Direct Growth of Graphene/Hexagonal Boron Nitride Stacked Layers

Liu, Zheng; Li, Song; Zhao, Shizhen; Huang, Jia‐Qi; Ma, Lulu; Zhang, Jiangnan; Lou, Jun; Ajayan, Pulickel M.

doi:10.1021/nl200464j

Cited by 491 publications

(426 citation statements)

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“…1a-c, the carbon concentrations are 280 282 284 286 288 186 188 190 192 194 Binding energy (eV) Binding energy (eV) 100%, 65% and 0%, respectively. The change in composition is directly reflected in the colour of the samples, changing from light purple to light blue in the optical micrographs 17 . The three structures have distinct Raman signatures ( Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Recently, several attempts have been made to build graphene devices on h-BN substrates to exploit their complementary properties [7][8][9][10] . Progress in this direction has been limited by difficulties in achieving scalable growth of uniform h-BN layers using chemical vapour deposition, a technique used to deposit high-quality graphene layers [11][12][13][14][15][16][17][18][19] . There have also been a few attempts to co-deposit graphene and h-BN domains to build hybridized two-dimensional boron carbonitride (h-BNC) atomic layers [10][11][12][13][14][15][16][17][18][19][20][21][22] .…”

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confidence: 99%

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Direct chemical conversion of graphene to boron- and nitrogen- and carbon-containing atomic layers

et al. 2014

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Graphene and hexagonal boron nitride are typical conductor and insulator, respectively, while their hybrids hexagonal boron carbonitride are promising as a semiconductor. Here we demonstrate a direct chemical conversion reaction, which systematically converts the hexagonal carbon lattice of graphene to boron nitride, making it possible to produce uniform boron nitride and boron carbonitride structures without disrupting the structural integrity of the original graphene templates. We synthesize high-quality atomic layer films with boron-, nitrogen-and carbon-containing atomic layers with full range of compositions. Using this approach, the electrical resistance, carrier mobilities and bandgaps of these atomic layers can be tuned from conductor to semiconductor to insulator. Combining this technique with lithography, local conversion could be realized at the nanometre scale, enabling the fabrication of in-plane atomic layer structures consisting of graphene, boron nitride and boron carbonitride. This is a step towards scalable synthesis of atomically thin two-dimensional integrated circuits.

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Section: Resultsmentioning

confidence: 99%

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confidence: 99%

Direct chemical conversion of graphene to boron- and nitrogen- and carbon-containing atomic layers

et al. 2014

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“…It is difficult to estimate the defect density in graphene sitting on hBN, because the D peak of graphene and the main peak of hBN are located at the same position of 1,370 cm À 1 ( Supplementary Fig. S2d) 42 . As shown in Supplementary Fig.…”

Section: Methodsmentioning

confidence: 99%

Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

et al. 2013

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Atomically thin two-dimensional materials have emerged as promising candidates for flexible and transparent electronic applications. Here we show non-volatile memory devices, based on field-effect transistors with large hysteresis, consisting entirely of stacked two-dimensional materials. Graphene and molybdenum disulphide were employed as both channel and charge-trapping layers, whereas hexagonal boron nitride was used as a tunnel barrier. In these ultrathin heterostructured memory devices, the atomically thin molybdenum disulphide or graphene-trapping layer stores charge tunnelled through hexagonal boron nitride, serving as a floating gate to control the charge transport in the graphene or molybdenum disulphide channel. By varying the thicknesses of two-dimensional materials and modifying the stacking order, the hysteresis and conductance polarity of the field-effect transistor can be controlled. These devices show high mobility, high on/off current ratio, large memory window and stable retention, providing a promising route towards flexible and transparent memory devices utilizing atomically thin two-dimensional materials.

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“…For vertical heterostructures in particular, layer-by-layer growth allows direct control of the constituent materials in a serial fashion, and typically these techniques can be scaled to large lateral dimensions in a way that is not possible with exfoliated materials. Hence, a great deal of e ort has gone into adapting epitaxial growth methods to form atomic layers of MoS 2 , MoSe 2 , WSe 2 , h-BN, and others on graphene, [50,52,68,75,76] as well as graphene on h-BN. [77,78] Graphene itself has been formed in large-area lms using CVD on metal foils with varying degrees of quality.…”

Section: Introductionmentioning

confidence: 99%