Direct observation of two-dimensional growth at SiO2/Si(111) interface

Hojo, Daisuke; Tokuda, Norio; Yamabe, Kikuo

doi:10.1016/j.tsf.2007.05.011

Cited by 18 publications

(18 citation statements)

References 40 publications

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“…This result is consistent with prior measurements of Al 2 O 3 sputtered surfaces that have a finite roughness; the interfacial moisture concentration for polymers on this surface also goes through a maximum . Additionally, thermal oxide typically has been shown to not grow by a strictly layer-by-layer mechanism, thus a rough surface is expected …”

Section: Resultssupporting

confidence: 89%

On the Origins of Sudden Adhesion Loss at a Critical Relative Humidity: Examination of Bulk and Interfacial Contributions

et al. 2008

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The origins for abrupt adhesion loss at a critical relative humidity (RH) for polymeric adhesives bonded to inorganic surfaces have been explored using a model poly(methyl methacrylate) (PMMA) film on glass. The interfacial and bulk water concentrations within the polymer film as a function of D 2O partial pressure were quantified using neutron reflectivity. Adhesion strength of these PMMA/SiO 2 interfaces under the same conditions was quantified using a shaft loaded blister test. A drop in adhesion strength was observed at a critical RH, and at this same RH, a discontinuity in the bulk moisture concentration occurred. The moisture concentration near the interface was higher than that in the bulk PMMA, and at the critical RH, the breadth of the interfacial water concentration distribution as a function of distance from the SiO 2/PMMA interface increased dramatically. We propose a mechanism for loss of adhesion at a critical RH based upon the interplay between bulk swelling induced stress and weakening of the interfacial bond by moisture accumulation at the PMMA/SiO 2 interface.

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Section: Resultssupporting

confidence: 89%

On the Origins of Sudden Adhesion Loss at a Critical Relative Humidity: Examination of Bulk and Interfacial Contributions

et al. 2008

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“…In a previous study, we modeled the growth of silicon oxide on a silicon substrate using an algorithm that alternates between the inclusion of oxygen atoms according to empirical laws suggested by experimental results and ab initio calculations, 3,8,31 and atomic relaxations using molecular dynamics. 9 Although this method is convenient for generating a plausible SiO 2 /Si interface, the hand-based insertion of oxygen, even following empirical rules, can introduce unknown biases in the system.…”

Section: Oxygen Reaction With a Silicon Substratementioning

confidence: 99%

“…This compound is one of the most widely used as a gate material in devices. Yet, despite a large number of experimental studies on the formation of this SiO 2 oxide, there is still very little understanding regarding the details of its early stage of growth [1][2][3] In this context, it is essential to develop new predictive numerical atomic-scale tools for the relevant scale of future devices. Here, we focus on the study of the formation of silicon oxide on a silicon substrate using the ART NOUVEAU method, [4][5][6] a fast and efficient algorithm for the unbiased exploration of the energy landscape as oxygen atoms are deposited on the substrate.…”

Section: Introductionmentioning

confidence: 99%

“…The initial stages of silicon oxidation are characterized by a structural reorganization of the substrate as a transition from 2 × 1 to 1 × 1 Si surface structure as shown by low energy electron diffraction. 1 The oxygen coverage of the surface is temperature dependent as Langmuir-type adsorption is observed at 820 K, as well as two-dimensional island growth at 920 K. 2 Extensive layer-by-layer growth of SiO 2 oxide by successive oxidation of Si planes, followed by atomic force microscopy, 3 reveals that the oxidation starts with SiO 2 islands joining together in a two-dimensional spreading. The growth continues at the interface as oxygen atoms start diffusing through the oxide inducing a layer-by-layer inner formation of silicon oxide.…”

Section: Introductionmentioning

confidence: 99%

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First stages of silicon oxidation with the activation relaxation technique

2012

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International audienceUsing the ART NOUVEAU method, we study the initial stages of silicon oxide formation. After validating the method's parameters with the characterization of point defects diffusion mechanisms in pure Stillinger-Weber silicon, which allows us to recover some known results and to detail vacancy and self-interstitial diffusion paths, the method is applied onto a system composed of an oxygen layer deposited on a silicon substrate. We observe the oxygen atoms as they move rapidly into the substrate. From these ART NOUVEAU simulations, we extract the energy barriers of elementary mechanisms involving oxygen atoms and leading to the formation of an amorphouslike silicon oxide. We show that the kinetics of formation can be understood in terms of the energy barriers between various coordination environments

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“…4a. Several individual research groups (Frances Ross and Murray Gibson [46], NIMS [47], and others) have made initial attempts to increase the types of experiments that can be observed, primarily by statically increasing the pole piece gap to make room for additional instrumentation. In these early experiments, the cost in spatial resolution proved to be high, however, Eric A. Stach and others have shown that new aberration correction techniques can be used to increase the pole piece gap, while retaining angstrom resolution [22].…”

Section: Flexible In-situ Testing Chambermentioning

confidence: 99%

Possibility of an integrated transmission electron microscope: enabling complex in-situ experiments

Hattar

Jungjohann

2021

J Mater Sci

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Multimodal in-situ experiments are the wave of the future, as this approach will permit multispectral data collection and analysis during real-time nanoscale observation. In contrast, the evolution of technique development in the electron microscopy field has generally trended toward specialization and subsequent bifurcation into more and more niche instruments, creating a challenge for reintegration and backward compatibility for in-situ experiments on state-of-the-art microscopes. We do not believe this to be a requirement in the field; therefore, we propose an adaptive instrument that is designed to allow nearly simultaneous collection of data from aberration-corrected transmission electron microscopy (TEM), probe-corrected scanning transmission electron microscopy, ultrafast TEM, and dynamic TEM with a flexible in-situ testing chamber, where the entire instrument can be modified as future technologies are developed. The value would be to obtain a holistic understanding of the underlying physics and chemistry of the process-structure–property relationships in materials exposed to controlled extreme environments. Such a tool would permit the ability to explore, in-situ, the active reaction mechanisms in a controlled manner emulating those of real-world applications with nanometer and nanosecond resolution. If such a powerful tool is developed, it has the potential to revolutionize our materials understanding of nanoscale mechanisms and transients. Graphical Abstract

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Direct observation of two-dimensional growth at SiO2/Si(111) interface

Cited by 18 publications

References 40 publications

On the Origins of Sudden Adhesion Loss at a Critical Relative Humidity: Examination of Bulk and Interfacial Contributions

On the Origins of Sudden Adhesion Loss at a Critical Relative Humidity: Examination of Bulk and Interfacial Contributions

First stages of silicon oxidation with the activation relaxation technique

Possibility of an integrated transmission electron microscope: enabling complex in-situ experiments

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