Direct observation of formation of threading dislocations from stacking faults in GaN layer grown on (0001) sapphire

Origin of predominantly a type dislocations in InGaN layers and wells grown on (0001) GaN

“…AC þ Cr, in general, where Arð 1 3 ½ 1100Þ; Brð 1 3 ½0 110Þ, and Crð 1 3 ½10 10Þ are defined in standard hexagonal close-packed nomenclature. 21,22 AB or AC is a perfect a dislocation in basal plane that can later climb or glide out of basal planes and propagate as threading dislocations. Details regarding dislocation generation due to dissociation of Shockley partials can be found in Refs.…”

“…The generation of the a dislocations in InGaN layers and quantum wells was thus attributed to the dissociation of Shockley partials bounding the stacking faults, a model that we proposed for the generation of threading dislocations in GaN. 21,22 …”

Structural evolution of GaN layers grown on (0001) sapphire by hydride vapor phase epitaxy

“…Details on whether threading dislocations originate from coalescence boundaries can be found in Refs. [19,22,25,26,29,30]. Fig.…”

Experimental Study on Formation Characteristics and Laws of Dislocation and Stacking Fault during Cutting of Titanium Alloy

“…H. Wei and Y. Wei [13] investigated the impingement of a screw dislocation on intrinsic stacking fault (SF) and extrinsic stacking faults (ESF) in different FCC metals by using the molecular dynamics simulations, which were significant to further understand the details of plastic deformation and to seek the underlying techniques for strengthening metals; Dey et al [14] studied microstructure parameters of plastically deformed (hand filed) Cu-1Sn-Zn ternary alloys with zinc concentration 10-24 wt.% with X-ray diffraction line profile analysis; Nakai et al [15] investigated the grown-in defects in CZ-Si crystals grown at the rate of 0.4 mm/min by bright field IR laser interferometer and transmission electron microscopy (TEM). Their researches concluded that the stacking fault was formed by the agglomeration of self-interstitial atoms during crystal growth; Meng et al [16] reported direct observation of the formation of threading dislocations from stacking faults in GaN layers grown on (0 0 0 1) sapphire by hydride vapor phase epitaxy; Huang et al [17] studied the structural stability and generalized stacking fault energies of the {1 1 2} ⟨1 1 1⟩ and {1 1 0} ⟨1 1 1⟩ slip systems in Ti-Nb alloys with various valence electron numbers; Yang et al [18] carried out compression tests of Cu-2.2 wt% Al, Cu-4.5 wt% Al, and Cu-6.9 wt% Al with different stacking fault energy and investigated the effect of stacking fault energy upon Cu-Al alloys. Combining that with the existing work, although there are a lot of dislocation and stacking fault studies, research of dislocation and stacking fault during cutting of titanium alloy thin-walled part is rarely reported at the present.…”