1971
DOI: 10.1063/1.1653501
|View full text |Cite
|
Sign up to set email alerts
|

Direct Determination of Optical Gain in Semiconductor Crystals

Abstract: We report a new technique for measuring the stimulated emission spectrum and optical gain of semiconductor materials. Amplified spontaneous emission is used to determine the gain factor by relating the measured variation in light output to variation in the length of the excitation beam. Results for CdS crystals at 2°K are presented that indicate net gains as high as 160 cm−1 at λ = 4907 Å are possible with ∼ 12-MW/cm2 optical pump power density from a nitrogen laser.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

6
236
0
6

Year Published

1999
1999
2015
2015

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 446 publications
(248 citation statements)
references
References 5 publications
6
236
0
6
Order By: Relevance
“…If the modal gain exceeds the total losses, the spontaneous emission is amplified along the waveguide. To measure the net gain, including propagation losses due to non-resonant residual absorption as well as disorder-induced scattering, we use a standard method originally introduced in the seminal work of Shaklee et al 33 The output intensity may be written as…”
Section: Resultsmentioning
confidence: 99%
“…If the modal gain exceeds the total losses, the spontaneous emission is amplified along the waveguide. To measure the net gain, including propagation losses due to non-resonant residual absorption as well as disorder-induced scattering, we use a standard method originally introduced in the seminal work of Shaklee et al 33 The output intensity may be written as…”
Section: Resultsmentioning
confidence: 99%
“…However, for the optical gain measurements, the ASE was detected from the in-plane direction and the gain coefficients of the ASE were obtained by using the VSL excitation method. 15,16 In the measurements, the stripe length of a rectangular excitation beam focused through cylindrical lenses and an aperture was varied from 0 to 0.15 mm, and the emitted light passing through the stripe region was detected. Figure 1 shows PL spectra of the BP1T crystal under the weak excitation by a He-Cd laser as a function of temperature.…”
Section: Methodsmentioning
confidence: 99%
“…A relatively straightforward technique to determine the steady-state gain spectrum for an optically active medium is the variable stripe length method, originally introduced in Ref. 5. Here, the emission from a homogeneously illuminated stripe of varying length is collected out of a cleaved edge as a function of the stripe length.…”
mentioning
confidence: 99%