Direct measurement of facet temperature up to melting point and cod in high-power 980-nm semiconductor diode lasers

Sweeney, S. J.; Lyons, Lance J.; Adams, A.R.; Lock, D.

doi:10.1109/jstqe.2003.820912

Cited by 27 publications

(12 citation statements)

References 22 publications

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“…4a illustrate the need to separate contributions to T bulk from those related to ΔT , e. g., by additional test in pulsed operation. Experimentally, T crit is estimated from facet temperature measurements just before COD [13,75] as will be discussed in Sect. 3.…”

Section: Cod Threshold In Cw Operationmentioning

confidence: 99%

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Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Tomm

Ziegler

Hempel

et al. 2011

Laser & Photonics Reviews

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Semiconductor lasers are the most efficient manmade narrow-band light sources and convert up to threequarters of electric energy into light. High-power diode lasers are characterized by very high internal power densities in their small cavity, resulting in local heating and sometimes device degradation. Catastrophic optical damage (COD) of diode lasers is a relevant degradation mechanism and limit for reaching ultrahigh optical powers. An overview is given on research activities targeting the mechanisms being relevant for the COD process in GaAs-based diode lasers emitting in the 630-1100 nm range. The discussion of experiments, where COD is artificially provoked, represents the main topic. The sequence of events and fast kinetics taking place on a nanosecond to microsecond time scale are addressed. A particular emphasis is laid on recent experimental work performed in the authors' laboratories. Paving the way for knowledge-based solutions towards more robust diode lasers represents the ultimate goal of this work. COD diagram determined for a batch of broad-area AlGaAs diode lasers. The time to COD within a single current pulse is plotted versus the actual average optical power in the moment when the COD takes place. Full circles stand for clearly identified COD events (right ordinate), whereas open circles (left ordinate) represent the pulse duration in experiments, where no COD has been detected. A borderline (gray) exists between two regions, i. e., parameter sets, of presence (orange) and absence of COD (blue). This borderline is somewhat blurred because of the randomness in filamentation of the laser nearfield and scatter in properties of the involved individual devices.

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Section: Cod Threshold In Cw Operationmentioning

confidence: 99%

“…Moreover, Sweeney et al [75] analyzed the high energy tails of the device emission. Assuming them to be caused by spontaneous emission from QW and waveguide, effective carrier temperatures were derived.…”

Section: Further Approaches For Facet Temperature Analysismentioning

confidence: 99%

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Tomm

Ziegler

Hempel

et al. 2011

Laser & Photonics Reviews

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“…Among potential applications, the eutectic 80Au/20Sn solder alloy is particularly attractive for use in high power electronics and optoelectronics as a hermetic sealing and die attachment material due to its excellent high temperature performance, mechanical strength, electrical and thermal conductivity, and ability for fluxless soldering [4][5][6][7][8][9][10]. The manufacturing process for such applications has been investigated extensively, with emphasis on the bonding quality, metallurgical interactions, and formation of a Au-Sn solder bump [11][12][13][14][15]. Rodriguez et al [3] studied the thermal stability of Au-Sn bonding for high temperature applications.…”

Section: Introductionmentioning

confidence: 99%

Low cycle fatigue behavior of a eutectic 80Au/20Sn solder alloy

Jing

Zhang

et al. 2015

International Journal of Fatigue

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“…In order to ensure the stability and reliability of LDM, it is very important to set and maintain a stable temperature. Therefore, heat transfer analysis and thermal control of the LDM are very need.Heat generation and dissipation in LD packages without TEC have been investigated both analytically and experimentally [1][2][3][4] . However, the thermal analysis of LDM incorporated with a TEC has not yet been sufficiently investigated.…”

mentioning

confidence: 99%

“…Heat generation and dissipation in LD packages without TEC have been investigated both analytically and experimentally [1][2][3][4] . However, the thermal analysis of LDM incorporated with a TEC has not yet been sufficiently investigated.…”

mentioning

confidence: 99%

Numerical analysis on heat transfer of laser diode module by equivalent electrical network method

Yang

Zhou

2008

Optoelectron. Lett.

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Because it is complex and inconvenient to use the common temperature field calculating method and experiment method, for analyzing heat transfer properties of laser diode module (LDM), an equivalent electrical network method is presented in this paper. Simulation results show that the temperature stability is closely related to ambient temperature, heat sink, LDM current and TEC current. Ambient temperature and TEC controller are the dominant terms effecting on temperature control in practice.Currently high-performance LDs are produced and packaged mostly as laser diode module (LDM). In order to ensure the stability and reliability of LDM, it is very important to set and maintain a stable temperature. Therefore, heat transfer analysis and thermal control of the LDM are very need.Heat generation and dissipation in LD packages without TEC have been investigated both analytically and experimentally [1][2][3][4] . However, the thermal analysis of LDM incorporated with a TEC has not yet been sufficiently investigated. The heat transfer analysis of a LDM is complicated considering the factors of conduction through the submount, natural convection to the gas, cooling characteristic of the TEC, thermal contact resistance with the package, performance of the heat sink, and so on. In addition, the material thermal property, the location of components and the pressure of the inert gas make the analysis more difficult.The finite element method to analyze a LDM has been presented in ref [5][6][7]. But the numerical method for analyzing heat transfer characteristics of LDM suffers from a great limitation. Due to the fact that TEC's performance does not obey standard rules of conduction, the solution how to add TEC in model becomes a key issue. At the same time, the method is complex because many parameters of LDM is needed. In this paper, a new equivalent electrical network method to analyze the characteristics of a LDM is presented.The LDM is divided into six lumped thermal control nodes: LD chip, chip carrier, submount, TEC, package and Fig.1 Block diagram of a typical LDMFor easy of analysing,we suppose that (a) the heat sources will be concentrated in the active region of LD chip ;(b) the thermal conductivity and heat capacity of materials maintain a constant value, with no temperature change.When the current I t f I flows through the LD, the Joule heat f generated by this current will be Q LD and its temperature will be T j T T . The heat transfer path begins from the junction, to the chip, carrier and submount to TEC top side. The rates of heat transfer from the controlled side of TEC (Q c ) and from the uncontrolled side (Q u ) may be determined by surface energy balances. As also, TEC pump heat comes from the top side at the temperature of T cs and goes to another side at the temperature of T us . Finally, all heat will pass the package resistance R pac , heat sink resistance R ha . So the following equation (1) could be obtaned: * heat sink.A typical LDM is shown in Fig.1. For the confined space of LDM under normal wo...

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Direct measurement of facet temperature up to melting point and cod in high-power 980-nm semiconductor diode lasers

Cited by 27 publications

References 22 publications

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Low cycle fatigue behavior of a eutectic 80Au/20Sn solder alloy

Numerical analysis on heat transfer of laser diode module by equivalent electrical network method

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