Direct observations of the vacancy and its annealing in germanium

Slotte, Jonatan; Kilpeläinen, Simo; Tuomisto, Filip; Räisänen, J.; Larsen, A. Nylandsted

doi:10.1103/physrevb.83.235212

Cited by 30 publications

(45 citation statements)

References 32 publications

(45 reference statements)

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“…For the positron lifetime in the Ga vacancy, we use s 2 ¼ 285 ps (weighted average from our experiments). We obtain [V Ga ] % 4 Â 10 16 cm À3 in n-type GaSb and [V Ga ] % 3 Â 10 16 cm À3 in p-type GaSb. The concentrations of the negative ion type defects can also be estimated from the positron lifetime data.…”

Section: B Defect Concentrationsmentioning

confidence: 94%

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Native point defects in GaSb

Kujala

Segercrantz

Tuomisto

et al. 2014

Journal of Applied Physics

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Influence of substrate doping and point defects on Al and Ga interdiffusion in AlSb/GaSb superlattice structures J. Appl. Phys. 102, 023511 (2007) We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type and nominally undoped p-type GaSb single crystals. The results show that the dominant vacancy defect trapping positrons in bulk GaSb is the gallium monovacancy. The temperature dependence of the average positron lifetime in both p-and n-type GaSb indicates that negative ion type defects with no associated open volume compete with the Ga vacancies. Based on comparison with theoretical predictions, these negative ions are identified as Ga antisites. The concentrations of these negatively charged defects exceed the Ga vacancy concentrations nearly by an order of magnitude. We conclude that the Ga antisite is the native defect responsible for p-type conductivity in GaSb single crystals. V C 2014 AIP Publishing LLC. [http://dx

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Section: B Defect Concentrationsmentioning

confidence: 94%

“…The identification of mono-and di-vacancy defects in Ge provides a good example in narrow band gap semiconductors. 16,17 Furthermore, positron methods are well supported by theory and the annihilation characteristics can be calculated from first principles.…”

Section: Introductionmentioning

confidence: 99%

Native point defects in GaSb

Kujala

Segercrantz

Tuomisto

et al. 2014

Journal of Applied Physics

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“…This depth is sufficient to avoid end of range effects, as the mean implantation depth of positrons is 33 μm in GaSb. This experimental procedure has been shown to be efficient in producing monovacancy defects, without evidence of larger clusters, in Si and Ge [25,26].…”

Section: Methodsmentioning

confidence: 99%

Instability of the Sb vacancy in GaSb

et al. 2017

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We demonstrate that the instability of the Sb vacancy in GaSb leads to a further increase in the acceptor-type defect concentration in proton irradiated undoped, p-type GaSb. Using positron annihilation spectroscopy in situ with 10 MeV proton irradiation at 35 K, we find that the irradiation produces both native vacancy defects in GaSb. However, the Sb vacancy is unstable above temperatures of 150 K and undergoes a transition resulting in a Ga vacancy and a Ga antisite. The activation energy of this transition is determined to be 0.6 eV ± 0.1 eV. Our results are in line with the established amphoteric defect model and prove that the instability of the Sb vacancy in GaSb has a profound role on the native defect concentration in GaSb.

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“…Monovacancies and divacancies have been identified (Corbel, Moser, and Stucky, 1985;Polity and Rudolf, 1999;Kuitunen et al, 2008;Slotte et al, 2008Slotte et al, , 2011 and their stability at and below room temperature investigated. Vacancies have also been found to pair with donors in Ge with positron annihilation (Arutyunov and Emtsev, 2007), while thorough investigations are still to be performed.…”

Section: Elemental Semiconductors Si Ge and Cmentioning

confidence: 99%

Defect identification in semiconductors with positron annihilation: Experiment and theory

2013

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Positron annihilation spectroscopy is particularly suitable for studying vacancy-type defects in semiconductors. Combining state-of-the-art experimental and theoretical methods allows for detailed identification of the defects and their chemical surroundings. Also charge states and defect levels in the band gap are accessible. In this review the main experimental and theoretical analysis techniques are described. The usage of these methods is illustrated through examples in technologically important elemental and compound semiconductors. Future challenges include the analysis of noncrystalline materials and of transient defect-related phenomena.

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Direct observations of the vacancy and its annealing in germanium

Cited by 30 publications

References 32 publications

Native point defects in GaSb

Native point defects in GaSb

Instability of the Sb vacancy in GaSb

Defect identification in semiconductors with positron annihilation: Experiment and theory

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