Direct growth of few layer graphene on hexagonal boron nitride by chemical vapor deposition

Ding, Xuli; Ding, Guqiao; Xie, Xiaoming; Huang, Fuqiang; Jiang, Mianheng

doi:10.1016/j.carbon.2011.02.022

Cited by 141 publications

(100 citation statements)

References 11 publications

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“…Recently, the chemical vapor deposition (CVD) process has been used to grow graphene on a metal-substrate-supported h-BN single layer with either a strong 34 or weak 36,37 interaction between the h-BN single layer and the metal substrates and a well-defined orientation with respect to the h-BN layer. 34 Conversely, h-BN can also be grown on graphene by the CVD process.…”

Section: Discussionmentioning

confidence: 99%

Tunable and sizable band gap of single-layer graphene sandwiched between hexagonal boron nitride

et al. 2012

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Opening a tunable and sizable band gap in single-layer graphene (SLG) without degrading its structural integrity and carrier mobility is a significant challenge. Using density functional theory calculations, we show that the band gap of SLG can be opened to 0.16 eV (without an electric field) and 0.34 eV (with a strong electric field) when properly sandwiched between two hexagonal boron nitride single layers. The zero-field band gaps are increased by more than 50% when the many-body effects are included. The ab initio quantum transport simulation of a dual-gated field effect transistor (FET) made of such a sandwich structure reveals an electric-field-enhanced transport gap, and the on/off current ratio is increased by a factor of 8.0 compared with that of a pure SLG FET. The tunable and sizeable band gap and structural integrity render this sandwich structure a promising candidate for high-performance SLG FETs. NPG Asia Materials (2012) 4, e6; doi:10.1038/am.2012.10; published online 17 February 2012Keywords: density functional theory; electric field; graphene; h-BN sheet; quasiparticle correction; transport properties INTRODUCTION Despite its extremely high carrier mobility (1. 5Â10 4 cm 2 V À1 s À1 for a SiO 2 -supported sample 1 and 2Â10 5 cm 2 V À1 s À1 for a suspended sample 2,3 ), pristine graphene cannot be used for effective roomtemperature field effect transistors (FET) because of its zero band gap. Opening and tailoring a band gap in graphene is probably one of the most important and urgent research topics in the graphene research currently. A large number of methods have been developed to open a band gap in graphene, and these methods can be classified into the following two types, depending on whether they preserve the integrity of the honeycomb structure: in a type I method, the honeycomb structure is destroyed, and in a type II method, the honeycomb structure of graphene is preserved. Typical type I methods include cutting graphene into nanoribbons, 4 making graphene nanomeshes, 5 and chemical functionalization. 6,7 The main disadvantage of the type I methods is that the carrier mobility and on-state current are greatly reduced because the destruction of the honeycomb structure introduces scattering centers, enhances the carrier effective mass and produces a non-tunable band gap.Unlike the type I method, high carrier mobility can be maintained in the type II method because the honeycomb structure is maintained. Typical type II methods include graphene-substrate interaction 8,9 and the application of strain. 10 The graphene band gap induced by a substrate is not tunable. The most effective type II method is the application of an external electric field to the graphene. Both

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Section: Discussionmentioning

confidence: 99%

Tunable and sizable band gap of single-layer graphene sandwiched between hexagonal boron nitride

et al. 2012

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“…Finally, we remark that the direct comparison between theoretical predictions and experimental results is often questionable, since most calculations are carried out in idealized situations missing many of the structural details ruling over the experiments. As a matter of fact, real graphene samples, fabricated either by epitaxial film growth [135,136] or CVD [16,137,138], are hardly pristine due to limitations in the growth process and because of substrates and, therefore, they are characterized by defects limiting the size of pristine crystalline domains. Their multigrain structure, with dimensions down to the microand nanoscale, is likely an important pre-existing cause for the wide range of κ values reported above.…”

Section: Thermal Transport Propertiesmentioning

confidence: 99%

Scaling properties of polycrystalline graphene: a review

et al. 2016

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We present an overview of the electrical, mechanical, and thermal properties of polycrystalline graphene. Most global properties of this material, such as the charge mobility, thermal conductivity, or Young's modulus, are sensitive to its microstructure, for instance the grain size and the presence of line or point defects. Both the local and global features of polycrystalline graphene have been investigated by a variety of simulations and experimental measurements. In this review, we summarize the properties of polycrystalline graphene, and by establishing a perspective on how the microstructure impacts its large-scale physical properties, we aim to provide guidance for further optimization and improvement of applications based on this material, such as flexible and wearable electronics, and high-frequency or spintronic devices.

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“…The electron mobility of graphene on h-BN substrates is greater than that on silicon dioxide substrates. [1][2][3][4][5] The use of h-BN substrates also leads to a fractional quantum Hall effect with an anomalous Landau gap 6) and new Dirac points. 7) It has been demonstrated that h-BN can be grown on graphene layers by chemical vapor deposition.…”

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confidence: 99%

Electronic Properties of Graphene/h-BN Bilayer Superlattices

Sakai

Saito

2012

J. Phys. Soc. Jpn.

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We study the electronic properties of superlattices composed of a graphene and hexagonal boron nitride (h-BN) bilayer in the framework of density functional theory. Depending on the stacking sequences of superlattices, various interesting electronic properties are observed. The stable superlattice with the shortest stacking period is found to be a narrow-gap semiconductor with a very small effective mass. On the other hand, almost linear dispersion relations should appear around the K point in a stable superlattice with a longer stacking period. These almost linear bands are found to split owing to weak but finite inter-graphene interactions mediated by h-BN bilayers.

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Direct growth of few layer graphene on hexagonal boron nitride by chemical vapor deposition

Cited by 141 publications

References 11 publications

Tunable and sizable band gap of single-layer graphene sandwiched between hexagonal boron nitride

Tunable and sizable band gap of single-layer graphene sandwiched between hexagonal boron nitride

Scaling properties of polycrystalline graphene: a review

Electronic Properties of Graphene/h-BN Bilayer Superlattices

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