2016
DOI: 10.1016/j.apsusc.2016.03.122
|View full text |Cite
|
Sign up to set email alerts
|

Direct evidence of reactive ion etching induced damages in Ge2Sb2Te5 based on different halogen plasmas

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

0
8
0

Year Published

2016
2016
2022
2022

Publication Types

Select...
8
1

Relationship

0
9

Authors

Journals

citations
Cited by 23 publications
(8 citation statements)
references
References 20 publications
0
8
0
Order By: Relevance
“…[26,27] The precise pattern placement of phase-changing meta-atoms, however, is often challenging, especially at the nanoscale due to the limitations of etching processes on inorganic material systems. [28,29] Nanoscale patterning of the material components is critical to realize dynamic metasurfaces that can modulate the plasmonic resonance continuously from microwave to visible ranges. [30,31] Recently, active nanoplasmonic devices based on metal hybrids (e.g., MgH 2 and TiH 2 ) switched their optical properties in response to hydrogen exposure and achieved full-color rendering, but additional infrastructure to control and measure the safe flow of hydrogen is inevitable.…”
Section: Introductionmentioning
confidence: 99%
“…[26,27] The precise pattern placement of phase-changing meta-atoms, however, is often challenging, especially at the nanoscale due to the limitations of etching processes on inorganic material systems. [28,29] Nanoscale patterning of the material components is critical to realize dynamic metasurfaces that can modulate the plasmonic resonance continuously from microwave to visible ranges. [30,31] Recently, active nanoplasmonic devices based on metal hybrids (e.g., MgH 2 and TiH 2 ) switched their optical properties in response to hydrogen exposure and achieved full-color rendering, but additional infrastructure to control and measure the safe flow of hydrogen is inevitable.…”
Section: Introductionmentioning
confidence: 99%
“…The XPS in Figure c demonstrates the Al 2p and Cl 2p are presented in the charged product. The existence of the TeCl 3 AlCl 4 compound is evident from the binding energy shift of the Te 3d 5/2 and Te 3d 3/2 peaks from 573.1 and 583.5 eV to 576.5 and 586.8 eV, corresponding to Te 4+ . Other residuals of Te 3d 5/2 and Te 3d 3/2 at 573.1 and 583.5 eV indicate that the intermediate of Te 4 (AlCl 4 ) 2 is not completely oxidized to TeCl 3 AlCl 4 . Then, discharging leads to the recovery of Te 3d peak but with Al 2p and Cl 2p peaks, probably caused by a small amount of trapped species.…”
Section: Resultsmentioning
confidence: 99%
“…The transmittance of electrochromic films can also be real-time tuned by applying an external electrical field, though additional design of circuits is needed to integrate the active films with capacitor electrodes [31,32]. What is more, dynamic and high-resolution multicolor display requires configurable 3D-fabrication techniques in nanoscale, and the feasible patterning and etching processes for the inorganic materials are still limited due to their resistant chemical composition [33].…”
Section: Introductionmentioning
confidence: 99%