Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deep-level defects in Ge

Abstract

Quenching experiments have been performed on both n-and p-type Ge in a dedicated furnace using infrared lamp heating. The capture and emission characteristics of the induced deep-level defects in the quenched samples were investigated by means of Deep Level Transient Spectroscopy. For all defect levels, a high impact of capture in the transition region (slow capture) was found. An empirical approach to analyse this effect is presented, which allows to extract reliable capture crosssection parameters. The defect parameters thus obtained were compared with previously published data and it was found that some prominent quenching-induced deep levels are related to metal impurities (Cu and Ni), while others may be vacancy-related.

Tuning the Doping of Epitaxial Graphene on a Conventional Semiconductor via Substrate Surface Reconstruction

“…[25] has been misled by the incorrect hypothesis that hydrogen remains intercalated below graphene up to 900 °C. Moreover, high temperature annealing drives in Ge the formation of defects, such as vacancies, that are known to induce significant electronic modifications in the Ge substrate [26][27][28][29]. As a result of the complex behavior and limited information, a compelling theoretical picture has not been developed yet.…”

“…The location of the vacancy is highlighted by the black circle in Figure 4a,b. As known in the literature [14,[26][27][28][29],…”

“…Thus, in order to obtain information on the band structure of the whole system on a larger scale, we use angle-resolved photoemission spectroscopy (ARPES), which has been previously used to characterize phase γ as well as for a sample where the phase was not determined . In addition, high-temperature annealing drives in Ge the formation of defects, such as vacancies, that are known to induce significant electronic modifications in the Ge substrate. − As a result of the complex behavior and limited information, a compelling theoretical picture has not been developed yet. Earlier attempts to build models able to reproduce the experimental results required the presence of an extraordinary high dopant segregation …”

Determination of Majority Carrier Capture Rates via Deep Level Transient Spectroscopy

“…Since this range decreases when increasing V r , just like the slow capture contribution as discussed by Pons [8], in Ref. [16] this effect was also attributed to slow capture. We show that in this case fitting the data via Method 2 is the best option for obtaining reliable estimates of capture rates and cross-sections.…”

Carbon-Related Defects in Si:C/Silicon Heterostructures Assessed by Deep-Level Transient Spectroscopy

“…34 The second behavior is illustrated by Fig. 11b at a bias pulse from 0 V to +0.7 V and showing an initial fast trap filling, saturating at about 1 μs, followed by a second slow-filling component.…”