“…On the other hand, if the substrate is dislocation-free or has a very low density of dislocations, then fresh dislocations need to nucleate in the film, at the film/substrate interface, or at the film surface. In low-mismatched systems, including the cases of two-dimensional growth, a likely mechanism is dislocation nucleation at some heterogeneity in the film, usually at its surface (Matthews et al, 1970); this includes surface sites where contaminations (say, dirt particles or oxides/carbide precipitates) (Perovic et al, 1989) are present, and possibly at the valleys of surface undulations (Cullis et al, 1992(Cullis et al, , 1994Jesson et al, 1993Jesson et al, , 1994 caused by morphological instabilities (Grinfel'd, 1986). On the other hand, in large-mismatched systems, where film deposition is invariably by (two-or three-dimensional) island growth, dislocations often nucleate at the edges of the islands (Vincent, 1969).…”