Direct growth of freestanding GaN on C-face SiC by HVPE

Tian, Yuan; Shao, Yongliang; Wu, Yongzhong; Hao, Xiaopeng; Zhang, Lei; Dai, Yuanbin; Huo, Qin

doi:10.1038/srep10748

Cited by 53 publications

(38 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Thus, the in-plane direction of GaN was dependent on the in-plane direction of SiC substrate, and not dependent on the direction of the periodic nanostructures and laser scanning. The relationship of in-plane direction of GaN and SiC is in agreement with the results reported by other groups [21][22][23].…”

Section: Selective Gan Growthsupporting

confidence: 82%

Selective growth of GaN on SiC substrates with femtosecond-laser-induced periodic nanostructures

Miyagawa

Okabe

Miyachi

et al. 2016

Trans. Mat. Res. Soc. Japan

View full text Add to dashboard Cite

A 6H-SiC substrate with femtosecond-laser-induced periodic nanostructures was used as an underlayer for GaN growth. GaN nuclei were formed on the periodic nanostructure selectively. The in-plane direction of GaN was dependent on the in-plane direction of the SiC substrate, and no dependent on the direction of the periodic nanostructures or laser scanning. We suggest that the fine structure and high wettability at the region of the periodic nanostructure enhanced the adsorption of GaN nuclei preferentially. This technique will enable selective growth without masks or solution exposure.

show abstract

Section: Selective Gan Growthsupporting

confidence: 82%

Selective growth of GaN on SiC substrates with femtosecond-laser-induced periodic nanostructures

Miyagawa

Okabe

Miyachi

et al. 2016

Trans. Mat. Res. Soc. Japan

View full text Add to dashboard Cite

show abstract

“…13 Region 3 is characterized by the predominance of the CL peak with the maximum at 3.42 eV which is attributed to the band edge emission of the hexagonal phase GaN. 41 The spectral distribution of UV cathodoluminescence in region 2 is similar to that inherent to region 1 ( Figure S4), although, according to the results presented in Figures 5 and 7, the integral intensity of CL in region 2(2 in cross-sectional view) is lower than in region 1(1 ). It is worth noting that, along with the band edge CL peak at 3.42 eV, the region 3(3 ) exhibits a much stronger yellow emission at around 2 eV, see Figures 5b-5e and Figures 7f-7h,7j-7l.…”

Section: Ecs Journal Of Solid State Science and Technology 5 (5) P21mentioning

confidence: 99%

Self-Organized Three-Dimensional Nanostructured Architectures in Bulk GaN Generated by Spatial Modulation of Doping

Tiginyanu

Stevens‐Kalceff

Sarua

et al. 2016

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Self-organized 3D nanostructured architectures including quasi-ordered concentric hexagonal structures generated during the growth of single crystalline n-GaN substrates by hydride vapor phase epitaxy (HVPE) are reported. The study of as-grown samples by using Kelvin Probe Force Microscopy shows that the formation of self-organized architectures can be attributed to fine modulation of doping related to the spatial distribution of impurities. The specific features of nanostructured architectures involved have been brought to light by using electrochemical and photoelectrochemical etching techniques which are highly sensitive to local doping. The analysis of the results shows that the formation of self-organized spatial architectures in the process of HVPE is caused by the generation of V-pits and their subsequent overgrowth accompanied by the growth in variable direction. It is demonstrated for the first time that the electrical and luminescence properties of HVPE-grown GaN are spatially modulated throughout, including islands between overgrown V-pit regions. The dependence of doping upon growth direction is confirmed by the micro-cathodoluminescence characterization of HVPE-grown pencil-like microcrystals exposing various crystallographic planes along the tip. These results are indicative of new possibilities for defect engineering in gallium nitride and for three-dimensional spatial nanostructuring of this important electronic material by controlling the growth direction. Gallium Nitride (GaN), a wide-bandgap semiconductor compound (E g = 3.4 eV at 300 K), is considered nowadays the second most important semiconductor material after Si. Over the past decades it has played a major role in the development of modern solid-state lighting industry.1-3 An intensive investigation of this compound started in 1970's, but with minimal success in the development of real applications. In the absence of native bulk material, GaN epilayers were grown on foreign substrates and, as a result of the large lattice mismatch and difference in thermal expansion coefficients, the overgrown films contained a high concentration of threading dislocations. The fascinating point, however, is that even in the presence of very high concentrations of dislocations, sometimes exceeding 10 10 cm −2 , gallium nitride exhibits intense luminescence, a property that makes the compound unique in comparison with other III-V materials, such as GaAs, GaP and InP. This particular feature along with other material characteristics were of paramount importance for the development and subsequent commercialization of GaN-based blue light emitting diodes by the mid-1990s. 4 This significant optoelectronic success resulted in the Nobel Prize for Physics being awarded to Shuji Nakamura, Isamu Akasaki and Hiroshi Amano, in 2014. There is no doubt that lighting technologies based on GaN and related nitrides will continue their impactful evolution, particularly in view of the recent demonstration of electrically pumped inversionless polariton lasing at room temper...

show abstract

“…In order to increase the thermal conductivity of polymeric materials, carbon based conductive fillers such as carbon nanotubes (CNTs), carbon black, graphite, graphene, and carbon fibers are commonly utilized owing to their oxidation resistance and easy formation of conductive networks, and lightweight properties [4]. Moreover 1D CNTs, 2D graphene, and graphite nanoplatelets have attracted a significant attention during the past decade owing to their high intrinsic thermal conductivities thus facilitating the formation of efficient heat conducting networks within the polymer matrix [5].…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, the thermal stability and flammability of polymer can be improved with the incorporation of GNP into polypropylene (PP) [11]. However in-plane alignment of GNP in thin thermal interface material layers suppresses the through-plane heat transport, which limits the GNP performance in the geometry normally required for thermal management applications [5,12]. In literature, hybrid filler formulations were used due to synergistic enhancement of the through-plane thermal conductivity of GNP with conventional low aspect ratio aluminum (Al) and aluminum oxide (Al 2 O 3 ) micro-particle fillers [5,[13][14][15].…”

Section: Introductionmentioning

confidence: 99%

“…However in-plane alignment of GNP in thin thermal interface material layers suppresses the through-plane heat transport, which limits the GNP performance in the geometry normally required for thermal management applications [5,12]. In literature, hybrid filler formulations were used due to synergistic enhancement of the through-plane thermal conductivity of GNP with conventional low aspect ratio aluminum (Al) and aluminum oxide (Al 2 O 3 ) micro-particle fillers [5,[13][14][15]. However the demanded properties of current day heat transfer equipments are compactness, lightweight, manufacturability, and lower cost [16].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The Using of Graphene Nano‐Platelets for a Better through‐Plane Thermal Conductivity for Polypropylene

et al. 2018

View full text Add to dashboard Cite

In‐plane alignment of graphene nanoplatelets (GNPs) in thin thermal interface material layers suppresses the through‐plane heat transport, which limits the performance of materials. In order to suppress the in‐plane alignment of the GNP filler within polypropylene (PP) and increase the through‐plane component, modification of GNP (MG) was performed in this study. For this aim, GNP was treated with diallyldimethylammonium chloride solution and filled with PP at different weight fractions by using a laboratory type high‐speed thermo‐kinetic mixer. The effect of MG loading into PP on thermal conductivity and surface resistivity of PP was measured. With using MG as a conductive filler for PP, instead of GNP, through‐plane conductivity increased by 11%, however in‐plane conductivity decreased by 33%. Modified GNP‐filled PP showed better through‐plane conductivity and surface resistivity than those of unmodified GNP‐filled PP. Tensile and three point bending tests were performed to determine tensile and flexural properties of composites. Dynamic mechanical analysis was carried out to evaluate viscoelastic properties, such as storage modulus and loss modulus of composites. The thermal properties of samples were measured by using a differential scanning calorimetry, thermogravimetric analysis, and thermo‐mechanical analysis. Scanning electron microscopy was utilized to observe the fracture surfaces of the composites after tensile tests. POLYM. COMPOS., 40:E1320–E1328, 2019. © 2018 Society of Plastics Engineers

show abstract

Direct growth of freestanding GaN on C-face SiC by HVPE

Cited by 53 publications

References 40 publications

Selective growth of GaN on SiC substrates with femtosecond-laser-induced periodic nanostructures

Selective growth of GaN on SiC substrates with femtosecond-laser-induced periodic nanostructures

Self-Organized Three-Dimensional Nanostructured Architectures in Bulk GaN Generated by Spatial Modulation of Doping

The Using of Graphene Nano‐Platelets for a Better through‐Plane Thermal Conductivity for Polypropylene

Contact Info

Product

Resources

About