/f and other noise sources

Cited by 25 publications

References 2 publications

The charge carrier capture–emission process – the main source of the low-frequency noise in homogeneous semiconductors

The charge carrier capture–emission process – the main source of the low-frequency noise in homogeneous semiconductors

Experimental characterization of the cyclostationary low-frequency noise of microwave semiconductor devices under large signal operation

Temperature dependence of low-frequency electrical noise in silicon resistors (in field effect devices)

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