Direct observation of laser-induced solid-phase epitaxial crystallization by time-resolved optical reflectivity

Olson, G. L.; Kokorowski, S. A.; McFarlane, R. A.; Hess, L. D.

doi:10.1063/1.91749

Cited by 98 publications

(6 citation statements)

References 12 publications

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“…The partitioning of Q N will also change to include the difference in barriers for motion, as shown in eq. (35). …”

Section: Appendix a Generalized Fermi-level Shifting Modelmentioning

confidence: 99%

“…The problems with this model are that it postulates defect levels that have not yet been found, and that the quantitative predictions of the model are sensitive to the postulated temperature-dependence of the energy level of the defect, as discussed in Appendix A. Eq. (35) does not predict a strictly Arrhenius form for N norm (T); hence accurate enough data for the temperature-dependence of v could in principle be used to distinguish between the FI and generalized FLS models. Additionally, attempts to fit N o from experiments in doped Ge might favor one model over the other, but only if one of the large number of fitting parameters were forced outside its plausible range.…”

Section: Doping Dependencementioning

confidence: 99%

“…The technique of in situ optical interferometry, or time-resolved reflectivity (TRR), developed by Olson et al 35 was used to monitor the moving c/a interface and then calculate the solid phase epitaxial growth rate in both Si and Ge. Alternating constructive and destructive interference signals of laser reflections from the free surface and the c/a interface are detected by a photodiode and recorded.…”

Section: Optical Interferometry Systemmentioning

confidence: 99%

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Pressure-enhanced crystallization kinetics of amorphous Si and Ge: Implications for point-defect mechanisms

Lü

Nygren

Aziz

1991

Journal of Applied Physics

153

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The effects of hydrostatic pressure on the solid-phase epitaxial growth (SPEG) rate v of intrinsic Ge(100) and undoped and doped Si(100) into their respective self-implanted amorphous phases are reported. Samples were annealed in a high-temperature, high-pressure diamond anvil cell. Cryogenically loaded fluid Ar, used as the pressure transmission medium, ensured a clean and hydrostatic environment. v was determined by in situ time-resolved visible (for Si) or infrared (for Ge) interferometry. v increased exponentially with pressure, characterized by a negative activation volume of −0.46Ω in Ge, where Ω is the atomic volume, and −0.28Ω in Si. The activation volume in Si is independent of both dopant concentration and dopant type. Structural relaxation of the amorphous phases has no significant effect on v. These and other results are inconsistent with all bulk point-defect mechanisms, but consistent with all interface point-defect mechanisms, proposed to date. A kinetic analysis of the Spaepen–Turnbull interfacial dangling bond mechanism is presented, assuming thermal generation of dangling bonds at ledges along the interface, independent migration of the dangling bonds along the ledges to reconstruct the network from the amorphous to the crystalline structure, and unimolecular annihilation kinetics at dangling bond ‘‘traps.’’ The model yields v = 2 sin(θ)vsnr exp[(ΔSf + ΔSm)/k] exp− [(ΔHf + ΔHm)/kT], where ΔSf and ΔHf are the standard entropy and enthalpy of formation of a pair of dangling bonds, ΔSm and ΔHm are the entropy and enthalpy of motion of a dangling bond at the interface, vs is the speed of sound, θ is the misorientation from {111}, and nr is the net number of hops made by a dangling bond before it is annihilated. It accounts semiquantitatively for the measured prefactor, orientation dependence, activation energy, and activation volume of v, and the pressure of a ‘‘free-energy catastrophe’’ beyond which the exponential pressure enhancement of SPEG cannot continue uninterrupted due to a vanishing barrier to dangling bond migration. The enhancement of v by doping can be accounted for by an increased number of charged dangling bonds, with no change in the number of neutrals, at the interface. Quantitative models for the doping dependence of v are critically reviewed. At low concentrations the data can be accounted for by either the fractional ionization or the generalized Fermi-level-shifting models; methods to further test these models are enumerated. Ion irradiation may affect v by altering the populatio

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“…The partitioning of Q N will also change to include the difference in barriers for motion, as shown in eq. (35). …”

Section: Appendix a Generalized Fermi-level Shifting Modelmentioning

confidence: 99%

Section: Doping Dependencementioning

confidence: 99%

Section: Optical Interferometry Systemmentioning

confidence: 99%

See 1 more Smart Citation

Pressure-enhanced crystallization kinetics of amorphous Si and Ge: Implications for point-defect mechanisms

Lü

Nygren

Aziz

1991

Journal of Applied Physics

153

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“…Surface coverages were determined from calibrated temperature programmed desorption (TPD) measurements [12] . Optical interference measurements [19,20] were used to calibrate the TPD signals.…”

Section: Methodsmentioning

confidence: 99%

Vibrational resonant desorption from surfaces using the infrared free-elctron laser

1990

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The IRFEL is a useful infrared light source that can be employed as a probe of vibrational dynamics on surfaces. This paper will discuss the application of the IRFEL to desorb adsorbates from surfaces by resonantly exciting their vibrational modes. This application is illustrated by recent investigations of the resonant desorption of butane from Al2O(1120) using the Mark III IRFEL. These resonant desorption studies revealed a greater desorption yield for the asymmetric C-H stretches in comparison with the symmetric C-H stretches. This greeter desorption efficiency for the asymmetric C-H stretches was attributed to the orientation of the butane molecules in an ordered adlayer on A1203 (1120).

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“…In the relation, the single preexponential factor v 0 and the single activation energy E a have clear physical meanings, respectively straightforward standing for the attempt frequency and the energy barrier for the atoms to jump from amorphous layer to crystalline layer at the planar transforming c/a interface. In addition, such an epitaxy, moving interface can be easily monitored in an in-situ and real time manner by a time-resolved optical reflectivity (TRR) technique as first developed by G. L Olson et al [4]. Therefore, SPEG potentially provides us a unique, sensitive tool to study kinetic transiting process for atoms in amorphous phase to rearrange in a layer by layer manner into single crystalline phase .…”

Section: Introductionmentioning

confidence: 97%

Kinetics of Solid Phase Epitaxy of Amorphous Si Induced by Self-ion Implantation into Si with Nanocavities

Zhu

2006

2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems

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The solid phase epitaxial regrowth of structurally modified amorphous silicon created by self-ion implantation into nanovoided crystalline silicon is investigated. It is demonstrated that although the modified amorphous silicon is fully reconstructed into single crystal during the epitaxial regrowth, both activation energy and atom attempt frequency for the regrowth are much higher than those of the typical amorphous Si induced by self-ion implantation into Si wafer without nanovoids. The novel regrowth kinetics indicates that the modified amorphous silicon would contain a very high concentration of dangling bonds, which are believed to result from dissociation of the nanovoids originally metastablized in crystalline silicon. The unparalleled sensitivity of SPEG provides an effective and simple way to detect and characterize the subtle structural changes at nanometer scale in amorphous Si.

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Direct observation of laser-induced solid-phase epitaxial crystallization by time-resolved optical reflectivity

Cited by 98 publications

References 12 publications

Pressure-enhanced crystallization kinetics of amorphous Si and Ge: Implications for point-defect mechanisms

Pressure-enhanced crystallization kinetics of amorphous Si and Ge: Implications for point-defect mechanisms

Vibrational resonant desorption from surfaces using the infrared free-elctron laser

Kinetics of Solid Phase Epitaxy of Amorphous Si Induced by Self-ion Implantation into Si with Nanocavities

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