The surface modification of various
materials by grafting functional
molecules has attracted much attention from fundamental research to
practical applications because of its ability to impart various physical
and chemical properties to the surfaces. One promising approach is
the use of polymer brushes synthesized by atom transfer radical polymerization
(ATRP) from surface-tethered initiators (SIs). In this study, for
the purpose of controlling the grafting amounts/densities of polymer
brushes, we developed a facile method to precisely regulate SI concentrations
of SI layers (SILs) by serial dilution based on a sol–gel method.
By simply mixing organosilanes terminated with and without an initiator
group ((p-chloromethyl) phenyltrimethoxysilane (CMPTMS)
and phenyltrimethoxysilane (PTMS), respectively) with tetraethoxysilane
(TEOS), SI concentrations of SILs could be arbitrarily tuned precisely
by varying dilution factors of (CMPTMS + PTMS)/CMPTMS (DFs, 1–107). The resulting SILs prepared at different DFs were highly
smooth and transparent. X-ray photoelectron spectroscopy (XPS) also
confirmed that the SIs were homogeneously distributed at the topmost
surface of the SILs and their concentrations were proven to be accurately
and precisely controlled from high to extremely low, comparable to
theoretical values. Subsequent SI-ATRP in air (“paint-on”
SI-ATRP) of two different types of monomers (hydrophobic/nonionic
(2,3,4,5,6-pentafluorostyrene) and hydrophilic/ionic (sodium 4-styrenesulfonate))
demonstrated that polymer brushes with different grafting amounts/densities
were successfully grafted only from SILs with DFs of 1–104 (theoretical SI concentrations: 3.9 × 10–4 ∼ 3.5 units/nm2), while at DFs of 105 and above (theoretical SI concentrations: <3.9 × 10–5 units/nm2), no sign of polymer brush growth
was confirmed by thickness, XPS, and water contact angle data. Therefore,
we are the first to gather evidence that the approximate threshold
of SI concentration required for “paint-on” SI-ATRP
might be on the order of 10–4 ∼ 10–5 units/nm2.