Direct measurement of “ready-made” cations in a Ge2Sb3.4Te6.2 film

Imanishi, Yusuke; Nakaoka, Toshihiro

doi:10.1007/s10853-019-03405-y

Cited by 4 publications

(4 citation statements)

References 31 publications

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“…Second, the model predicts a reduction of the capacitance when an external electric field is applied, by a process in which the electric field detraps the electrons trapped in the point defects and recharges the neutralized point defects. Such a reduced capacitance by applying an external electric field was reported in an amorphous Ag-doped Ge 17 Te 83 , which exhibited a similar capacitive impedance to our Ag-GeTe [28]. Because of the existence of intrinsic charged defects, the pre-irradiation value of C p is lower than the ideal defect-free value.…”

Section: Mechanism Of Fast Variationsupporting

confidence: 81%

“…Figure 2a shows the I-V characteristics without γ-ray irradiation. The sweep rate-dependent peaks around ±0.5-1.0 V arise from the redox reaction, indicating that the system allows ionic conduction of Ag and involves a repetitive faradaic electrode reaction [28]. We employed the in-situ AC impedance measurement on the device using a sinusoidal input voltage restricted to 0.3 V to focus on the resistance of the electronic contribution rather than that of the ionic contribution.…”

Section: Reversible Impedance Variationmentioning

confidence: 99%

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Reversible and irreversible resistance changes for gamma-ray irradiation in silver-diffused germanium telluride

et al. 2020

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We report on the irreversible and reversible resistance changes for γ-ray irradiation in amorphous GeTe thin films with Ag electrodes. The γ-ray irradiation at a dose of 1 kGy irreversibly decreased the DC resistance by two orders of magnitude. The irreversible resistance change was caused by the formation of a conductive region that consisted of Ag-Te compounds. In-situ real-time DC resistance and AC impedance measurements revealed reversible variations in several electrode structures with DC resistances ranging widely from about 10 kΩ to about 5 MΩ. The DC resistance decreased by 2-5% with a time constant of about 3-7 min following the γ-ray irradiation with a dose rate of 0.5-2 kGy/h, and recovered on interruption. The AC impedance measurement was analyzed with a simple equivalent circuit consisting of a parallel RC circuit of the Ag-diffused GeTe matrix, connected serially to the interface resistance. The interface resistance and the capacitance of the matrix exhibited a fast reversible variation, which is explained by trapping and detrapping of carriers in the charged defects formed by the Ag re-diffusion. The resistance of the matrix showed a slow reversible variation with a time constant of 7 min, similar to the DC resistance. The slow reversible variation is attributed to the growth and dissolution of the conductive region caused by the Ag re-diffusion.

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Section: Mechanism Of Fast Variationsupporting

confidence: 81%

Section: Reversible Impedance Variationmentioning

confidence: 99%

Reversible and irreversible resistance changes for gamma-ray irradiation in silver-diffused germanium telluride

et al. 2020

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“…Both the LRS and HRS resistances decreased at relatively low RF frequencies below 100 MHz. The main currents in HRS arise from the electronic current in amorphous Ge 2 Sb 3.4 Te 6.2 including electron hopping [30] and the Faradaic current of Ag ions [26]. The RF-induced decrease of HRS resistance is attributed to an increase in the Faradaic current due to RFenhanced Ag ion migration.…”

Section: Mechanism Of Rf-induced Cbram Characteristic Modificationmentioning

confidence: 99%

“…This study is the first to show that the conductance modulation by RF waves intrinsically depends on the filament shape. [26] although in other chalcogenides like GeTe with dendritic filaments precursor filament growth prevents reproducible Faraday current observation. In this study, we demonstrate significantly different RF-induced CBRAM modurations between Ag-Ge 2 Sb 3.4 Te 6.2 with sheet-like filaments and Ag-GeTe with dendritic filaments, despite similar basic CBRAM properties like the SET/RESET voltages and the resistances of low and high resistance states (LRS/HRS).…”

Section: Introductionmentioning

confidence: 97%

RF-wave induced CBRAM characteristic modulation specific to sheet-like conductive filaments

Yin,

Tsukamoto,

Hayashi

et al. 2023

Mater. Res. Express

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The shape of conductive filaments in CBRAM is important for resistance switching and conductance modulation, especially in applications like neuromorphic and reservoir computing that use conductance as weight. We report on RF-induced modulation of CBRAM using Ge2Sb3.4Te6.2 with sheet-like filaments and compared it to those with dendritic filaments. RF input below 100 MHz reduced SET and RESET voltages, similar to CBRAM with dendritic filaments, but showed significantly different resistance changes. Repeated RF on/off input gradually increased the resistance of low-resistance state, unlike the dendritic filament CBRAM, where the resistance decreased. The increased resistance suggests RF-induced denser sheet-like filaments. Furthermore, the resistance of the high-resistance state showed a peculiar RF-induced resistance change not observed in dendritic filaments. The resistance decreased during RF input and increased to nine times the initial value when RF was switched off. The results show that the conductance modulation by RF input strongly depends on the filament type.

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Heterostructure of GeSe2−xSnx/n-Si solar cells: electronic properties and improvement of photoelectrical performance

Alharbi

Darwish

2019

Appl. Phys. A

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Direct measurement of “ready-made” cations in a Ge2Sb3.4Te6.2 film

Cited by 4 publications

References 31 publications

Reversible and irreversible resistance changes for gamma-ray irradiation in silver-diffused germanium telluride

Reversible and irreversible resistance changes for gamma-ray irradiation in silver-diffused germanium telluride

RF-wave induced CBRAM characteristic modulation specific to sheet-like conductive filaments

Heterostructure of GeSe2−xSnx/n-Si solar cells: electronic properties and improvement of photoelectrical performance

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