Scanning tunneling microscopF (STM) is a powerful tool for atomic resolution imaging of the topography of electronically conductive samples: Highly dispersed Pd is a preferred catalyst for electroless formaldehyde-driven Cu deposition on glass fiber reinforced epoxy printed circuit boards. Using surface oxidized highly oriented pyrolytic graphite (HOPG) as a model substrate, it was possible to obtain STM images of Pd clusters (typical size 1-5 nm). An electrochemical mechanism with separation of anode reaction (oxidation of formaldehyde on Pd) and cathode reaction (deposition of Cu on graphite) is proposed for electroless Cu plating.Electroless deposition of Cu from Cu2+/HCHO solutions onto nonconductive substrates and in particular onto printed circuit boards is of considerable technical importance. It requires catalytically active surfaces to initiate the Cu nucleation process. Activation can be performed by impregnation with solutions of Pd complexes and their subsequent chemical reduction (1). Factors like particle size, distribution, and anchorage of Pd clusters, of course, strongly affect quality and deposition rate of electroless Cu platings. Unfortunately, conventional imaging of these nuclei requires transition electron microscopy (TEM) techniques (2) since the resolution of scanning electron microscopy (SEM) is not sufficient. By the same token, STM has several important advantages over TEM: (i) higher resolution, (ii) most simple sample preparation, (iii) almost free choice of sample environment (e.g., air liquids), and (iv)