2015
DOI: 10.3389/fmats.2015.00030
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Direct Growth of Ge1−xSnx Films on Si Using a Cold-Wall Ultra-High Vacuum Chemical-Vapor-Deposition System

Abstract: Germanium-tin alloys were grown directly on Si substrate at low temperatures using a coldwall ultra-high vacuum chemical-vapor-deposition system. Epitaxial growth was achieved by adopting commercial gas precursors of germane and stannic chloride without any carrier gases. The X-ray diffraction analysis showed the incorporation of Sn and that the Ge 1−x Sn x films are fully epitaxial and strain relaxed. Tin incorporation in the Ge matrix was found to vary from 1 to 7%. The scanning electron microscopy images an… Show more

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Cited by 23 publications
(15 citation statements)
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“…Growth of GeSn on Ge is difficult due to low solubility (<1%) of Sn in Ge and the instability of α-Sn above 13 °C. In order to grow GeSn material, growth techniques were developed under non-equilibrium growth conditions such as low temperature growth via either MBE [10][11][12][13][14][15][16] , or CVD [17][18][19][20][21][22][23][24] . The CVD growth of GeSn has been investigated over a decade.…”
Section: Introductionmentioning
confidence: 99%
“…Growth of GeSn on Ge is difficult due to low solubility (<1%) of Sn in Ge and the instability of α-Sn above 13 °C. In order to grow GeSn material, growth techniques were developed under non-equilibrium growth conditions such as low temperature growth via either MBE [10][11][12][13][14][15][16] , or CVD [17][18][19][20][21][22][23][24] . The CVD growth of GeSn has been investigated over a decade.…”
Section: Introductionmentioning
confidence: 99%
“…20 The broadband at 150-200 cm À1 could be attributed to second-order acoustic overtones. 20 The vibration mode of Ge-Ga alloy is not detectable in the spectrum, which is different from other Ge alloys, e.g., GeSn and SiGe, 21,22 and most likely due to the similar atomic weight between Ga (69.74) and Ge (72.59). The inset in Fig.…”
Section: B Strain and Atomic Diffusions Induced Disordermentioning
confidence: 84%
“…The assembly consisted of a cylindrical quartz growth chamber with an industrial showerhead system (for uniform precursor gas delivery) at the top and a vacuum system (employing a turbomolecular pump and a mechanical pump) at the bottom connected through flanges. Germane (GeH 4 ) was chosen as the Ge precursor for film growth, as it is the most commercially available and the most economical precursor for Ge film growth [20]. The need for ultra-high vacuum conditions during film growth was circumvented by the deployment of an ex situ chemical cleaning procedure comprising of HF solution and H 2 SO 4 -H 2 O 2 solution baths to etch away the native oxide and get a hydrogen-terminated surface [17].…”
Section: A Apparatusmentioning
confidence: 99%