Recently, novel two-dimensional materials, e.g., Xenes
(graphdiyne,
phosphorene, bismuthene, antimonene, etc.) and MXenes, have drawn
great attention in nanophotonics due to their excellent flexibility,
high photothermal conversion efficiency, and large thermal conductivity.
Although the Xenes and MXenes have achieved rapid progress in many
fields over the past decade, their relatively poor photodetection
and nonlinear photonics have still limited their practical applications.
In this work, a mixed-dimensional 2D MXene V2CT
x
nanosheet (NS)/0D bismuth quantum dot (Bi QD)-based
heterostructure fabricated by a combination of selective etching and
the hydrothermal method was simply deposited onto a clean poly(ethylene
terephthalate) substrate with an embedded regular Ag lattice to prepare
a flexible photoelectrochemical (PEC) electrode. The PEC result shows
that the as-fabricated flexible electrode not only exhibits significantly
improved photocurrent density (32.7 μA cm–2) and photoresponsivity (906 μA W–1) compared
to individual MXene V2CT
x
NSs
and Bi QDs but also displays high stability with a stable photocurrent
density even after 200 bending cycles at 60°. Taking advantage
of the Kerr effect of both MXene V2CT
x
NSs and Bi QDs, an all-optical switcher based on this mix-dimensional
heterostructure for the spatial cross-phase modulation has also been
realized with a preferred modulation depth. Density functional theory
calculations provide direct evidence for the strong internal built-in
electric field (7.3 × 107 eV m–1) created by the heterostructure for the enhancement of both photodetection
and nonlinear photonics. The integration of Xenes or MXene-based mixed-dimensional
heterostructures provides a concept and fundamental guidance to construct
next-generation optoelectronic and photonic devices.