Direct Observation of Au Nanoclusters at Au/Si Interface and Enhanced SiO₂Growth Due to Catalytic Action by Au in Thermally Oxidized Au-Precipitated n-Type Si(001) Surfaces

Abstract

The behavior of Au nanoclusters at a Au/n-Si interface was investigated. In particular, SiO2 growth in thermally oxidized Au-precipitated n-type Si(001) surfaces was enhanced by the catalytic action of Au. When the Au-precipitated Si wafer was exposed to air for 30 d at room temperature (RT), a SiO2 film layer grew over Au nanoclusters on the Si surface. This is possibly because Si atoms may diffuse in an as-deposited Au layer and are oxidized in air at RT. In the case of oxidation at higher temperatures (850 °C for 30 min), Au nanoclusters were found to exist at the Au/n-Si interface. Moreover, the origin of protuberances observed by atomic force microscopy was found to be a bulge in the SiO2 film formed over the Au nanocluster, proving that the growth of the SiO2 film layer was enhanced by the catalytic action of Au.