Direct Observation of Domain Wall Scattering in Patterned<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow><mml:mi>Ni</mml:mi></mml:mrow><mml:mn>80</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mi>Fe</mml:mi></mml:mrow><mml:mn>20</mml:mn></mml:msub></mml:math>and Ni Nanowires by Current-Voltage Measurements

Lepadatu, Serban; Xu, Yongbing

doi:10.1103/physrevlett.92.127201

Cited by 78 publications

(44 citation statements)

References 22 publications

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“…8͑b͒ would naively lead to the interpretation that the DWR is negative. However, as has already been pointed out by other authors, 21,22 for a system with in-plane magnetization one has to take into account that contributions from the AMR play an important role. We thus checked the domain configuration by Monte Carlo simulations.…”

Section: -3mentioning

confidence: 99%

Reversal processes and domain wall pinning in polycrystalline Co-nanowires

et al. 2006

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The magnetization reversal process of single Co nanowires is investigated experimentally by magnetoresistance measurements at low temperatures. The results are compared to magnetic force micrographs of the remanent domain configuration. The theoretical expectation for the reversal process is obtained from Monte Carlo simulations. We find that both the width and the thickness of the wires as well as surface scattering play a significant role for the magnetization reversal processes. While thick ͑t Ͼ 15 nm͒ and narrow nanowires ͑w Ͻ 800 nm͒ switch by domain wall nucleation at the wire ends followed by wall motion, the magnetization reversal process in wide and/or thin nanowires is achieved by the generation of a multidomain state of the magnetization. It is shown both experimentally as well as theoretically that the wire width dependence of the coercive field can be used to pin a domain wall between two wire parts of different widths.

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Section: -3mentioning

confidence: 99%

Reversal processes and domain wall pinning in polycrystalline Co-nanowires

et al. 2006

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“…Experimental work on this subject includes studies on ferromagnetic thin films [2,3], nanowires [4][5][6][7][8], and wires with patterned pinning sites [9][10][11][12][13]. In addition to the early theoretical work [14,15], recent reformulations have been proposed, based on a microscopic approach [16][17][18][19].…”

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confidence: 99%

Dependence of Domain-Wall Depinning Threshold Current on Pinning Profile

et al. 2009

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“…Salah satu metode pengendalian DW yang paling layak yaitu menempatkan notch pada bahan magnetic nanowire [7][8][9][10][11][12].…”

Section: Pendahuluanunclassified

Amplitudo Osilasi Posisi Domain Wall Bahan Feromagnetik Nanowire Berkontriksi Segitiga Ketika Diberi Medan Luar Ac Dengan Amplitudo 2 Militesla

Nursiyanto

Soegijono

Djatmiko

2016

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AbstrakBanyak para peneliti menyoroti bahan feromagnetik bentuk nanowire dalam kaitan dengan aplikasi magnetic storage, sebagai penyimpan data berbasis magnet. Oleh karena itu, telah dilakukan pengamatan amplitudo osilasi domain wall (DW) pada bahan feromagnetik nanowire berukuran 2000 × 200 × 5 nm3 dengan kontriksi (notch) simetri berbentuk segitiga yang diberi medan magnet luar AC dengan amplitudo 2,0 mT dan variasi frekuensi dari 0,3 GHz sampai 2,0 GHz. Diperoleh data yang berasal dari operasi simulasi mikromagnetik dengan menggunakan perangkat lunak bernama "Object Oriented Micromagnetic Framework" (OOMMF) berdasarkan persamaan dinamika spin magnet Landau-Lifshitz-Gilbert (LLG). Hasil pengolahan data pengamatan memperlihatkan bahwa osilasi DW memiliki frekuensi yang sama dengan frekuensi medan magnet luar yang diberikan. Posisi DW untuk bahan Fe tidak mengalami pergeseran dan menghasilkan nilai amplitudo DW yang stabil. Sedangkan bahan Ni dan Co mengalami pergeseran dari posisi ekuilibrium yaitu ke arah sumbu xpositip dan nilai amplitudo DW semakin kecil dengan meningkatnya frekuensi medan luar.Kata-kata kunci: feromagnetik, nanowire, notch, osilasi, amplitudo. AbstractMany researchers interested to know about the nanowire ferromagnetic material for the application of magnetic storage as magnet-based data storage. Therefore, it has been observed amplitude of the domain wall oscillation in the nanowire ferromagnetic material by dimension of 2000 × 200 × 5 nm 3 have given the symmetrical triangular notch in the center. After that, external magnetic field with amplitude of 2.0 mT and variation of frequency from 0.3 GHz to 2.0 GHz given to the sample. The data get from micro magnetic simulation by using software called "Object Oriented Micro Magnetic Framework" (OOMMF) which it working based on magnetic spin dynamics equation of LandauLifshitz-Gilbert (LLG). The results showed that oscillations DW have same number with frequency of the external magnetic field. For Fe material, DW position does not shift from the position of equilibrium and produce amplitude of DW almost stable. While for the material Ni and Co, the result was different showed that position of DW have shifted to the x-axis positive and have amplitude tend smaller when the frequency of the external field increased.

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Direct Observation of Domain Wall Scattering in PatternedNi80Fe20and Ni Nanowires by Current-Voltage Measurements

Cited by 78 publications

References 22 publications

Reversal processes and domain wall pinning in polycrystalline Co-nanowires

Reversal processes and domain wall pinning in polycrystalline Co-nanowires

Dependence of Domain-Wall Depinning Threshold Current on Pinning Profile

Amplitudo Osilasi Posisi Domain Wall Bahan Feromagnetik Nanowire Berkontriksi Segitiga Ketika Diberi Medan Luar Ac Dengan Amplitudo 2 Militesla

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