Direct Probe of the Seebeck Coefficient in a Kondo-Correlated Single-Quantum-Dot Transistor

Dutta, Bivas; Majidi, Danial; Corral, Alvaro Garcia; Erdman, Paolo Andrea; Florens, Serge; Costi, T. A.; Courtois, Hervé; Winkelmann, Clemens

doi:10.1021/acs.nanolett.8b04398

Cited by 61 publications

(55 citation statements)

References 52 publications

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“…Our theory also allows to explain the results shown in figure 4(a) of a recent experimental paper [29], albeit with a notable exception. These authors have found 'striking' sign changes of the Seebeck coefficients, in addition to the standard sign change at the particle-hole symmetric point.…”

Section: Linear and Nonlinear Thermopower And The Role Of Asymmetrysupporting

confidence: 57%

“…These sign changes depend on the spin configuration of the quantum dot and are observed with increasing temperature. In the experiment [29], S in fact changes sign at three values of the gate voltage, with one of them at the particle-hole symmetric point. Two other gate voltages at which sign changes appear are related to consecutive energy levels crossing the chemical potential.…”

Section: Linear and Nonlinear Thermopower And The Role Of Asymmetrymentioning

confidence: 87%

“…We emphasise that the typical asymmetry of the Kondo peak outside the particle-hole symmetry point is well reproduced by the present approach. The experimental data in figure 4(a) in [29], on the other hand, seem to show only positive (or negative), i.e. finite values of S around those special points at the lowest temperatures, with an apparent maximum (minimum) at the gate voltage where the theoretical Seebeck coefficient has a dip (peak).…”

Section: Linear and Nonlinear Thermopower And The Role Of Asymmetrymentioning

confidence: 91%

“…Furthermore, it has been proposed [14,23] that nonlinear working conditions can favourably affect the performance of heat engines. Recent studies in this direction include [24][25][26][27][28][29] and have been reviewed recently [30].…”

Section: Introductionmentioning

confidence: 99%

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Two- and three-terminal far-from-equilibrium thermoelectric nano-devices in the Kondo regime

Eckern

Wysokiński

2020

New J. Phys.

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This paper analyses the thermoelectric power of two-and three-terminal quantum dot devices under large thermal ΔT and voltage V biases, and their performance as thermoelectric heat engines. The focus is on the interaction between electrons, far-from-equilibrium conditions, and strongly nonlinear transport, which all are important factors affecting the usefulness of the devices. To properly characterise the thermoelectric properties under such conditions, two different Seebeck coefficients are introduced, generalizing the linear response expression. In agreement with previous work, we find that the efficiency of the three-terminal thermoelectric heat engine, as measured by the delivered power, is optimal far from equilibrium. Moreover, strong Coulomb interactions between electrons on the quantum dot are found to diminish the efficiency at maximum power, and the maximal value of the delivered power, both in the Kondo regime and beyond.

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Section: Linear and Nonlinear Thermopower And The Role Of Asymmetrysupporting

confidence: 57%

Section: Linear and Nonlinear Thermopower And The Role Of Asymmetrymentioning

confidence: 87%

Section: Linear and Nonlinear Thermopower And The Role Of Asymmetrymentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

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Two- and three-terminal far-from-equilibrium thermoelectric nano-devices in the Kondo regime

Eckern

Wysokiński

2020

New J. Phys.

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“…Recently, the Kondo effect has attracted attention in the context of the thermoelectric response of gatetunable semiconductor and molecular quantum dots, both experimentally [24][25][26] and theoretically [27][28][29][30][31][32][33] . Understanding the thermoelectric properties of such systems is important for using nanoscale thermoelectric elements to improve the energy efficiency of microelectronic devices [34][35][36][37] .…”

Section: Introductionmentioning

confidence: 99%

Magnetic field dependence of the thermopower of Kondo-correlated quantum dots: Comparison with experiment

Costi

2019

Phys. Rev. B

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Signatures of the Kondo effect in the electrical conductance of strongly correlated quantum dots are well understood both experimentally and theoretically, while those in the thermopower have been the subject of recent interest, both theoretically and experimentally. Here, we extend theoretical work [T. A. Costi, Phys. Rev. B 100, 161106(R) (2019)] on the field-dependent thermopower of such systems to the mixed valence and empty orbital regimes, and carry out calculations in order to address a recent experiment on the field dependent thermoelectric response of Kondo-correlated quantum dots [A. Svilans et al., Phys. Rev. Lett. 121, 206801 (2018)]. In addition to the sign changes in the thermopower at temperatures T 1 (B) and T 2 (B) (present also for B = 0) in the Kondo regime, an additional sign change was found [T. A. Costi, Phys. Rev. B 100, 161106(R) (2019)] at a temperature T 0 (B) < T 1 (B) < T 2 (B) for fields exceeding a gate-voltage dependent value B 0 , where B 0 is comparable to, but larger, than the field B c at which the Kondo resonance splits. We describe the evolution of the Kondo-induced sign changes in the thermopower at temperatures T 0 (B), T 1 (B) and T 2 (B) with magnetic field and gate voltage from the Kondo regime to the mixed valence and empty orbital regimes and show that these temperatures merge to the single temperature T 0 (B) upon entry into the mixed valence regime. By carrying out detailed numerical renormalization group calculations for the above quantities, using appropriate experimental parameters, we address a recent experiment which measures the field-dependent thermoelectric response of InAs quantum dots exhibiting the Kondo effect [A. Svilans et al., Phys. Rev. Lett. 121, 206801 (2018)]. This allows us to understand the overall trends in the measured field-and temperature-dependent thermoelectric response as a function of gate voltage. In addition, we determine which signatures of the Kondo effect (sign changes at T 0 (B), T 1 (B) and T 2 (B)) have been observed in this experiment, and find that while the Kondoinduced signature at T 1 (B) is indeed measured in the data, the signature at T 0 (B) can only be observed by carrying out further measurements at a lower temperature. In addition, the less interesting (high-temperature) signature at T 2 (B) Γ, where Γ is the electron tunneling rate onto the dot, is found to lie above the highest temperature in the experiment, and was therefore not accessed. Our calculations provide a useful framework for interpreting future experiments on direct measurements of the thermopower of Kondo-correlated quantum dots in the presence of finite magnetic fields, e.g., by extending zero-field measurements of the thermopower [B. Dutta et al., Nano Lett. 19, 506 (2019)] to finite magnetic fields. arXiv:1910.08785v1 [cond-mat.str-el]

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Electrical and Thermal Bias‐Driven Negative Magnetoresistance Effect in an Interacting Quantum Dot

Bo,

Tang,

et al. 2023

Physica Status Solidi (b)

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Spin‐dependent electron transport is theoretically studied for a system with an interacting quantum dot sandwiched between a pair of ferromagnetic electrodes. By separately applying an electrical bias or a temperature gradient across the junction, a spin‐polarized current can be obtained and controlled by tuning the gate voltage. Interestingly, regardless of whether the electron transport is driven by the bias voltage or temperature difference, the current in the device always exhibits negative magnetoresistance under the control of the gate voltage. Such magnetoresistance anomalies in the current profile originate from the spin‐selective tunneling channels in quantum dots, which have been proven experimentally feasible. This device scheme is compatible with current technologies and has potential applications in spintronics or spin caloritronics.This article is protected by copyright. All rights reserved.

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Direct Probe of the Seebeck Coefficient in a Kondo-Correlated Single-Quantum-Dot Transistor

Cited by 61 publications

References 52 publications

Two- and three-terminal far-from-equilibrium thermoelectric nano-devices in the Kondo regime

Two- and three-terminal far-from-equilibrium thermoelectric nano-devices in the Kondo regime

Magnetic field dependence of the thermopower of Kondo-correlated quantum dots: Comparison with experiment

Electrical and Thermal Bias‐Driven Negative Magnetoresistance Effect in an Interacting Quantum Dot

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