Direct Measurement of Interface Strength between Copper Submicron-Dot and Silicon Dioxide Substrate

Abstract

We develop an experimental evaluation method of interface strength for ductile submicron-dots on a hard substrate without collapse of the dot. The validity is examined by a copper (Cu) submicron-dot on a silicon dioxide (SiO 2 ) substrate with the rigid-layer of tungsten (W), which restrains the deformation and decreases the influence of complicated stress field due to the contact of tip. The diamond tip is dragged horizontally along the SiO 2 surface and the load is applied to the side edge of the W layer at a constant displacement rate using a modified atomic force microscopy. Both the lateral and the vertical load and displacement are continuously monitored during the test. The lateral load, F l , increases almost in proportion to the lateral displacement, δ l , and the Cu dot with the W layer is clearly separated from the SiO 2 along the interface. The restraint by the W layer works well so that there are little damages in both the delaminated W/Cu dot and the substrate. The delamination lateral load, F lC , is successfully measured.

Interfacial properties of Cu/SiO2 using a multiscale modelling approach in electronic packages

“…In this loading process, the maximum lateral force is ~30μN at lateral displacement of~2.8 nm, as shown in Fig. 8(b), which is in good consistent with the experimental result [8]. Furthermore, the FE model is used to calculate the normal interface strength of Cu/SiO2 system, as shown in Fig.…”

“…Those interface layers are modeled by cohesive zone element [7]. After we obtain the overall interface traction-separation constitutive relation, the obtained results can be directly employed to simulate the interfacial delamination test of the Cu/SiO2 system [8], as is illustrated in Fig.6. According to the geometric and loading configurations of this experiment test [7], the FE model is built, a columnar Cu dot of 50 nm height and 300 nm across on a SiO2 substrate with a rigid-layer W of 50 nm, and he 4-node axisymmetric elements, CAX4 and COHAX4, are used for the substructures and interfaces respectively.…”

Design of Ceramic Materials with Strong Adhesion to B-DNA with an Efficient Materials Informatics Technology

“…To confirm the effectiveness of the molecular dynamics simulation technique described in Chapters 2 and 3, the author conducted a scratch test on the film-laminated structure with a scratch tester, CSR-02 made by Rhesca Co., Ltd., and compared the test results with the simulation results. Recently, more advanced methods for measuring adhesion strength have been proposed in a number of research papers 17)- 19) . However, these advanced methods were very difficult to apply to fairly strong interfaces such as the interface between B-DNA and ZrO2/CaO/HfO2.…”

Interfacial Failure Characterization of Electronic Packaging Component Using a Multiscale Modelling Approach

“…Those interface layers are modeled by cohesive zone element [7]. After we obtain the overall interface traction-separation constitutive relation, the obtained results can be directly employed to simulate the interfacial delamination test of the Cu/SiO 2 system [8], as is illustrated in Fig.5. According to the geometric and loading configurations of this experiment test [7], the FE model is built, a columnar Cu dot of 50 nm height and 300 nm across on a SiO 2 substrate with a rigid-layer W of 50 nm, the material parameters are list in Table.1 and he 4-node axisymmetric elements, CAX4 and COHAX4, are used for the substructures and interfaces respectively.…”