Direct surface charging and alkali-metal doping for tuning the interlayer magnetic order in planar nanostructures

Abstract

The continuous reduction of magnetic units to ultra small length scales inspires efforts to look for a suitable means of controlling magnetic states. In this study we show two surface charge alteration techniques for tuning the interlayer exchange coupling (IEC) of ferromagnetic layers separated by paramagnetic spacers. Our ab − initio study reveals that already a modest amount of extra charge can switch the mutual alignment of the magnetization from anti-ferromagnetic to ferromagnetic or vice verse. We also propose adsorption of alkali metals as an alternative way of varying the electronic and chemical properties of magnetic surfaces. Clear evidence is found that the interlayer magnetic order can be reversed by adsorbing alkali metals on the magnetic layer. Moreover, alkali metal overlayers strongly enhance the perpendicular magnetic anisotropy in FePt thin films. These findings combined with atomistic spin model calculations suggest that electronic or ionic way of surface charging can have a crucial role for magnetic hardening and spin state control.

Charge injection driven switching between ferromagnetism and antiferromagnetism in transitional metal-doped MoS2 materials

“…Such charge redistribution can even be spin-dependent, and more sensitive to the modulation of magnetic order than other methods. Thus, charge injection is an excellent way to control magnetism characteristics-for instance, manipulating the spin polarization [26] in topological insulators, tuning magnetic anisotropy [33] and interlayer magnetic order [34] in metallic multilayers and ferromagnet/MoS 2 heterojunction [35]. Nevertheless, as far as we know, switching between the antiferro-and the ferro-magnetic ground states by injecting charge has not been reported in MoS In this work, we systematically investigated the spin-polarized electronic and magnetic characteristics of transition metal (Fe, Mn) doped MoS 2 monolayers and MoS 2 /WS 2 heterojunctions.…”