Direct synthesis and crystallization of GaSb

Hársy, M.; Görög, T.; Lendvay, E.; Koltai, F.

doi:10.1016/0022-0248(81)90070-1

Cited by 29 publications

(11 citation statements)

References 15 publications

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“…Vertical Bridgman growth of GaSb has been reported by relatively few workers. 14,[61][62][63][64][65][66][67][68] Usually crystals are grown in quartz ampoules sealed at 10 Ϫ6 Torr. In earlier works, the ampoule lowering rate employed were in the range of 0.3-1.8 mm/h.…”

Section: Bridgman Techniquementioning

confidence: 99%

The physics and technology of gallium antimonide: An emerging optoelectronic material

Dutta

Bhat

Kumar

1997

Journal of Applied Physics

672

396

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Recent advances in nonsilica fiber technology have prompted the development of suitable materials for devices operating beyond 1.55 m. The III-V ternaries and quaternaries ͑AlGaIn͒͑AsSb͒ lattice matched to GaSb seem to be the obvious choice and have turned out to be promising candidates for high speed electronic and long wavelength photonic devices. Consequently, there has been tremendous upthrust in research activities of GaSb-based systems. As a matter of fact, this compound has proved to be an interesting material for both basic and applied research. At present, GaSb technology is in its infancy and considerable research has to be carried out before it can be employed for large scale device fabrication. This article presents an up to date comprehensive account of research carried out hitherto. It explores in detail the material aspects of GaSb starting from crystal growth in bulk and epitaxial form, post growth material processing to device feasibility. An overview of the lattice, electronic, transport, optical and device related properties is presented. Some of the current areas of research and development have been critically reviewed and their significance for both understanding the basic physics as well as for device applications are addressed. These include the role of defects and impurities on the structural, optical and electrical properties of the material, various techniques employed for surface and bulk defect passivation and their effect on the device characteristics, development of novel device structures, etc. Several avenues where further work is required in order to upgrade this III-V compound for optoelectronic devices are listed. It is concluded that the present day knowledge in this material system is sufficient to understand the basic properties and what should be more vigorously pursued is their implementation for device fabrication.

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Section: Bridgman Techniquementioning

confidence: 99%

The physics and technology of gallium antimonide: An emerging optoelectronic material

Dutta

Bhat

Kumar

1997

Journal of Applied Physics

672

396

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“…Hall data were measured in the Van der Pauw configuration between 300 and 77 K on 18 samples of undoped p-type bulk grown GaSb obtained from three different sources [4,5]. The magnetic field was ∼ 0.45 T. The room temperature hole concentration of the samples studied was in the range from 6 × 10 16 cm −3 to 1 × 10 18 cm −3 , the corresponding Hall mobility was between 420 cm 2 /(V s) and 660 cm 2 /(V s) at 300 K and between 400 cm 2 /(V s) and 2300 cm 2 /(V s) at 77 K. Representative data for hole concentration p = 1/eR H in a function of the reciprocal temperature are shown in Fig.…”

Section: Measurements and Resultsmentioning

confidence: 99%

Hole Scattering in GaSb: Scattering on Space Charge Regions Versus Dipole Scattering

Pődör

2005

Acta Phys. Pol. A

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Hole concentration and mobility were investigated by Hall measurements in nominally undoped p-type GaSb in the temperature range from 77 to 300 K. The dependence of the thermal ionization energy of native acceptors on the acceptor centre concentration and on the compensation degree was determined. The temperature dependence of the hole mobility was analyzed using a heuristic semi-empirical model as well as using a phenomenological two-hole band model. Space charge scattering and/or dipole scattering described with a mobility contribution with a ∼ T −1/2 like temperature dependence dominated the hole mobility in the investigated temperature range.

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“…doped GaSb sample The average grain size of the ingot is nearly 2.6 cm. Both Roy and Basu (Roy & Basu, 1988) and Harsy et.al (Hársy, Görög, Lendvay, & Koltai, 1981) have reported that the grain size strongly depends upon the ampoule diameter. The decrease in grain size with lower ampoule diameters was explained as due to the wall effect, whereas for large ampoule diameter non uniformity of heat conduction from the crystal to the melt interface results in decrease in grain size.…”

Section: Figure 3 the Photograph Of Polished Wafer Of Grown Nimentioning

confidence: 99%

Experimental and Simulation Analysis of Thermal Vertical Directional Solidification Grown Ni Doped Bulk GASB

Kamilla*,

Ali

2019

IJITEE

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Due to high hole mobility, p-GaSb is an attractive III-V semiconducting material for high performance p-channel metal-oxide semiconductor field effect transistor (p-MOSFET). For that growth of undoped and Ni doped GaSb bulk crystal by thermal vertical directional solidification has been reported in this paper. Both structural and electrical characterization was carried out for both the samples. X-ray diffraction (XRD) analysis confirms that the compound grown is polycrystalline in nature which has been supported by scanning electron microscope (SEM) image. The carrier charge density and mobility were measured by Hall Effect measurement in the temperature range 78K and 300K. From the sign of Hall co-efficient the grown material was confirmed p-type. The Current-Voltage (I-V) characteristic was studied for the sample i.e. experimentally grown and also simulated using TCAD at 78K and 300K. The temperature dependence of the hole mobility were also investigated by TCAD tool using the models Auger recombination, Shockley-Read-Hall (SRH) and Band-gap narrowing (BGN). Comparison of experimental and simulated temperature dependencies of mobility shows good agreement, while their difference at some points suggests the contribution of compensating impurities.

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Direct synthesis and crystallization of GaSb

Cited by 29 publications

References 15 publications

The physics and technology of gallium antimonide: An emerging optoelectronic material

The physics and technology of gallium antimonide: An emerging optoelectronic material

Hole Scattering in GaSb: Scattering on Space Charge Regions Versus Dipole Scattering

Experimental and Simulation Analysis of Thermal Vertical Directional Solidification Grown Ni Doped Bulk GASB

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