Direct growth of graphene-MoS2 heterostructure: Tailored interface for advanced devices

Muñoz, Raül; López-Elvira, Elena; Munuera, Carmen; Frisenda, Riccardo; Sánchez‐Sánchez, Carlos; Martín‐Gago, José A.; Garcı́a-Hernández, M.

doi:10.1016/j.apsusc.2021.151858

Cited by 19 publications

(14 citation statements)

References 40 publications

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“…The Raman spectra shown in Figure 5E(ii), corresponding to the colored labels in Figure 5E(i), indicate that multilayered germanene formed on the entire Si 0.65 Ge 0.35 surface, except for the corners that were unexposed to the N 2 plasma. This result indicates the feasibility of plasma‐assisted processes for the large‐scale fabrication of multilayered 2D materials, such as arsenene, 106 violet phosphorene, 107 MoS 2 , 108 and silicene 109 Liquid‐phase exfoliation …”

Section: Germanene and Its Derivativesmentioning

confidence: 86%

Germanium‐based monoelemental and binary two‐dimensional materials: Theoretical and experimental investigations and promising applications

Zhao

Feng

2022

InfoMat

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Two-dimensional (2D) materials based on group IVA elements have attracted extensive attention owing to their rich chemical structures and novel properties. This comprehensive review focuses on the phases of Ge monoelemental and binary 2D materials including germanene and its derivatives, Ge-IVA binary compounds, Ge-VA binary compounds, and Ge-VIA binary compounds.The latest progress in predictive modeling, fabrication, and fundamental and physical property modulation of their stable 2D configurations are presented.Accordingly, various interesting applications of these Ge-based 2D materials are discussed, particularly field effect transistors, photodetectors, optical devices, catalysts, energy storage devices, solar cells, thermoelectric devices, sensors, biomedical materials, and spintronic devices. Finally, this review concludes with a few perspectives and an outlook for quickly expanding the application scope Ge-based 2D materials based on recent developments.

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Section: Germanene and Its Derivativesmentioning

confidence: 86%

Germanium‐based monoelemental and binary two‐dimensional materials: Theoretical and experimental investigations and promising applications

Zhao

Feng

2022

InfoMat

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“…Reduced density of domain boundaries was observed upon coalescence of the domains to form a WSe 2 monolayer film . The vdW epitaxy of MoS 2 on graphene has also been achieved by involving Mo evaporation on graphene and subsequent sulfurization under a H 2 S atmosphere. , …”

Section: Vapor-phase Synthesismentioning

confidence: 99%

“…480 The vdW epitaxy of MoS 2 on graphene has also been achieved by involving Mo evaporation on graphene and subsequent sulfurization under a H 2 S atmosphere. 511,512…”

Section: Epitaxial Growthmentioning

confidence: 99%

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

2023

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The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.

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“…[23] Furthermore, many physical properties of 2D materials are sensitive to careful interface engineering through the stacking of layers into homo-and heterostructures as well as the adjustment of the twist angle between adjacent layers. [24][25][26][27][28] To effectively study and work with 2D materials, the research field relies heavily on efficient methods of producing high-quality samples. The most significant challenges are posed by the strict requirements imposed on the sample crystallinity, atomic-level cleanliness of the interface, and sample size, which must be larger than the size of the (experimental) probe.…”

Section: Introductionmentioning

confidence: 99%

In Situ Exfoliation Method of Large‐Area 2D Materials

et al. 2023

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2D materials provide a rich platform to study novel physical phenomena arising from quantum confinement of charge carriers. Many of these phenomena are discovered by surface sensitive techniques, such as photoemission spectroscopy, that work in ultra-high vacuum (UHV). Success in experimental studies of 2D materials, however, inherently relies on producing adsorbate-free, large-area, high-quality samples. The method that yields 2D materials of highest quality is mechanical exfoliation from bulk-grown samples. However, as this technique is traditionally performed in a dedicated environment, the transfer of samples into vacuum requires surface cleaning that might diminish the quality of the samples. In this article, a simple method for in situ exfoliation directly in UHV is reported, which yields large-area, single-layered films. Multiple metallic and semiconducting transition metal dichalcogenides are exfoliated in situ onto Au, Ag, and Ge. The exfoliated flakes are found to be of sub-millimeter size with excellent crystallinity and purity, as supported by angle-resolved photoemission spectroscopy, atomic force microscopy, and low-energy electron diffraction. The approach is well-suited for air-sensitive 2D materials, enabling the study of a new suite of electronic properties. In addition, the exfoliation of surface alloys and the possibility of controlling the substrate-2D material twist angle is demonstrated.

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Direct growth of graphene-MoS2 heterostructure: Tailored interface for advanced devices

Cited by 19 publications

References 40 publications

Germanium‐based monoelemental and binary two‐dimensional materials: Theoretical and experimental investigations and promising applications

Germanium‐based monoelemental and binary two‐dimensional materials: Theoretical and experimental investigations and promising applications

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

In Situ Exfoliation Method of Large‐Area 2D Materials

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