Direct detection of the idler THz radiation generated by spontaneous parametric down-conversion

Китаева, Г. Х.; Kornienko, V. V.; Кузнецов, К. А.; Pentin, I. V.; Смирнов, К. В.; Vakhtomin, Yu. B.

doi:10.1364/ol.44.001198

Cited by 18 publications

(10 citation statements)

References 26 publications

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“…Table 2 summarizes the main parameters of the studied VN structures with a sensitive area of 0.4 μm × 0.4 μm, as well as the experimentally obtained value of the ultimate noise equivalent power which amounted to NEP @1MHz = 6.3 × 10 –14 W/√Hz and the minimum energy level is equal δE ≈ 8.1 × 10 –18 J. For comparison, the same table presents the main parameters of the most common NbN HEB detectors, where NEP value is NEP = 2.5 × 10 –13 W/√Hz 5 , which is 4 times higher than NEP of the VN HEB detectors. Note that the indicated value of NEP of the VN HEB detectors can be further reduced by creating detectors with a smaller sensitive area.…”

Section: Experimental Nep Of the Vn Detectormentioning

confidence: 95%

“…For example, the detection and study of the effect of electronic heating in superconducting NbN films, arising under the influence of radiation of different frequencies from the visible to the millimeter wave range, has led to the creation of a new class of cryogenic electronic devices 1 , 2 . One of these devices, of course, become superconducting NbN HEB (Hot-Electron Bolometer) detectors that exhibit high sensitivity (NEP ≈ 2 × 10 –13 W/√Hz) combined with record response time (τ ≈ 50 ps), as well as energy resolution δE ≈ 3 × 10 –18 J 3 – 5 . Such unique characteristics of NbN HEB detectors made possible by the use of ultra-thin (d ≈ 3–5 nm) disordered NbN films, which are characterized by a low diffusion coefficient (D ≈ 0.5 cм 2 /c), high critical temperature (T c ≈ 10 К), small width of the superconducting transition (∆T c < 0.2 К), the strong temperature dependence of the resistance in the region of the superconducting transition.…”

Section: Introductionmentioning

confidence: 99%

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Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation

Pentin

Vakhtomin

Seleznev

et al. 2020

Sci Rep

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The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d ≈ 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (ω ≈ 0.140 THz) and sources in the IR region (ω ≈ 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6–2.7) ns. The studied response of VN structures to IR (ω ≈ 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range ω ≈ (0.3–6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (δE) reached NEP@1MHz ≈ 6.3 × 10–14 W/√Hz and δE ≈ 8.1 × 10–18 J, respectively.

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Section: Experimental Nep Of the Vn Detectormentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation

Pentin

Vakhtomin

Seleznev

et al. 2020

Sci Rep

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“…Thus, we can generalize Equation ( 7) for any type of discrete distribution () PN by taking Equation ( 8) instead of Equation (5). The relationship between statistical distribu-Figure 3.…”

Section: Figurementioning

confidence: 99%

“…Thus, we can generalize Equation ( 7) for any type of discrete distribution P(N) by taking Equation ( 8) instead of Equation (5). The relationship between statistical distributions of the bolometer readings P(z) and of the number of input photons P(N) takes the form…”

Section: Figurementioning

confidence: 99%

“…Nowadays, a new direction in terahertz science begins, aimed to extend quantum optical technologies to the terahertz frequency range (THz) [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 ]. Currently developed for the optical range, the methods of quantum field sensing [ 12 , 13 , 14 ], imaging [ 15 , 16 ], spectroscopy [ 17 , 18 ], and calibration [ 19 , 20 ] potentially can have great prospects in THz.…”

Section: Introductionmentioning

confidence: 99%

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Towards Measuring Terahertz Photon Statistics by a Superconducting Bolometer

Prudkovskii

Leontyev

Кузнецов

et al. 2021

Sensors

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Statistical distributions of the analog readings of an antenna-coupled THz superconducting bolometer were measured and analyzed under a special type of irradiation by low-energy fluxes of THz photons with Poisson photon statistics and controllable mean photon numbers. The photons were generated via low-gain parametric down-conversion in pulse-pumped Mg:LiNbO3 crystal placed to a cooled cryostat together with the bolometer NbN film. Results of theoretical approximation of experimental histograms reveal the discrete nature of THz detection by superconducting bolometers and open a way for studying their quantum characteristics. It is shown that bolometer readings per pulse consist of discrete counts (“single charges”), with the mean number linearly dependent on the number of input photons. Contributions of single counts to a total analog reading are statistically distributed according to the normal law, with average values slightly depending on the number of counts in each reading. A general formula is proposed to describe the relationship between continuous statistical distribution of the bolometer readings and discrete quantum statistics of the incident photons.

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Azimuthal eigenmodes at strongly non-degenerate parametric down-conversion

Dvernik

Prudkovskii

2021

Appl. Phys. B

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Quantum-optical technologies based on the effect of parametric light downconversion are not yet applied in the terahertz frequency range. This is owing to the absence of terahertz single-photon detectors and the strong entanglement of modes of optical-terahertz biphotons. This study investigates the angular structure of scattered radiation generated by strongly non-degenerate parametric down-conversion. It demonstrates that under certain approximations, it is possible to obtain azimuthal eigenmodes for the nonlinear-interaction operator. The solution of the evolution equations for the field operators in these eigenmodes has the form of the Bogolyubov transformation, which allows a scattering matrix to be obtained for arbitrary values of the parametric gain. This scattering matrix can describe both the production of biphoton pairs and the generation of intense fluxes of correlated optical-terahertz fields that form a macroscopic quantum state of radiation in two spectral ranges.

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Direct detection of the idler THz radiation generated by spontaneous parametric down-conversion

Cited by 18 publications

References 26 publications

Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation

Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation

Towards Measuring Terahertz Photon Statistics by a Superconducting Bolometer

Azimuthal eigenmodes at strongly non-degenerate parametric down-conversion

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