Bismuth
oxyiodides have been gradually regarded as a kind of promising
optoelectronic material, owing to their various merits, like relatively
narrow and tunable band gap, high anisotropic crystal structure, and
less toxicity. However, the investigation of bismuth oxyiodide-based
photodetectors is still in the early stage, which might be attributed
to the immature film deposition techniques in controlling their phase
composition and surface morphology. In this work, high-quality Bi4O5I2 thin films were synthesized for
the first time by a facile solution-based deposition technique, mist
chemical vapor deposition. The synthesized Bi4O5I2 thin films were composed of vertically aligned nanoplatelets.
With the increasing synthesis temperatures, the size of the nanoplates
and film thickness increased. The iodide content was influenced by
the synthesis temperatures such that the I:Bi molar ratio for the
Bi4O5I2 thin films at intermediate
temperature was close to 50%. The Bi4O5I2 photoelectrochemical (PEC)-type photodetectors were fabricated
and exhibited excellent photodetection performance with the highest
responsivity of 19.4 mA/W and detectivity of 3.54 × 1010 Jones. In addition, Bi4O5I2 PEC-type
photodetectors presented good long-term stability in that the photocurrent
density only decreased by around 25% after 6 h, which was superior
to most 2D material-based PEC-type photodetectors. These results demonstrated
that the Bi4O5I2 thin film has great
potential in high-performance optoelectronic devices.