2022
DOI: 10.1021/acs.chemmater.2c01602
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Direct Epitaxial Growth of InP Nanowires on MoS2 with Strong Nonlinear Optical Response

Abstract: Mixed-dimensional van der Waals heterostructures are promising for research and technological advances in photonics and optoelectronics. Here we report vapor–liquid–solid (VLS) method-based van der Waals epitaxy of one-dimensional InP nanowires (NWs) directly on two-dimensional MoS2. With optimized growth parameters (V/III ratio, flow rates of precursors, and growth temperature), we successfully grow high-quality InP NWs on MoS2. The density and vertical yield of NWs on MoS2 are significantly high. Due to the … Show more

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Cited by 9 publications
(1 citation statement)
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“…In 2020, Wu et al reported that taking advantage of low-temperature solution-processability, excellent light absorption coefficient, and long charge carrier diffusion length, 0D perovskite CsPbI 3– x Br x QDs were integrated onto monolayer MoS 2 to facilitate the interfacial photocarrier separation and carrier injection, which exhibited a high R of 7.7 × 10 4 A W –1 , a specific detectivity of ≈5.6 × 10 11 Jones, and an external quantum efficiency exceeding 10 7 %. In addition, in 2022, a mixed-dimensional heterostructure based on 1D InP nanowires and 2D MoS 2 NSs was successfully fabricated by a vapor–liquid–solid method, which demonstrated stronger second and third harmonic responses and odd-order high harmonic generation up to seventh order . Based on these merits of mixed-dimensional heterostructures, it is anticipated that 2D/0D mixed-dimensional heterostructures can make full use of the merits of each component, MXene and Bi, to meet the growing demand of next-generation (opto)­electronic devices and advanced photonic devices.…”
Section: Introductionmentioning
confidence: 99%
“…In 2020, Wu et al reported that taking advantage of low-temperature solution-processability, excellent light absorption coefficient, and long charge carrier diffusion length, 0D perovskite CsPbI 3– x Br x QDs were integrated onto monolayer MoS 2 to facilitate the interfacial photocarrier separation and carrier injection, which exhibited a high R of 7.7 × 10 4 A W –1 , a specific detectivity of ≈5.6 × 10 11 Jones, and an external quantum efficiency exceeding 10 7 %. In addition, in 2022, a mixed-dimensional heterostructure based on 1D InP nanowires and 2D MoS 2 NSs was successfully fabricated by a vapor–liquid–solid method, which demonstrated stronger second and third harmonic responses and odd-order high harmonic generation up to seventh order . Based on these merits of mixed-dimensional heterostructures, it is anticipated that 2D/0D mixed-dimensional heterostructures can make full use of the merits of each component, MXene and Bi, to meet the growing demand of next-generation (opto)­electronic devices and advanced photonic devices.…”
Section: Introductionmentioning
confidence: 99%