Direct evidence of defect annihilation during structural relaxation of amorphous indium phosphide

Azevedo, G. de M.; Glover, Christopher; Ridgway, Mark C; Yu, Kin Man; Foran, Garry J

doi:10.1103/physrevb.68.115204

Cited by 19 publications

(22 citation statements)

References 23 publications

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“…The crystalline volume fraction appears unaffected by higher RTA temperatures which may suggest a mostly complete transformation. These observations are consistent with amorphous‐to‐crystalline transformations that are known to occur at even lower temperatures for InP: the onset of the transformation is observed at ∼220 °C after few hours‐long isochronal annealing cycles . The exact fraction of the small residual amorphous phase signature remains difficult to quantify as our estimates likely include unassigned contributions from peak tails of symmetrical reflections and from other sources of diffuse scattering related to alloy imperfections.…”

Section: Resultssupporting

confidence: 79%

Microstructural evolution of a recrystallized Fe-implanted InGaAsP/InP heterostructure

Fekecs

Korinek

Chicoine

et al. 2015

Phys. Status Solidi A

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Through the recrystallization of an amorphous heterostructure, obtained by MeV Fe ion implantation, we are able to tailor a standard epitaxial semiconductor material, a small gap InGaAsP/InP alloy, for photoconductive terahertz optoelectronics. Here, we report on microstructural changes occurring in the material over a broad range of rapid thermal annealing temperatures, using X‐ray diffraction line profile analysis and transmission electron microscopy. Results show a complete amorphous transition of the heterostructure after multiple‐energy implantations done at 83 K. Upon thermal annealing, multiple structural layers develop via solid phase epitaxy and solid phase recrystallization. The photoconductive InGaAsP layer becomes polycrystalline and submicron grained, with high crystalline volume fraction and apparent ⟨110⟩ texture. Many grains are elongated and internally faulted, with high densities of planar faults occurring on closed‐packed (111) planes. The X‐ray diffraction line broadening is anisotropic and evolves with rapid thermal annealing temperatures. At 500 °C, the X‐ray coherent domain size estimate of 10 nm is aligned reasonably with electron microscopy made in faulted areas. Above 500 °C, a significant decrease of the planar fault density is detected. We discuss the influence of these microstructural changes happening with recrystallization temperatures on the ultrafast photoconductive response of Fe‐implanted InGaAsP/InP.

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Section: Resultssupporting

confidence: 79%

Microstructural evolution of a recrystallized Fe-implanted InGaAsP/InP heterostructure

Fekecs

Korinek

Chicoine

et al. 2015

Phys. Status Solidi A

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“…Such low-temperature annealing leads to structural relaxation with the aim of achieving the intrinsic amorphous phase governed by the minimum-energy configuration. 18,19 III. DATA ANALYSIS…”

Section: Methodsmentioning

confidence: 99%

Anisotropic vibrations in crystalline and amorphous InP

et al. 2009

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The temperature-dependent evolution of atomic vibrations in crystalline and amorphous InP has been studied using extended x-ray absorption fine-structure ͑EXAFS͒ spectroscopy. Measurements were performed at the In K edge for temperatures in the range of 20-295 K. In crystalline InP, the first nearest-neighbor ͑NN͒ EXAFS Debye-Waller factor, representative of the correlated mean-square relative displacement ͑MSRD͒ parallel to the bond direction, is considerably smaller than the uncorrelated mean-square displacement ͑MSD͒ determined from x-ray diffraction measurements. In contrast, the MSRD perpendicular to the bond direction agrees well with the MSD. This clearly demonstrates that vibrations of two neighboring atoms relative to each other are strongly reduced along the bond direction but are unhindered perpendicular to it, consistent with the wellknown behavior of III-V semiconductors where bond bending is energetically favored over bond stretching. With increasing interatomic distance, the correlation of atomic motion quickly vanishes as manifested by increased EXAFS Debye-Waller factors. For the third NN shell the value closely approaches the MSD demonstrating the nearly uncorrelated motion of atoms only three shells apart. In the amorphous phase, only information about the first NN shell is accessible although the latter is now comprised of both P and In atoms. The EXAFS Debye-Waller factors are significantly higher than in the crystalline phase but exhibit a very similar temperature dependence. This results from strongly increased structural disorder in the amorphous phase whereas the thermally induced disorder is very similar to that in crystalline InP. A correlated Einstein model was fitted to the Debye-Waller factors yielding Einstein temperatures that vary as functions of the vibrational phase difference and reduced mass of the atomic pair, and represent a measure of the strength and thermal evolution of the corresponding relative vibrations.

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“…Extended x-ray absorption fine structure (EXAFS) spectroscopy is a highly effective technique for characterization of ion-implantation-induced structural changes 5 in both elemental (Si, 6 Ge (Refs. 7 and 8)) and binary (Ge x Si 1Àx , 9 GaP, 10 GaAs, 11 InP, [12][13][14] and InAs (Ref. 15)) semiconductors.…”

Section: Introductionmentioning

confidence: 99%

“…69 Ga implant fluences (in cm À2 ) for the multiple-energy implant sequences. Â 10 15 2.7 Â 10 15 1.7 Â 10 15 1.8 Â 1015 RT 1 Â 1016 3.4 Â 10 15 2.7 Â 10 15 1.7 Â 10 15 1.8 Â 10 15 À180 C 5 Â 1015 1.7 Â 10 15 1.4 Â 10 15 8.5 Â 10 14 9.0 Â 10 14 RT 5 Â 1015 1.7 Â 10 15 1.4 Â 10 15 8.5 Â 10 14 9.0 Â 10 14 À180 C 2.5 Â 10 15 8.5 Â 10 14 7.0 Â 10 14 4.3 Â 10 14 4.5 Â 10 14 À180 C 2.5 Â 10 15 8.5 Â 10 14 7.0 Â 10 14 4.3 Â 10 14 4.5 Â 10 14 RT 1 Â 1015 3.4 Â 10 14 2.7 Â 10 14 1.7 Â 10 14 1.8 Â 10 14 RT 5 Â 1014 1.7 Â 10 14 1.4 Â 10 14 8.5 Â 10 14 9.0 Â 10 13 RT 2.5 Â 10 14 8.5 Â 10 13 7.0 Â 10 13 4.3 Â 10 13 4.5 Â 1013 RT…”

mentioning

confidence: 99%

Extended x-ray absorption fine structure study of porous GaSb formed by ion implantation

Kluth

Johannessen

et al. 2011

Journal of Applied Physics

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Porous GaSb has been formed by Ga ion implantation into crystalline GaSb substrates at either room temperature or À180 C. The morphology has been characterized using scanning electron microscopy and the atomic structure was determined using extended x-ray absorption fine structure spectroscopy. Room-temperature implantation at low fluences leads to the formation of $20-nm voids though the material remains crystalline. Higher fluences cause the microstructure to evolve into a network of amorphous GaSb rods $15 nm in diameter. In contrast, implantation at À180 C generates large, elongated voids but no rods. Upon exposure to air, the surface of the porous material is readily oxidized yielding Ga 2 O 3 and metallic Sb precipitates, the latter resulting from the reduction of unstable Sb 2 O 3. We consider and discuss the atomic-scale mechanisms potentially operative during the concurrent crystalline-to-amorphous and continuous-to-porous transformations.

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Direct evidence of defect annihilation during structural relaxation of amorphous indium phosphide

Cited by 19 publications

References 23 publications

Microstructural evolution of a recrystallized Fe-implanted InGaAsP/InP heterostructure

Microstructural evolution of a recrystallized Fe-implanted InGaAsP/InP heterostructure

Anisotropic vibrations in crystalline and amorphous InP

Extended x-ray absorption fine structure study of porous GaSb formed by ion implantation

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