1993
DOI: 10.1103/physrevlett.71.1744
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Direct imaging of surface cusp evolution during strained-layer epitaxy and implications for strain relaxation

Abstract: We have directly imaged the evolution of surface cusps during strained-layer epitaxy. The cusps arise naturally as a result of gradients in the surface chemical potential. High stress concentrations at the cusp tip have important implications for strain relaxation in the film via dislocation nucleation.

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Cited by 254 publications
(73 citation statements)
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“…On the other hand, if the substrate is dislocation-free or has a very low density of dislocations, then fresh dislocations need to nucleate in the film, at the film/substrate interface, or at the film surface. In low-mismatched systems, including the cases of two-dimensional growth, a likely mechanism is dislocation nucleation at some heterogeneity in the film, usually at its surface (Matthews et al, 1970); this includes surface sites where contaminations (say, dirt particles or oxides/carbide precipitates) (Perovic et al, 1989) are present, and possibly at the valleys of surface undulations (Cullis et al, 1992(Cullis et al, , 1994Jesson et al, 1993Jesson et al, , 1994 caused by morphological instabilities (Grinfel'd, 1986). On the other hand, in large-mismatched systems, where film deposition is invariably by (two-or three-dimensional) island growth, dislocations often nucleate at the edges of the islands (Vincent, 1969).…”
Section: (4a)mentioning
confidence: 99%
“…On the other hand, if the substrate is dislocation-free or has a very low density of dislocations, then fresh dislocations need to nucleate in the film, at the film/substrate interface, or at the film surface. In low-mismatched systems, including the cases of two-dimensional growth, a likely mechanism is dislocation nucleation at some heterogeneity in the film, usually at its surface (Matthews et al, 1970); this includes surface sites where contaminations (say, dirt particles or oxides/carbide precipitates) (Perovic et al, 1989) are present, and possibly at the valleys of surface undulations (Cullis et al, 1992(Cullis et al, , 1994Jesson et al, 1993Jesson et al, , 1994 caused by morphological instabilities (Grinfel'd, 1986). On the other hand, in large-mismatched systems, where film deposition is invariably by (two-or three-dimensional) island growth, dislocations often nucleate at the edges of the islands (Vincent, 1969).…”
Section: (4a)mentioning
confidence: 99%
“…Further pathways to strain relaxation emerge when the constraint of perfectly coherent heterostructures is dropped. In this case, the formation of point-and particularly line-like defects of the lattice, as vacancies or interstitials and dislocations, can be very efficient ways of releasing the accumulated strain energy [47][48][49]. Here we shall however confine our discussion to the case of strict epitaxial coherence.…”
Section: Strain Relaxation In Heteroepitaxial Flat Layersmentioning
confidence: 97%
“…In experimental study of the nonlinear evolution of the stress-driven instability of thick films the formation of deep, cusp-like grooves was observed [12] [13]. In [14] this instability was studied numerically and they showed that the surface instability creates a groove that sharpens as it grows deeper.…”
Section: Introductionmentioning
confidence: 99%