Direct imprinting of dielectric materials for dual damascene processing

Stewart, M. D.; Wetzel, J.; Schmid, Gerard M.; Palmieri, Frank L.; Thompson, Ecron; Kim, Eui Kyoon; Wang, David; Sotodeh, Ken; Jen, Kane; Johnson, Stephen C.; Hao, Jianjun; Dickey, Michael D.; Nishimura, Yukio; Laine, Richard M.; Resnick, Douglas J.; Willson, C. Grant

doi:10.1117/12.599977

Cited by 30 publications

(12 citation statements)

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“…A potential advantage of nanoimprint is the ability to directly deposit and pattern materials in one process, for example deposition of a low dielectric constant material such as an ILD [78,79]. This could result in significant process simplification.…”

Section: (C) Nanoimprintmentioning

confidence: 99%

Lithography for enabling advances in integrated circuits and devices

Garner

2012

Phil. Trans. R. Soc. A.

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Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing.

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Section: (C) Nanoimprintmentioning

confidence: 99%

Lithography for enabling advances in integrated circuits and devices

Garner

2012

Phil. Trans. R. Soc. A.

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“…[11][12][13][14] The sol-gel based material was synthesized by partial hydrolysis and condensation of a mixture of alkoxy-silane derivatives. Organosilicon resists have been reported that are based on sol-gel chemistry and on variously functionalized polyhedral oligomeric silsesquioxane (POSS) derivatives of the sort illustrated in Figs.…”

Section: Introductionmentioning

confidence: 99%

Ultraviolet curable branched siloxanes as low-k dielectrics for imprint lithography

Ogawa

Takei

Willson

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The effect of water uptake on the mechanical properties of low-k organosilicate glass Effect of UV wavelength on the hardening process of porogen-containing and porogen-free ultralow-k plasmaenhanced chemical vapor deposition dielectricsa)A methacrylate-based, UV curable branched siloxane (MA-Si-12) was designed for use as a low-k dielectric that can be directly patterned by step and flash imprint lithography. MA-Si-12 has the properties of low viscosity (20 cP) and low vapor pressure (1.3 Torr), which make the material suitable for imprint processes based on an inkjet dispensing system. However, the mechanical strength of UV cured MA-Si-12 is too low (0.4 GPa Young's modulus by nanoindentation) for use with chemical mechanical polishing. Therefore, a methacrylate-based, UV curable cyclic siloxane (8-ring) was synthesized to be blended with the siloxane and improve the modulus. A formulation consisting of a mixture of MA-Si-12 and 8-ring (50 wt. % respectively) provides patterned structures with a modulus of 2.0 GPa. This formulation still has a viscosity (19 cP) and vapor pressure (1.3 Torr) low enough for inkjet dispensing. The UV cured resin has a dielectric constant of 2.8 at 1 MHz, low water absorption (0.7 wt. % after 24 h), and low UV cure shrinkage (5.6%). It provides high resolution, high fidelity imprint patterns. Mixing or blending of branched and cyclic siloxanes is a valuable approach to the design of imprint resist formulations with low dielectric constants.

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“…In case the residual layer has been removed a conventional 2-level photoresist mask results from the hybrid lithography, whereas when the residual layer has not been removed a 3-level photoresist pattern is obtained. Potentially, such 3-level patterns could be either transferred to the substrate or directly used as a working stamp to obtain a 3-level pattern as it is used for a simultaneous definition of contact holes and wiring layer within a damascene process 13,14 .…”

Section: Introductionmentioning

confidence: 99%

Strategies for hybrid techniques of UV lithography and thermal nanoimprint

et al. 2008

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This paper discusses a hybrid process of thermal nanoimprint and UV lithography, carried out within UV curable SU-8 and mr-L 6000.5, respectively, on the basis of experiments and calculations of the light intensity distribution within the photoresist. For the non-transparent Si stamps with mixed pattern sizes, ranging from approx. 100nm to 150µm, the experiments revealed an optimum imprint temperature of 80°C for SU-8 and 70°C to 100°C for mr-L 6000.5. UV stabilization of the imprinted patterns after stamp removal is possible with negligible loss of the patterns when a broadband UV exposure is applied and the post exposure bake is performed as a temperature ramp, starting in the range of the glass transition temperature of the photoresists. UV stabilized patterns of mr-L 6000.5 can be replicated themselves (working-stamp), after applying a conventional anti-adhesive coating. A successful hybrid lithography of thermal nanoimprint lithography and UV lithography depends on the exposure conditions as well as on the layout of the stamp patterns with respect to the photomask pattern. Superimposing the patterns of a photomask is only uncritical for imprinted patterns in the range of the exposure wavelength and larger, where a trench may develop underneath the edges of imprinted patterns of ≥1µm width. This is due to a shadowing effect caused by exposure over topography. A sufficient stabilization of smaller imprinted patterns in the range of 100nm within a hybrid lithography approach is only feasible when the photomask patterns are not in direct vicinity of the pre-patterned photoresist.

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Direct imprinting of dielectric materials for dual damascene processing

Cited by 30 publications

References 0 publications

Lithography for enabling advances in integrated circuits and devices

Lithography for enabling advances in integrated circuits and devices

Ultraviolet curable branched siloxanes as low-k dielectrics for imprint lithography

Strategies for hybrid techniques of UV lithography and thermal nanoimprint

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