Direct Observation of Doping Sites in Temperature‐Controlled, p‐Doped P3HT Thin Films by Conducting Atomic Force Microscopy

Duong, Duc T.; Phan, Hung; Hanifi, David; Jo, Pil Sung; Nguyen, Thuc‐Quyen; Salleo, Alberto

doi:10.1002/adma.201402015

Cited by 90 publications

(155 citation statements)

References 34 publications

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“…in agreement with what was observed by Pingel et al 24 We note here that Liang and Gregg 36 observed a higher mobile hole density (~10 -16 cm -3 ), which may be a result of a less pure and lower regioregular batch of P3HT. Nevertheless, these calculations give us a reasonable estimate of the residual charge density inside pure P3HT films.…”

Section: Measurement Of Background Charge Concentration In Nominsupporting

confidence: 82%

“…These changes in polaronic absorption and chromophore bleaching suggest that changing temperature can control the efficiency with which dopants generate a P3HT cation in solution, as was previously reported. 24 The absorption features in the UV-visible region are analyzed and used to identify charged species after doping. As shown in Fig.…”

Section: Doping In Solutionmentioning

confidence: 99%

“…This higher temperature ensures proper dissolution of the dopant-polymer complex and has been shown to not lead to volatilization of the F4TCNQ molecules. 24 To avoid spectral deformation in the absorption edge and subgap spectral region due to light scattering effects, absorption spectra were taken with an integrating sphere. The results are summarized in Fig.…”

Section: Doping In Thin Filmsmentioning

confidence: 99%

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Optical measurement of doping efficiency in poly(3-hexylthiophene) solutions and thin films

et al. 2015

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The doping mechanism of 2, 3,5,6-tetrafluoro-7,7,8,8,-tetracyanoquinodimethane (F4TCNQ) doped poly(3-hexylthiophene) (P3HT) thin films and solutions is studied by UV-visible and IR absorption spectral analysis. We show that integer charge transfer between the two molecules is observed in this system with 63% of the dopants producing a fully transferred charge in thin film. The primary P3HT doped species in solution and thin film are shown to be bipolarons and polarons, respectively. The absorption signatures of polarons and bipolarons are identified and their cross sections are measured, which can be used to evaluate the influence of processing conditions on the density of impurity dopant-induced polarons in nominally 'neat' P3HT films. PACS number(s): 81.05. Fb, 82.35.Cd

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Section: Measurement Of Background Charge Concentration In Nominsupporting

confidence: 82%

Section: Doping In Solutionmentioning

confidence: 99%

Section: Doping In Thin Filmsmentioning

confidence: 99%

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Optical measurement of doping efficiency in poly(3-hexylthiophene) solutions and thin films

et al. 2015

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“…decrease in σ and UV–vis anion signal28). Hence, for weakly and strongly doped P3HT, which we had deposited at 100 °C, we find a doping efficiency of ≈40% and ≈20%, respectively.…”

Section: Resultsmentioning

confidence: 99%

A Solution‐Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics

Kiefer

Fransson

et al. 2016

Advanced Science

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Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution‐doped conjugated polymer poly(3‐hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer‐thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free‐standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

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“…[25] Doping-induced change in morphology was also reported for solution processed polymer thin films, such as poly(3-hexylthiophene) (P3HT). Duong et al [26] directly visualized the dopant distribution in P3HT:F4-TCNQ blend films using conductive atomic force microscopy (C-AFM), and showed that both dopant distribution and film morphology depend on the strength of the doping process.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the High Electron Affinity Molecular Dopant F6‐TCNNQ for Hole‐Transport Materials

Zhang

Kahn

2017

Adv Funct Materials

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2,2′-(perfluoronaphthalene-2,6-diylidene)dimalononitrile (F6-TCNNQ) is investigated as a molecular p-type dopant in two hole-transport materials, 2,2′,7,7′-tetrakis(N,N-diphenylamino)-9,9-spirobifluorene (Spiro-TAD) and tris(4-carbazoyl-9-ylphenyl)amine (TCTA). The electron affinity of F6-TCNNQ is determined to be 5.60 eV, one of the strongest organic molecular oxidizing agents used to date in organic electronics. p-Doping is found to be effective in Spiro-TAD (ionization energy = 5.46 eV) but not in TCTA (ionization energy = 5.85 eV). Optical absorption measurements demonstrate that charge transfer is the predominant doping mechanism in Spiro-TAD:F6-TCNNQ. The hostdopant interaction also leads to a significant alteration of the host film morphology. Finally, transport measurements done on Spiro-TAD:F6-TCNNQ as a function of dopant concentration and temperature, and using a highly doped contact layer to ensure negligible hole injection barrier, lead to an accurate measurement of the film conductivity and hole-hopping activation energy.

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Direct Observation of Doping Sites in Temperature‐Controlled, p‐Doped P3HT Thin Films by Conducting Atomic Force Microscopy

Cited by 90 publications

References 34 publications

Optical measurement of doping efficiency in poly(3-hexylthiophene) solutions and thin films

Optical measurement of doping efficiency in poly(3-hexylthiophene) solutions and thin films

A Solution‐Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics

Investigation of the High Electron Affinity Molecular Dopant F6‐TCNNQ for Hole‐Transport Materials

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