Direct Low-Temperature Nanographene CVD Synthesis over a Dielectric Insulator

Rümmeli, Mark H.; Bachmatiuk, Alicja; Scott, A. J.; Börrnert, Felix; Warner, Jamie H.; Hoffman, V.; Lin, Jarrn-Horng; Cuniberti, Gianaurelio; Büchner, B.

doi:10.1021/nn100971s

Cited by 329 publications

(248 citation statements)

References 20 publications

Supporting

Mentioning

231

Contrasting

Unclassified

Order By: Relevance

“…Ceramic catalyst25, 31, 53, 74 was proposed as a metal‐free alternative. One of the most promising candidates is γ‐Al 2 O 3 due to its insulating properties, lower adhesion energy to graphene, and reusability as a catalyst 75, 76.…”

Section: Catalyst‐free Direct Cvd Growth Of Graphene On Technologicalmentioning

confidence: 99%

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

et al. 2018

View full text Add to dashboard Cite

To fabricate graphene based electronic and optoelectronic devices, it is highly desirable to develop a variety of metal‐catalyst free chemical vapor deposition (CVD) techniques for direct synthesis of graphene on dielectric and semiconducting substrates. This will help to avoid metallic impurities, high costs, time consuming processes, and defect‐inducing graphene transfer processes. Direct CVD growth of graphene on dielectric substrates is usually difficult to accomplish due to their low surface energy. However, a low‐temperature plasma enhanced CVD technique could help to solve this problem. Here, the recent progress of metal‐catalyst free direct CVD growth of graphene on technologically important dielectric (SiO2, ZrO2, HfO2, h‐BN, Al2O3, Si3N4, quartz, MgO, SrTiO3, TiO2, etc.) and semiconducting (Si, Ge, GaN, and SiC) substrates is reviewed. High and low temperature direct CVD growth of graphene on these substrates including growth mechanism and morphology is discussed. Detailed discussions are also presented for Si and Ge substrates, which are necessary for next generation graphene/Si/Ge based hybrid electronic devices. Finally, the technology development of the metal‐catalyst free direct CVD growth of graphene on these substrates is concluded, with future outlooks.

show abstract

Section: Catalyst‐free Direct Cvd Growth Of Graphene On Technologicalmentioning

confidence: 99%

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

et al. 2018

View full text Add to dashboard Cite

show abstract

“…Semiconductors and metal oxides have been reported as the catalysts for the growth of CNTs,44, 45, 46 indicating their possibility as substrates for the growth of graphene. Several reports have shown that graphene‐like films can be synthesized on Si, SiN, Al 2 O 3 , SiO 2 , and MgO 47, 48, 49. However, graphene‐like films grown by these methods normally suffer from poor crystalline quality and coexisting amorphous carbon.…”

Section: Plasma‐enhanced Growth Of 2d Graphenementioning

confidence: 99%

Controllable Synthesis of Graphene by Plasma‐Enhanced Chemical Vapor Deposition and Its Related Applications

et al. 2016

View full text Add to dashboard Cite

Graphene and its derivatives hold a great promise for widespread applications such as field‐effect transistors, photovoltaic devices, supercapacitors, and sensors due to excellent properties as well as its atomically thin, transparent, and flexible structure. In order to realize the practical applications, graphene needs to be synthesized in a low‐cost, scalable, and controllable manner. Plasma‐enhanced chemical vapor deposition (PECVD) is a low‐temperature, controllable, and catalyst‐free synthesis method suitable for graphene growth and has recently received more attentions. This review summarizes recent advances in the PECVD growth of graphene on different substrates, discusses the growth mechanism and its related applications. Furthermore, the challenges and future development in this field are also discussed.

show abstract

“…3 Nevertheless, the necessity of etching the metal catalyst and transfer of graphene to foreign substrates hampers wide industrialization. Thus, efforts are put into the metal-free growth of graphene on materials including SiO 2 , 4-6 Al 2 O 3 , 7 MgO, 8 etc. To date, however, the graphitization process on dielectrics is poorly understood while the experiments are largely experience based.…”

mentioning

confidence: 99%

Noncatalytic chemical vapor deposition of graphene on high-temperature substrates for transparent electrodes

Sun

Cole

Lindvall

et al. 2012

Applied Physics Letters

View full text Add to dashboard Cite

A noncatalytic chemical vapor deposition mechanism is proposed, where high precursor concentration, long deposition time, high temperature, and flat substrate are needed to grow large-area nanocrystalline graphene using hydrocarbon pyrolysis. The graphene is scalable, uniform, and with controlled thickness. It can be deposited on virtually any nonmetallic substrate that withstands ∼1000 o C. For typical examples, graphene grown directly on quartz and sapphire shows transmittance and conductivity similar to exfoliated or metalcatalyzed graphene, as evidenced by transmission spectroscopy and transport measurements. Raman spectroscopy confirms the sp 2 -C structure. The model and results demonstrate a promising transfer-free technique for transparent electrode production.Graphene, a monolayer of sp 2 carbon atoms, has received much attention. The use of graphene in transparent electronics is one of its most promising applications. 1 Apart from its high transparency/conductivity, the flexibility and ease of integration on a variety of substrates are obvious advantages. 30-inch graphene has been demonstrated by virtue of the recent advances in chemical vapor deposition (CVD), 2 which is compatible with the existing semiconductor technology. 3 Nevertheless, the necessity of etching the metal catalyst and transfer of graphene to foreign substrates hampers wide industrialization. Thus, efforts are put into the metal-free growth of graphene on materials including SiO 2 , 4-6 Al 2 O 3 , 7 MgO, 8 etc. To date, however, the graphitization process on dielectrics is poorly understood while the experiments are largely experience based. Recently, we have shown that large-area uniform graphene can be grown on virtually any hightemperature substrates, on Si 3 N 4 or HfO 2 , for instance. 9 In this letter, we provide a broader and deeper insight, discussing in detail the growth mechanism of graphene directly on insulators. As an example, we show our results on graphene on quartz and sapphire, hinting at the future prospects of the transfer-free graphene for transparent electrodes.Bulk graphite is usually made at >3000 o C and catalysis is needed to lower the temperature. 10 However, nanoscale graphene flakes form without any catalysts at merely ∼1000 o C. For example, carbon black which is produced massively by natural gas pyrolysis 11-14 is nothing else but chaotically connected graphene flakes. 11 Although widely used in industry, this process has so far been overlooked for making large-area graphene. Here, we show that macroscopically amorphous carbon black can be turned into textured graphene thin films when a) Electronic mail: jiesu@chalmers.se. the carbon precursor concentration and growth temperature are high, also requiring a relatively long deposition time and flat substrate. Fig. 1(a) illustrates the CVD reactor used in this work. The middle region is heated to 1000 o C while the left and right sides are <600 o C. There is no material deposition in the right zone because of the reduced CH 4 decomposition efficiency at lo...

show abstract

Direct Low-Temperature Nanographene CVD Synthesis over a Dielectric Insulator

Cited by 329 publications

References 20 publications

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

Controllable Synthesis of Graphene by Plasma‐Enhanced Chemical Vapor Deposition and Its Related Applications

Noncatalytic chemical vapor deposition of graphene on high-temperature substrates for transparent electrodes

Contact Info

Product

Resources

About