2022
DOI: 10.1007/s13391-022-00342-y
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Direct Fabrication of Vertically Stacked Double Barrier Tunnel Junctions Based on Graphene and h-BN

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Cited by 2 publications
(2 citation statements)
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“…The two distinctive peaks located at 190.45 eV and 398.4 eV correspond to B 1s and N 1s, respectively. 5,26,27 We assume that the B/N ratio in high-quality h-BN is 1 : 1, and the B/N ratio in C-h-BN is calculated to be 0.96 : 1. This indicates that the C-h-BN sample has a higher density of B vacancies than high-quality h-BN.…”
Section: Resultsmentioning
confidence: 99%
“…The two distinctive peaks located at 190.45 eV and 398.4 eV correspond to B 1s and N 1s, respectively. 5,26,27 We assume that the B/N ratio in high-quality h-BN is 1 : 1, and the B/N ratio in C-h-BN is calculated to be 0.96 : 1. This indicates that the C-h-BN sample has a higher density of B vacancies than high-quality h-BN.…”
Section: Resultsmentioning
confidence: 99%
“…Plasma is usually generated by the radiofrequency between two electrodes. PECVD has developed a reputation for its low-temperature ambient conditions, transfer-free process, and industrial compatibility, which enables the scalable and low-cost preparation of 2D materials [82][83][84][85][86][87]. Moreover, artificial neuron networks can be used in a CVD process to identify and characterize 2D vdWH, ameliorating the efficiency of identifying sample quality and optimizing synthesis parameters [88].…”
Section: Chemical Vapor Depositionmentioning
confidence: 99%