Direct Determination of Field Emission across the Heterojunctions in a ZnO/Graphene Thin-Film Barristor

Mills, Edmund M.; Min, Bok Ki; Kim, Seong K.; Kim, Seong Jun; Kang, Min‐A; Song, Wooseok; Myung, Sung; An, Ki‐Seok; Jung, Jongwan; Kim, Sangtae

doi:10.1021/acsami.5b03380

Cited by 14 publications

(14 citation statements)

References 23 publications

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“…Microelectronic devices employing thermionic emission over the Schottky barrier between graphene and silicon or another bulk semiconductor 1,2,[27][28][29][30][31][32] have experienced a boom over the last few years, see Refs. [33][34][35] for the most recent reviews.…”

Section: Introductionmentioning

confidence: 99%

Theory of thermionic emission from a two-dimensional conductor and its application to a graphene-semiconductor Schottky junction

Trushin

2018

Applied Physics Letters

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The standard theory of thermionic emission developed for three-dimensional semiconductors does not apply to two-dimensional materials even for making qualitative predictions because of the vanishing out-of-plane quasiparticle velocity. This study reveals the fundamental origin of the out-of-plane charge carrier motion in a two-dimensional conductor due to the finite quasiparticle lifetime and huge uncertainty of the out-of-plane momentum. The theory is applied to a Schottky junction between graphene and a bulk semiconductor to derive a thermionic constant, which, in contrast to the conventional Richardson constant, is determined by the Schottky barrier height and Fermi level in graphene.

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Section: Introductionmentioning

confidence: 99%

Theory of thermionic emission from a two-dimensional conductor and its application to a graphene-semiconductor Schottky junction

Trushin

2018

Applied Physics Letters

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“…Therefore, in recent years different aspects of G/ZnO interface such as Ohmic or Schottky behavior has been extensively investigated. The Schottky barrier at the interface is used in various devices such as optical detectors, 23,24 LEDs, 25,26 solar cells, 4,27 chemical sensors, 28,29,32 transistors 30 and barristors. 31,32 Specially, in the barristor the current can be controlled in a zero band gap graphene with the Schottky barrier, while utilizing the high mobility of charge carriers in graphene.…”

Section: Introductionmentioning

confidence: 99%

“…The Schottky barrier at the interface is used in various devices such as optical detectors, 23,24 LEDs, 25,26 solar cells, 4,27 chemical sensors, 28,29,32 transistors 30 and barristors. 31,32 Specially, in the barristor the current can be controlled in a zero band gap graphene with the Schottky barrier, while utilizing the high mobility of charge carriers in graphene. 30,31 Atomistic details at G/ZnO interface such as stacking order, dislocations or vacancies and interfacial bonding have been shown to play important roles in the electrical and optical properties of the interface.…”

Section: Introductionmentioning

confidence: 99%

“…Several experimental works reported different values for the barrier height ranging from Ohmic to Schottky behaviour. 25,28,32,[35][36][37][38] This discrepancies has been related to the surface polarity 33 or the oxygen pressure during the deposition of ZnO layer. 36,37 We have compared the Schottky barrier for ZnO surfaces with different oxygen density at the interface.…”

Section: Introductionmentioning

confidence: 99%

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Electronic Properties of Graphene-ZnO Interface: A Density Functional Theory Investigation

Fathzadeh¹,

Fahrvandi²,

Nadimi³

2019

Preprint

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Our study provides significant new results for an important interface in current and future nanoelectronics, namely the Graphene-ZnO interface. The manuscript includes the results of intensive density functional calculations for the interface between several ZnO surfaces and a single layer graphene. The structural properties and the binding energies at the interface are calculated for three different ZnO surfaces. The Zn-terminated (0001) and O-terminated (000-1) surfaces as well as nonpolar (10-10) surface are considered in the present study. We also investigate the electronic properties of the contact by calculating the interfacial potential barrier based on projected density of states at different layers. The results indicate the crucial role of interfacial oxygen density on the electronic behavior of the contact, which in turn can be employed to explain experimental discrepancies on the Ohmic or Schottky behavior of this interface. Calculations for interfaces with oxygen vacancies support our finding and explain experimental results for thermally treated samples.

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“…Theoretically, density functional theory shows that the electronic structure of ZnO/graphene is significantly modified by applied electric fields, indicative of an enhancement of the field-emission properties22. Electrons have also been experimentally proven to be able to pass through the Schottky barriers formed at the ZnO/graphene heterojunction via a field-emission process23. Furthermore, the graphene sheets in field-emission prototype devices can act as a buffer layer between the ZnO and the bottom electrode.…”

mentioning

confidence: 99%

Unique visible-light-assisted field emission of tetrapod-shaped ZnO/reduced graphene-oxide core/coating nanocomposites

Kim

Guo

et al. 2016

Sci Rep

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The electronic and the optoelectronic properties of graphene-based nanocomposites are controllable, making them promising for applications in diverse electronic devices. In this work, tetrapod-shaped zinc oxide (T-ZnO)/reduced graphene oxide (rGO) core/coating nanocomposites were synthesized by using a hydrothermal-assisted self-assemble method, and their optical, photoelectric, and field-emission properties were investigated. The ZnO, an ideal ultraviolet-light-sensitive semiconductor, was observed to have high sensitivity to visible light due to the rGO coating, and the mechanism of that sensitivity was investigated. We demonstrated for the first time that the field-emission properties of the T-ZnO/rGO core/coating nanocomposites could be dramatically enhanced under visible light by decreasing the turn-on field from 1.54 to 1.41 V/μm and by increasing the current density from 5 to 12 mA/cm2 at an electric field of 3.5 V/μm. The visible-light excitation induces an electron jump from oxygen vacancies on the surface of ZnO to the rGO layer, resulting in a decrease in the work function of the rGO and an increase in the emission current. Furthermore, a field-emission light-emitting diode with a self-enhanced effect was fabricated making full use of the photo-assisted field-emission process.

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Direct Determination of Field Emission across the Heterojunctions in a ZnO/Graphene Thin-Film Barristor

Cited by 14 publications

References 23 publications

Theory of thermionic emission from a two-dimensional conductor and its application to a graphene-semiconductor Schottky junction

Theory of thermionic emission from a two-dimensional conductor and its application to a graphene-semiconductor Schottky junction

Electronic Properties of Graphene-ZnO Interface: A Density Functional Theory Investigation

Unique visible-light-assisted field emission of tetrapod-shaped ZnO/reduced graphene-oxide core/coating nanocomposites

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