Direct evidence for 8-interstitial-controlled nucleation of extended defects in c-Si

Schiettekatte, F.; Roorda, S.; Poirier, R.; Fortin, Marie‐Fabienne; Chazal, S.; Héliou, R

doi:10.1063/1.1336163

Cited by 9 publications

(4 citation statements)

References 16 publications

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“…Stable compact interstitial clusters with 8 members have been suggested. 35,57 These results were further supported by direct observation 58 of the enhanced stability of the I 8 cluster. Furthermore, atomistic simulations of the Ostwald ripening process for the nucleation and growth of the interstitial clusters show 59 that the transition from compact to elongated structures occurs above the cluster with "n ¼ 8" members.…”

Section: -3supporting

confidence: 59%

Localised vibrational mode spectroscopy studies of self-interstitial clusters in neutron irradiated silicon

Londos

Antonaras

Chroneos

2013

Journal of Applied Physics

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The evolution of self-interstitial clusters in silicon (Si), produced by fast neutron irradiation of silicon crystals followed by anneals up to 750 C, is investigated using localised vibrational mode spectroscopy. A band at 582 cm À1 appears after irradiation and is stable up to 550 C was attributed to small self-interstitial clusters (I n , n 4), with the most probable candidate the I 4 structure. Two bands at 713 and 758 cm À1 arising in the spectra upon annealing of the 582 cm À1 band and surviving up to $750 C were correlated with larger interstitial clusters (I n , 5 n 8), with the most probable candidate the I 8 structure or/and with chainlike defects which are precursors of the {311} extended defects. The results illustrate the presence of different interstitial clusters I n , at the various temperature intervals of the material, in the course of an isochronal anneal sequence. As the annealing temperature increases, they evolve from first-order structures with a small number of self-interstitials (I n , n 4) for the temperatures 50 < T < 550 C, to second order structures (I n , 5 n 8) with a larger number of interstitials, for the temperatures 550 < T < 750 C. V C 2013 AIP Publishing LLC. [http://dx.

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Section: -3supporting

confidence: 59%

Localised vibrational mode spectroscopy studies of self-interstitial clusters in neutron irradiated silicon

Londos

Antonaras

Chroneos

2013

Journal of Applied Physics

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“…This binding is found essential to match TED boron implant anneal between 600 -800 ± C [19,20]. This evidence has also been corroborated independently by Schiettekatte et al in [22]. Obviously, the clusters can be grown beyond size 9 using the same methodology.…”

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confidence: 69%

Growth of Precursors in Silicon Using Pseudopotential Calculations

2002

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Based on the results of pseudopotential calculations, the progression of a single interstitial into small compact clusters and ultimately into chain-like defects is examined. For clusters that consist of more than eight interstitials, the capture of bond-centered interstitials reveals a change in the growth mechanism leading to enhanced stability of clusters. The five-interstitial model is proposed to be a plausible candidate for optically active W centers, observed in ion irradiated silicon.

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“…Using inverse modelling of the cluster ripening process, Cowern et al [19] predicted a number of intermediate size I-clusters such as I 4 and I 8 for small duration annealing at 600 • C and a broad distribution of cluster sizes I n , with n in the range of 10-200. Experimental evidence of I 8 -cluster-nucleated formation of extended defects was obtained from TEM analyses [20]. However, no direct correlation exists with the simulations results on the electrical and optical signatures of the I-clusters reported so far.…”

Section: Introductionmentioning

confidence: 92%

Photoluminescence signature of silicon interstitial cluster evolution from compact to extended structures in ion-implanted silicon

Giri¹

2005

Semicond. Sci. Technol.

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Low temperature photoluminescence (PL) studies have been carried out on ion-implanted silicon in order to elucidate upon the structure evolution of the self-interstitial (I) clusters as a function of implantation dose, energy, species and post-implantation annealing conditions. PL measurements on as-implanted and low temperature annealed (up to 450 • C) Si show a sharp X band and a W band at 1200 nm and 1218 nm, respectively. The W band shows gradual quenching of PL above ∼60 K with a characteristic activation energy of 59 meV. We argue that the W band originates from a compact di-interstitial cluster in Si. Short duration annealing at 600 • C results in multiple sharp peaks in the range of 1228-1400 nm for the high energy (MeV) and high dose ( 1 × 10 12 cm −2 ) implantation, while low energy (keV) or low dose ions induce two broad peaks in the same wavelength range. Prolonged annealing at 600 • C induces primarily two broad peaks centred at 1322 nm and 1392 nm. These broad, but distinct, PL signatures are attributed to a chain of I-clusters, while the multiple sharp peaks possibly result from multiple configurations/ excited states of the compact but bigger I-clusters. For annealing at and above 680 • C and dose of 1 × 10 13 cm −2 , the sharp PL peak observed at 1376 is attributed to {3 1 1} rod-like defects. We argue that the changing line shape and energy of the PL spectra with processing temperature is a possible indicator of the shape evolution of the clusters from compact to extended structures as predicted recently from simulation.

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Direct evidence for 8-interstitial-controlled nucleation of extended defects in c-Si

Cited by 9 publications

References 16 publications

Localised vibrational mode spectroscopy studies of self-interstitial clusters in neutron irradiated silicon

Localised vibrational mode spectroscopy studies of self-interstitial clusters in neutron irradiated silicon

Growth of Precursors in Silicon Using Pseudopotential Calculations

Photoluminescence signature of silicon interstitial cluster evolution from compact to extended structures in ion-implanted silicon

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