2005
DOI: 10.1016/j.jcrysgro.2005.04.024
|View full text |Cite
|
Sign up to set email alerts
|

Direct nitridation of molten Al(Mg,Si) alloy to AlN

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

0
11
0

Year Published

2011
2011
2024
2024

Publication Types

Select...
7
1

Relationship

0
8

Authors

Journals

citations
Cited by 19 publications
(14 citation statements)
references
References 25 publications
0
11
0
Order By: Relevance
“…Pressure and concentration at the bubble surface are coupled through Henry's law (Equation 11) and mass balance (Equation 12). He is Henry's constant, where R is the ideal gas constant, T is the temperature, and D is the diffusion coefficient of nitrogen in aluminum whose dependence on temperature is expressed by Equation 13.…”
Section: Bubble Radiusmentioning
confidence: 99%
See 1 more Smart Citation
“…Pressure and concentration at the bubble surface are coupled through Henry's law (Equation 11) and mass balance (Equation 12). He is Henry's constant, where R is the ideal gas constant, T is the temperature, and D is the diffusion coefficient of nitrogen in aluminum whose dependence on temperature is expressed by Equation 13.…”
Section: Bubble Radiusmentioning
confidence: 99%
“…Moreover, its high thermal conductivity, high electrical resistance, low dielectric constant, and a thermal expansion coefficient similar to that of silicon make it a good candidate for thermal management applications, as well as for coatings, insulators and optoelectronic devices. 9,13 It must be pointed out that AlN powder is relatively expensive, and thus a deterrent when considering AlN/Al for cost-effective applications. Thus, in-situ fabrication of AlN/Al composites by the reaction of a nitrogen-bearing gas with molten Al is an attractive manufacturing route.…”
mentioning
confidence: 99%
“…13 In a few studies, AlN was successfully formed at 1273 K by adding an alloying element such as Li, Mg, or Si to Al. [14][15][16] Using Li, the nitridation of Al alloys can be induced at 1073 K under certain conditions. 17 However, this route is not suitable for the production of high-purity AlN because the removal of the nitride of alloying elements from AlN is difficult.…”
Section: B Production Of Aln From Al Metalmentioning
confidence: 99%
“…Recently, P. Wu et al reported the AlN growth method using vaporized Al and nitrogen gas as source materials 10,11) . Some groups fabricated AlN by nitridation of metallic Al [12][13][14] . These techniques are simple, however, fabrication of high quality AlN bulk crystal have not been reported.…”
Section: Introductionmentioning
confidence: 99%