Direct Observation of a Bulklike Spin Moment at the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">F</mml:mi><mml:mi mathvariant="normal">e</mml:mi><mml:mo>/</mml:mo><mml:mi mathvariant="normal">G</mml:mi><mml:mi mathvariant="normal">a</mml:mi><mml:mi mathvariant="normal">A</mml:mi><mml:mi mathvariant="normal">s</mml:mi><mml:mo>(</mml:mo><mml:mn>100</mml:mn><mml:mo>)</mml:mo><mml:mtext mathvariant="normal">−</mml:mtext><mml:mn>4</mml:mn><mml:mo>×</mml:

Claydon, J. S.; Xu, Yongbing; Tselepi, M.; Bland, J. A. C.; Laan, G. van der

doi:10.1103/physrevlett.93.037206

Cited by 71 publications

(42 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…They find that the spin magnetic moment of the Co marker layer is highest in the center of the film, and drops at both the GaAs and vacuum interfaces. A large enhancement in the orbital magnetic moment is again found close to the interface with GaAs(001), as was found by Claydon et al 96 . As the films employed by both groups were deposited onto the GaAs(001)-(4×6) surface, the reason for the discrepancy in behaviour of the interfacial spin magnetic moment is unknown, and may again be related to a different behaviour of Co and Fe atomic species at the interface with GaAs(001).…”

Section: Ferromagnet/semiconductor Interface Magnetismsupporting

confidence: 72%

“…Indeed, for many years, suggestions were made that the interfacial magnetic dead-layer found in Fe/GaAs(001) structures may not, in-fact, be an intrinsic feature of the interface between Fe and GaAs(001). The first demonstration that it is possible for an Fe film to possess its full magnetic moment right up to the interface with GaAs(001) was provided by Claydon et al 96 using x-ray magnetic circular dichroism (XMCD) spectroscopy 97 . They deposited thin Fe films (0.25 -18 ML) where the thinnest films were buried below Co in order to remain ferromagnetic.…”

Section: Atomic Arrangement At the Ferromagnet/semiconductor Interfacementioning

confidence: 99%

See 1 more Smart Citation

Interface Magnetism in Ferromagnetic Metal–compound Semiconductor Hybrid Structures

Hindmarch

2011

SPIN

View full text Add to dashboard Cite

Interfaces between dissimilar materials present a wide range of fascinating physical phenomena. When a nanoscale thin-film of a ferromagnetic metal is deposited in intimate contact with a compound semiconductor, the properties of the interface exhibit a wealth of novel behavior, having immense potential for technological application, and being of great interest from the perspective of fundamental physics. This article presents a review of recent advances in the field of interface magnetism in (001)-oriented ferromagnetic metal/III–V compound semiconductor hybrid structures. Until relatively recently, the majority of research in this area continued to concentrate almost exclusively on the prototypical epitaxial Fe / GaAs (001) system: now, a significant proportion of work has branched out from this theme, including ferromagnetic metal alloys, and other III–V compound semiconductors. After a general overview of the topic, and a review of the more recent literature, we discuss recent results where advances have been made in our understanding of the physics underpinning magnetic anisotropy in these systems: tailoring the terms contributing to the angular-dependent free-energy density by employing novel fabrication methods and ferromagnetic metal electrodes.

show abstract

Section: Ferromagnet/semiconductor Interface Magnetismsupporting

confidence: 72%

Section: Atomic Arrangement At the Ferromagnet/semiconductor Interfacementioning

confidence: 99%

Interface Magnetism in Ferromagnetic Metal–compound Semiconductor Hybrid Structures

Hindmarch

2011

SPIN

View full text Add to dashboard Cite

show abstract

“…35 It is worth noting that not only the nanoscale full epitaxial Fe 3 O 4 /MgO (100) heterostructure exhibits considerably large m orb , its total moment (m total ) also retains ∼ 70% of the bulk value. The deviation of the magnetic moment of thin films from the bulk-like Fe 3 O 4 is usually attributed to three forms of missing compensation or symmetry breaking.…”

Section: Discussionmentioning

confidence: 99%

X-ray magnetic circular dichroism study of epitaxial magnetite ultrathin film on MgO(100)

Liu

Song

Maltby

et al. 2015

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Abstract:The spin and orbital magnetic moments of the Fe 3 O 4 epitaxial ultrathin film synthesized by plasma assisted simultaneous oxidization on MgO(100) have been studied with X-ray magnetic circular dichroism (XMCD). The ultrathin film retains a rather large total magnetic moment, i.e. (2.73±0.15)μ B /f.u., which is ~ 70% of that for the bulk-like Fe 3 O 4 . A significant unquenched orbital moment up to (0.54±0.05) μ B /f.u. was observed, which could come from the symmetry breaking at the Fe 3 O 4 /MgO interface. Such sizable orbital moment will add capacities to the Fe 3 O 4 -based spintronics devices in the magnetization reversal by the electric field.

show abstract

“…Based on the results of previous work, 10 the determination of the Curie temperature for a 53 nm film to be at 620 K and that of a bulk value to be at 694 K, 9 the Curie temperatures of Co 2 MnGa thin films are thought to be well in excess of 300 K when compared to M͑T͒ results for the similar alloy Co 2 MnSi. 22 Given this expectation, and our understanding of the behavior of full metallic films which demonstrate bulklike moments down to ϳ6.5 Å, 23 it is rather surprising that the measured quantities compare so differently. Furthermore, the ratio of the Mn to Co moment should not have a strong temperature dependence, and thus, it would be close to the theoretically predicted value of 5.8 if there is a large magnetic moment transfer from Co to Mn.…”

Section: Results and Analysismentioning

confidence: 99%

Element specific investigation of ultrathin Co2MnGa∕GaAs heterostructures

Claydon¹,

Hassan²,

Damsgaard³

et al. 2007

Journal of Applied Physics

View full text Add to dashboard Cite

We have used x-ray magnetic circular dichroism to study the element specific magnetic properties of ultrathin films of the Heusler alloy Co 2 MnGa at room temperature. Nine films were grown by molecular beam epitaxy on GaAs substrates and engineered to vary in stoichiometry as Co 1.86 Mn 0.99 Ga 1 , Co 1.95 Mn 0.98 Ga 1 , and Co 1.97 Mn 0.96 Ga 1 , with thicknesses of 5.3, 7.6, and 9.7 nm, and were capped with Al to prevent oxidization. Sum rule analysis revealed magnetic moments significantly lower than the values predicted theoretically, especially in the case of the Mn total magnetic moment. The results do not support the hypothesis that a large magnetic moment is transferred from Co to Mn, and may suggest that diffusion and reacted layers at ultrathin thicknesses can effect the establishment of a full Heusler structure.

show abstract

Direct Observation of a Bulklike Spin Moment at theFe/GaAs(100)−4×

Cited by 71 publications

References 32 publications

Interface Magnetism in Ferromagnetic Metal–compound Semiconductor Hybrid Structures

Interface Magnetism in Ferromagnetic Metal–compound Semiconductor Hybrid Structures

X-ray magnetic circular dichroism study of epitaxial magnetite ultrathin film on MgO(100)

Element specific investigation of ultrathin Co2MnGa∕GaAs heterostructures

Contact Info

Product

Resources

About