Direct observations of ferromagnetic and antiferromagnetic domains in Pt/Co/Cr&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;/Pt perpendicular exchange biased film

Shiratsuchi, Yu; Kotani, Yoshinori; Yoshida, Saori; Yoshikawa, Yasunori; Toyoki, Kentaro; Kobane, Atsushi; Nakatani, Ryoichi; Nakamura, Tetsuya

doi:10.3934/matersci.2015.4.484

Cited by 21 publications

(20 citation statements)

References 33 publications

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“…In this paper, we review the previous reports on ME-controlled exchange bias in all-thin-lm systems with Cr 2 O 3 layers, focusing mainly on our own achievements [13][14][15][16][17][18] . We also discuss the characteristics of the exchange bias achieved using Cr 2 O 3 thin lms because it has been hypothesized that exchange bias can be induced by using this material, and exchange bias itself is of signi cant interest in the eld of nano-magnetism.…”

Section: Overviewmentioning

confidence: 99%

“…These characteristics also agree with the theoretical prediction that the boundary magnetization is roughness-insensitive and in an equilibrium state 48) . The boundary magnetization and J K are not coupled; however, the boundary magnetization direction is coupled with the exchange bias polarity 15,18,19) . Figure 8 shows the spatial distributions of the XMCD intensities measured at the Co L 3 and Cr L 3 edges, which correspond to the FM and AFM domains, respectively, at 265 K after cooling the sample in zero magnetic eld to maintain the demagnetized state 18) .…”

Section: Perpendicular Exchange Bias and Boundary Magnetization On Crmentioning

confidence: 99%

“…The boundary magnetization and J K are not coupled; however, the boundary magnetization direction is coupled with the exchange bias polarity 15,18,19) . Figure 8 shows the spatial distributions of the XMCD intensities measured at the Co L 3 and Cr L 3 edges, which correspond to the FM and AFM domains, respectively, at 265 K after cooling the sample in zero magnetic eld to maintain the demagnetized state 18) . It can be seen that the FM and AFM domain patterns are spatially similar, indicating that the FM and AFM layers are exchange-coupled on a domain-by-domain basis.…”

Section: Perpendicular Exchange Bias and Boundary Magnetization On Crmentioning

confidence: 99%

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Perpendicular Exchange Bias and Magneto-Electric Control Using Cr2O3(0001) Thin Film

Shiratsuchi

Nakatani

2016

Mater. Trans.

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Antiferromagnets themselves do not generate either stray elds or spontaneous magnetization. However, if an antiferromagnet is coupled with a ferromagnet, unique and useful characteristics appear. Exchange bias is one such characteristic that is utilized in spintronic devices like spin-valve lms. To date, exchange bias has been used to induce static effects in devices; however, the exchange bias has not been switchable in these devices. Recently, switchable exchange bias has been developed using Cr 2 O 3 , which exhibits a magnetoelectric effect in an antiferromagnetic layer. The promising features of this effect are (1) the strength of the exchange bias is high and its direction is perpendicular to the lm, and (2) the switching is triggered by an electric eld. In this overview, we will summarize our recent results on the unique temperature dependence of high, perpendicular exchange bias and magnetoelectric switching of the induced perpendicular exchange bias.

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Section: Overviewmentioning

confidence: 99%

Section: Perpendicular Exchange Bias and Boundary Magnetization On Crmentioning

confidence: 99%

Section: Perpendicular Exchange Bias and Boundary Magnetization On Crmentioning

confidence: 99%

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Perpendicular Exchange Bias and Magneto-Electric Control Using Cr2O3(0001) Thin Film

Shiratsuchi

Nakatani

2016

Mater. Trans.

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“…Thus far, electrical manipulation of antiferromagnetic spin in Cr 2 O 3 /FM exchange bias systems has been extensively investigated, for future storage/memory/logic applications . This research has developed detection techniques which access the 180° difference in the antiferromagnetic spin . However, an isothermal, practical 180° control of antiferromagnetic spin in Cr 2 O 3 is still uneasy .…”

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confidence: 99%

Manipulation of Antiferromagnetic Spin Using Tunable Parasitic Magnetization in Magnetoelectric Antiferromagnet

Nozaki

Al‐Mahdawi

Shiokawa

et al. 2018

Physica Rapid Research Ltrs

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Antiferromagnets and ferrimagnets with a low net magnetic moment are key components for future spintronic devices because they enable high-integration and high-speed (on the order of THz) operations. Cr 2 O 3 is one of the few antiferromagnets that can achieve 180 manipulation of its spin by electrical means. In this study, the authors developed a new functional material, Cr 2 O 3 , with tunable parasitic magnetization. The authors demonstrate both magnitude and direction tunability of parasitic magnetization in Cr 2 O 3 thin films by doping. A sublattice magnetization reduction and displacement-induced nonequivalent Cr moments by site-selective substitution of nonmagnetic elements are inferred to be the origin of the parasitic magnetization. By utilizing the tunable parasitic magnetization, the authors demonstrate the manipulation of antiferromagnetic single domain. In addition, the authors confirm the low-electric-field switching ability of the antiferromagnetic spin in a doped Cr 2 O 3 /Co exchange coupling system. Such tunable parasitic magnetization enables easy manipulation and detection of antiferromagnetic spin and provides a platform for further understanding of antiferromagnets and research opportunities in innovative spintronics device applications.For a decade, ferromagnetic materials have played a prominent role in the development of spintronics. Ferromagnet (FM)based spintronics have resulted in unique high-performance devices, such as magnetoresistive random-access memory (MRAM). [1] However, specific problems, such as magnetic interferences, are a considerable barrier to further integration of these devices, restricting their future development. One way to overcome such problems is to utilize antiferromagnets (AFMs) or ferrimagnets with low net magnetic moments instead of FMs. As stated by N eel, [2] the high potential of AFMs has been recognized for a long time; AFMs do not generate stray fields, are stable in the presence of an external magnetic field, and have THz precession frequency, which enable the realization of high-integration and ultra-high-speed operation devices. Although the difficulty in conventional manipulation and detection of antiferromagnetic spin restricts its spintronics applications, these processes have increasingly become more feasible due to recent progress. [3][4][5] In particular, 90 control (uniaxial anisotropy control) of antiferromagnetic spin become more feasible. 90 manipulations of the antiferromagnetic spin using an electric current were demonstrated for FeRh through current-induced Joule heating, [6,7] and CuMnAs through spin-orbit torque. [8,9] The corresponding detection techniques, such as anisotropic magnetoresistance (AMR), [8,10,11] tunnel anisotropic magnetoresistance (TAMR), [12] and spin Hall magnetoresistance (SMR) of AFM, [13] which can detect 90 difference in antiferromagnetic spin has also been developed. In contrast, 180 control (unidirectional anisotropy control) of antiferromagnetic spins has been rarely demonstrated, while it enable higher perfo...

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“…Consequently, two AFM domains become selectable. Since the exchange bias of the film is determined by the AFM domain state 33,34) and is controllable by the ME effect. Till date, two types of ME-induced switching protocols have been proposed: MEFC and isothermal processes.…”

Section: Magnetoelectric Control Of Afm Cr2o3 Domain Statementioning

confidence: 99%

Magnetoelectric Control of Antiferromagnetic Domain of Cr2O3 Thin Film Toward Spintronic Application

2018

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Cr2O3 is a magnetoelectric antiferromagnet, and its antiferromagnetic domain state is controllable by the simultaneous application of magnetic and electric fields. In the 2000s, that is, more than 50 years since the discovery of the magnetoelectirc effect in Cr2O3, efforts were initiated apply this effect to engineering applications. In this article, we review the recent progress of the magnetoelectric control of the antiferromagnetic domain state and the related phenomena of Cr2O3, in particular, in an all-thin film system, an essential step to the application.

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Direct observations of ferromagnetic and antiferromagnetic domains in Pt/Co/Cr<sub>2</sub>O<sub>3</sub>/Pt perpendicular exchange biased film

Cited by 21 publications

References 33 publications

Perpendicular Exchange Bias and Magneto-Electric Control Using Cr<sub>2</sub>O<sub>3</sub>(0001) Thin Film

Perpendicular Exchange Bias and Magneto-Electric Control Using Cr<sub>2</sub>O<sub>3</sub>(0001) Thin Film

Manipulation of Antiferromagnetic Spin Using Tunable Parasitic Magnetization in Magnetoelectric Antiferromagnet

Magnetoelectric Control of Antiferromagnetic Domain of Cr<sub>2</sub>O<sub>3</sub> Thin Film Toward Spintronic Application

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