Obtaining high-quality thin films of 5d transition metal oxides is essential to explore the exotic semimetallic and topological phases predicted to arise from the combination of strong electron correlations and spin-orbit coupling. Here, we show that the transport properties of SrIrO 3 thin films, grown by pulsed laser deposition, can be optimized by considering the effect of laser-induced modification of the SrIrO 3 target surface. We further demonstrate that bare SrIrO 3 thin films are subject to degradation in air and are highly sensitive to lithographic processing. A crystalline SrTiO 3 cap layer deposited in-situ is effective in preserving the film quality, allowing us to measure metallic transport behavior in films with thicknesses down to 4 unit cells. In addition, the SrTiO 3 encapsulation enables the fabrication of devices such as Hall bars without altering the film properties, allowing precise (magneto)transport measurements on micro-and nanoscale devices.The intriguing electronic structure of 5d transition metal oxides arises from the delicate interplay between competing energy scales. Iridium compounds display a particularly large spin-orbit coupling (SOC) of the order of 0.4 eV, which leads to the formation of novel J eff = 1/2 and J eff = 3/2 states 1 . The combination of this strong SOC and slight lattice distortions has recently drawn attention to SrIrO 3 as a promising candidate to realise topological (semi)metallic phases 2-6 . Perovskite SrIrO 3 is a member of the Pbnm space group, featuring two glide planes and a mirror plane which are crucial in determining its band structure 7,8 . At atmospheric pressure, SrIrO 3 crystallises in a 6H-hexagonal structure, while its perovskite form can be obtained by applying high pressure and temperature and subsequent quenching 9 . This requires particular care due to the high volatility of iridium oxides and competition with other phases such as Sr 2 IrO 4 and Sr 3 Ir 2 O 7 10 . These extreme conditions can be avoided by resorting to thin film growth, where epitaxial constraint can be used to synthesize perovskite SrIrO 3 films 8,[11][12][13][14][15][16][17][18][19] . SrIrO 3 films are generally grown by pulsed laser deposition (PLD), where a relatively high oxygen pressure (0.01 -1 mbar) is required to control the Ir oxidation state19 . In such high pressure conditions, the interaction dynamics between the expanding plume and the background gas are very complex 20 . This can readily result in slight deviations from the ideal film stoichiometry, which can strongly affect the electrical properties through the formation of crystal defects. Electrical transport measurements of SrIrO 3 films reported in literature show a rather large variability, which brings to question the role of disorder and secondary phase formation on a) Electronic mail: d.j.groenendijk@tudelft.nl the film properties [13][14][15]21,22 .In this Letter, we identify key issues related to the growth and stability of SrIrO 3 thin films and study how these affect their electrical properties. F...