Direct recognition of non-radiative recombination centers in semi-insulating LEC InP:Fe using double excitation photoluminescence

Time-resolved photoluminescence study of stabilised iron–porous silicon nanocomposites

“…8 presents a schematic energy diagram of PS/Fe. It is not the first one where the iron introduces levels in the gap; the same result has been reported by Dǒgan et al [19] when they have incorporated the same metal (iron) in InP at 300 K.…”

Electrical performance in iron-passivated porous silicon film

“…Dogan et al [27] have studied the effect of iron incorporated in InP sample and they have reported that iron creates two shallow acceptor levels situated at 650 and 590 meV from the conduction band. Recently, we have investigated the two elaborated samples by time resolved photoluminescence (TRPL) [28].…”

Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals

“…The radiative recombination spectrum of InP crystals consists of two bands peaked at about 1.14 and 1.41 eV (Fig. 1) that are attributed to V P Fe In or Si P Fe In [6] and band-to-band or shallow donor recombination [7], respectively. In our case, the edge origin of the latter band is more probable because of well fitting by the Varshni's approach.…”

“…According to [5,7,12], we should believe that the centers of fast (non-radiative) recombination are related to isolated V Ga and V As , background Fe impurity atoms and dislocations, for GaAs, InP and GaP, respectively. The interaction of WMF with indium phosphide was studied earlier [13], but in that case both the material microstructure and regime of treatment were different.…”