Direct Electron‐Beam Writing of Highly Conductive Wires in Functionalized Fullerene Films

Abstract

This work demonstrates the patterning of thin films (approximately 25 nm) of a newly synthesized fullerene derivative by direct-write electron-beam lithography to produce highly conducting carbon microstructures. Scanning electron microscopy and atomic force microscopy are used to characterize the resulting microstructure morphology, whilst the resistivities of the structures are probed using four-point probe electrodes deposited on the microstructures by lift-off. The microstructures have a resistivity of approximately 9.5 x 10(-3) Omega cm after exposure to an electron dose of 0.1 C cm(-2). The method may have applications in the generation and electrical contacting of organic electronics, organic photovoltaics, and lab-on-a-chip devices.

Sub-10-nm half-pitch electron-beam lithography by using poly(methyl methacrylate) as a negative resist

“…The contrast value is not high relative to high-resolution development processes for positive-tone PMMA ͑such as low temperature development 6 ͒ and HSQ ͑such as salty development 12 and high temperature and high concentration TMAH development 10 ͒. The sensitivity of negative-tone PMMA is about 30 times lower than positive-tone PMMA and is similar to other high-resolution negative resists such as calixarene, 7 fullerene-based film, 31 and ZnO. 32 However, the sensitivity of PMMA can be dramatically improved by adopting lower-voltage exposure ͑see Sec.…”

In SituPatterning of High-Quality Crystalline Rubrene Thin Films for High-Resolution Patterned Organic Field-Effect Transistors

“…Semiconducting oligomer patterns can be prepared by vacuum deposition using a shadow mask, but this method has a limited spatial resolution . Therefore, several alternative patterning methods have been developed including inkjet printing, vapor jet, soft lithography, direct electron-beam writing, selective crystallization technique, and lift-off process. , However, these techniques mostly require two different processes for the fabrication of patterned oligomer semiconductors: (1) formation of crystalline oligomer semiconductors and (2) patterning of the organic semiconductors. The patterning process can be followed by the crystallization process, or vice versa .…”

How Nanoscience Translates into Technology: The Case of Self-Assembled Monolayers, Electron-Beam Writing, and Carbon Nanomembranes

“…After exposure to a sufficient dose of electrons, the intensity of the fullerene pentagonal pinch mode, as measured using Raman spectroscopy, is significantly reduced and spectra characteristic of glassy carbon are observed. Electrical measurements of the exposed fullerene films show that the film, which is highly insulating when unexposed, has a conductivity comparable with glassy carbon or graphite after electron-beam irradiation.…”

“…After exposure to a sufficient dose of electrons, the intensity of the fullerene pentagonal pinch mode, as measured using Raman spectroscopy, is significantly reduced and spectra characteristic of glassy carbon are observed. Electrical measurements of the exposed fullerene films 36 show that the film, which is highly insulating when unexposed, has a conductivity comparable with glassy carbon or graphite after electron-beam irradiation. It can be seen, therefore, that a variety of chemical pathways can be utilized to create cross-linked thin resist films from a wide range of molecules including SAMs, molecular glasses, triphenylenes, and fullerenes.…”