Direct observation of electroluminescence properties on magnetoresistive switch effect in Au/GaAs junctions

Manago, Takashi; Sun, Zhigang; Tokizaki, T.; Akinaga, H.

doi:10.1016/j.jmmm.2006.10.854

Journal of Magnetism and Magnetic Materials

2007

DOI: 10.1016/j.jmmm.2006.10.854

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Direct observation of electroluminescence properties on magnetoresistive switch effect in Au/GaAs junctions

Takashi Manago

Zhigang Sun

T. Tokizaki

et al.

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“…[5][6][7] In inhomogeneous semiconductors with nonmagnetic metallic electrode, Au/ InSb, and Au/ GaAs heterostructures, magnetoresistive switch effect with a huge room-temperature MR had been observed in the device with an applied breakdown voltage. 10 The observation revealed that EL emission occurred at two places, around electrode gap and a place apart from the gap. 10 The observation revealed that EL emission occurred at two places, around electrode gap and a place apart from the gap.…”

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confidence: 98%

Huge magnetoresistive effects using space charge limited current in ZnO∕SiO2 system

Miyanishi¹,

Yagura²,

Teraguchi³

et al. 2007

Applied Physics Letters

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Articles you may be interested inInterfacial resistance and spin-dependent scattering in the current-perpendicular-to-plane giant magnetoresistance using Co2Fe(Al0.5Si0.5) Heusler alloy and Ag Magnetoresistance mobility extraction on Ti N ∕ Hf O 2 ∕ Si O 2 metal-oxide-semiconductor field effect transistors Appl. Phys. Lett. 90, 152111 (2007); 10.1063/1.2721363 Deposition of [Ni-Fe/Al-O/Co-Fe] films with tunneling magnetoresistance effect using the interfacial modulation techniqueHuge magnetoresistive effects were observed in a metal/insulator current-in-plane ͑CIP͒ diode feeding space charge limited ͑SCL͒ current. The insulator laterally toward opposite gold ͑Au͒ electrodes was fabricated on a SiO 2 substrate by the standard photolithography method using dry etching. The insulator consisted of a SiO 2 / ZnO / SiO 2 / ZnO multilayer sputtered on the substrate. Current-voltage curves showed Ohmic property and SCL current characteristics accompanied by Child-Langmuir and Mott-Gurney laws derived from first order differential calculus. Current-magnetic field curves indicated the huge magnetoresistive effects up to 10 10 % under the magnetic field of 0.3 T at room temperature. The current-magnetic field curves have even symmetry for the applied magnetic field. The Au/insulator CIP diode is abruptly switched between a conducting state and an insulating state by the applied magnetic field.

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mentioning

confidence: 98%

Huge magnetoresistive effects using space charge limited current in ZnO∕SiO2 system

Miyanishi¹,

Yagura²,

Teraguchi³

et al. 2007

Applied Physics Letters

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Direct observation of electroluminescence properties on magnetoresistive switch effect in Au/GaAs junctions

Cited by 1 publication

References 4 publications

Huge magnetoresistive effects using space charge limited current in ZnO∕SiO2 system

Huge magnetoresistive effects using space charge limited current in ZnO∕SiO2 system

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