2020
DOI: 10.1039/d0ra05222a
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Direct measurement of K+ ion efflux from neuronal cells using a graphene-based ion sensitive field effect transistor

Abstract: A graphene-based ISFET has been developed and demonstrated high sensitivity and direct measurement of K+ ion efflux from live cells.

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Cited by 14 publications
(11 citation statements)
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“…This lays the foundation for further monitoring physiological activities of neuronal signal transduction, cell secretion, and large-area live-cell analysis. [145] Ghazal Nabovati et al proposed a multiplexed biosensor based on the 8 × 8 ISFET arrays for simultaneous measurement of extracellular pH and cell growth rate with a single chip, achieving highly efficient detections (Figure 9d). [146] Yu Jiang et al produced 512 × 576 ISFET arrays on a 5 × 5 mm chip to realize distributed detection of E. coli and the detection time is shortened six times.…”
Section: Cell-related Detectionmentioning
confidence: 99%
“…This lays the foundation for further monitoring physiological activities of neuronal signal transduction, cell secretion, and large-area live-cell analysis. [145] Ghazal Nabovati et al proposed a multiplexed biosensor based on the 8 × 8 ISFET arrays for simultaneous measurement of extracellular pH and cell growth rate with a single chip, achieving highly efficient detections (Figure 9d). [146] Yu Jiang et al produced 512 × 576 ISFET arrays on a 5 × 5 mm chip to realize distributed detection of E. coli and the detection time is shortened six times.…”
Section: Cell-related Detectionmentioning
confidence: 99%
“…In DGISFETs, the sensitivity is enhanced by tuning the capacitance between the bottom gate (BG) dielectric and the top gate (TG) dielectric without the need for an external amplification circuit. DGISFETs with silicon-on-insulator (SOI) and polycrystalline silicon (poly-Si) reported higher sensitivities than single gate ion-sensitive field-effect transistors (ISFETs), but the fabrication process of such DGISFETs requires high processing temperatures. On the other hand, indium gallium zinc oxide (IGZO) has attracted attention as a semiconductor material for DGISFETs on account of its amorphous nature, room-temperature processing, and superior electrical performance (good subthreshold swing (SS), I ON / I OFF ratio, threshold voltage ( V TH ), and mobility). The sensing performance of a-IGZO-based DGISFETs depends on the material properties of the TG dielectrics and BG dielectrics.…”
Section: Introductionmentioning
confidence: 99%
“…The ion concentrations in the lemnoideae lema-containing tank were monitored for 3 weeks, revealing a 70–80% drop due to nutrient consumption by the aquatic plant (Figure I,J). Another IS-GFET was installed to monitor the outflow of K + ions from living neural cells . After 2 min of stabilization, the IS-GFET was tested in a glass coverslip (25 nm diameter) containing cultivated U252 human glioma cells, and the K + efflux process from the live cells was measured.…”
Section: Gfet Biosensors For Metal Ion Detectionmentioning
confidence: 99%
“…Another IS-GFET was installed to monitor the outflow of K + ions from living neural cells. 218 After 2 min of stabilization, the IS-GFET was tested in a glass coverslip (25 nm diameter) containing cultivated U252 human glioma cells, and the K + efflux process from the live cells was measured. The IS-GFET array containing 25 devices was capable of multiplexed detection of K + ions in live cells.…”
Section: ■ Gfet Biosensors For Metal Ion Detectionmentioning
confidence: 99%